ATE259681T1 - Verfahren und gerät zur behandlung eines werkstückes, wie ein halbleiterwafer - Google Patents

Verfahren und gerät zur behandlung eines werkstückes, wie ein halbleiterwafer

Info

Publication number
ATE259681T1
ATE259681T1 AT99918658T AT99918658T ATE259681T1 AT E259681 T1 ATE259681 T1 AT E259681T1 AT 99918658 T AT99918658 T AT 99918658T AT 99918658 T AT99918658 T AT 99918658T AT E259681 T1 ATE259681 T1 AT E259681T1
Authority
AT
Austria
Prior art keywords
chemical
stream
workpiece surface
concerns
liquid
Prior art date
Application number
AT99918658T
Other languages
English (en)
Inventor
Eric J Bergman
P Hess Mignon
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27370024&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE259681(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Semitool Inc filed Critical Semitool Inc
Application granted granted Critical
Publication of ATE259681T1 publication Critical patent/ATE259681T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2230/00—Other cleaning aspects applicable to all B08B range
    • B08B2230/01—Cleaning with steam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT99918658T 1998-04-16 1999-04-16 Verfahren und gerät zur behandlung eines werkstückes, wie ein halbleiterwafer ATE259681T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US6131898A 1998-04-16 1998-04-16
US9906798P 1998-09-03 1998-09-03
US12530999P 1999-03-19 1999-03-19
PCT/US1999/008516 WO1999052654A1 (en) 1998-04-16 1999-04-16 Process and apparatus for treating a workpiece such as a semiconductor wafer

Publications (1)

Publication Number Publication Date
ATE259681T1 true ATE259681T1 (de) 2004-03-15

Family

ID=27370024

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99918658T ATE259681T1 (de) 1998-04-16 1999-04-16 Verfahren und gerät zur behandlung eines werkstückes, wie ein halbleiterwafer

Country Status (8)

Country Link
EP (1) EP1100630B1 (de)
JP (1) JP3515521B2 (de)
KR (1) KR100572295B1 (de)
CN (1) CN1126609C (de)
AT (1) ATE259681T1 (de)
DE (2) DE1100630T1 (de)
TW (1) TW405178B (de)
WO (1) WO1999052654A1 (de)

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US6701941B1 (en) 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
US7378355B2 (en) 1997-05-09 2008-05-27 Semitool, Inc. System and methods for polishing a wafer
US7404863B2 (en) 1997-05-09 2008-07-29 Semitool, Inc. Methods of thinning a silicon wafer using HF and ozone
US7416611B2 (en) 1997-05-09 2008-08-26 Semitool, Inc. Process and apparatus for treating a workpiece with gases
US20020157686A1 (en) * 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US6869487B1 (en) 1997-05-09 2005-03-22 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US7264680B2 (en) 1997-05-09 2007-09-04 Semitool, Inc. Process and apparatus for treating a workpiece using ozone
US5971368A (en) 1997-10-29 1999-10-26 Fsi International, Inc. System to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in the liquid until utilized
US6235641B1 (en) 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
US6406551B1 (en) * 1999-05-14 2002-06-18 Fsi International, Inc. Method for treating a substrate with heat sensitive agents
US6790783B1 (en) * 1999-05-27 2004-09-14 Micron Technology, Inc. Semiconductor fabrication apparatus
US6982006B1 (en) 1999-10-19 2006-01-03 Boyers David G Method and apparatus for treating a substrate with an ozone-solvent solution
US6686297B1 (en) 2000-08-17 2004-02-03 Georg Gogg Method of manufacturing a semiconductor device and apparatus to be used therefore
US20020179112A1 (en) 2000-10-05 2002-12-05 Winters Lenardus Cornelus Robertus Method of cleaning electronic device
DE10061288A1 (de) * 2000-12-08 2002-07-11 Steag Micro Tech Gmbh Vorrichtung und Verfahren zum Behandeln von Substraten
JP4076365B2 (ja) * 2002-04-09 2008-04-16 シャープ株式会社 半導体洗浄装置
CN1326638C (zh) * 2002-07-19 2007-07-18 上海华虹（集团）有限公司 一种去除硅化物形成过程中多余金属的方法
RU2249882C1 (ru) * 2003-07-08 2005-04-10 ФГУП ГНЦ РФ Научно-исследовательский физико-химический институт им. Л.Я. Карпова Способ очистки изделий, преимущественно полупроводниковых пластин
KR100526575B1 (ko) * 2003-12-11 2005-11-04 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
US7350315B2 (en) * 2003-12-22 2008-04-01 Lam Research Corporation Edge wheel dry manifold
US7556697B2 (en) * 2004-06-14 2009-07-07 Fsi International, Inc. System and method for carrying out liquid and subsequent drying treatments on one or more wafers
CN101044602A (zh) * 2004-09-17 2007-09-26 Fsi国际公司 使用臭氧处理类晶片物体
KR20080023264A (ko) * 2005-06-28 2008-03-12 아사히 테크 가부시끼가이샤 표면 개질된 부재, 표면 처리 방법 및 표면 처리 장치
KR20090130197A (ko) * 2005-11-23 2009-12-18 에프 에스 아이 인터내셔날,인코포레이티드 기판으로부터의 물질 제거 공정
DE102006003990A1 (de) * 2006-01-23 2007-08-02 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zum Aufbereiten bzw. Bearbeiten von Siliziummaterial
KR100880510B1 (ko) * 2006-09-26 2009-01-28 주식회사 포스코 표면세정장치
JP4536711B2 (ja) * 2006-12-25 2010-09-01 東京エレクトロン株式会社 基板処理装置
JP2007266636A (ja) * 2007-07-09 2007-10-11 Tokyo Electron Ltd 基板処理装置
US8796160B2 (en) * 2008-03-13 2014-08-05 Alliance For Sustainable Energy, Llc Optical cavity furnace for semiconductor wafer processing
CN102000676A (zh) * 2009-08-31 2011-04-06 日立电线株式会社 金属元件的表面处理方法及清洁喷嘴
US8709165B2 (en) 2010-12-03 2014-04-29 Lam Research Ag Method and apparatus for surface treatment using inorganic acid and ozone
CN102902169A (zh) * 2011-07-29 2013-01-30 中芯国际集成电路制造(上海)有限公司 去除光刻胶层的方法
CN102799083A (zh) * 2012-08-29 2012-11-28 上海宏力半导体制造有限公司 光刻胶去除系统以及光刻设备
US8871108B2 (en) 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
CN103264022B (zh) * 2013-05-15 2015-04-08 京东方科技集团股份有限公司 基板清洗装置、系统及方法
FR3006209B1 (fr) * 2013-05-31 2016-05-06 Michel Bourdat Dispositif et procede de nettoyage d'objets en forme de plaque
US10464107B2 (en) 2013-10-24 2019-11-05 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
CN105336577A (zh) * 2014-08-14 2016-02-17 无锡华瑛微电子技术有限公司 半导体基片表面钝化层的形成方法
CN105336645B (zh) * 2014-08-14 2021-04-30 无锡华瑛微电子技术有限公司 利用含臭氧的流体处理半导体晶片表面的装置及方法
KR101776017B1 (ko) 2015-10-27 2017-09-07 세메스 주식회사 용존 오존 제거 유닛 및 이를 포함하는 기판 처리 장치, 용존 오존 제거 방법, 기판 세정 방법
KR102549285B1 (ko) * 2015-11-14 2023-06-28 도쿄엘렉트론가부시키가이샤 묽은 tmah을 사용하여 마이크로전자 기판을 처리하는 방법
CN107138474B (zh) * 2017-07-19 2019-05-07 丽水学院 一种模具生产用自动清洗应力处理装置
US11448966B2 (en) * 2017-08-03 2022-09-20 Huaying Research Co., Ltd Photoresist-removing liquid and photoresist-removing method
US10002771B1 (en) * 2017-10-10 2018-06-19 Applied Materials, Inc. Methods for chemical mechanical polishing (CMP) processing with ozone
JP6560373B2 (ja) * 2018-01-15 2019-08-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
WO2020210243A1 (en) * 2019-04-08 2020-10-15 Mks Instruments, Inc. Systems and methods for generating a dissolved ammonia solution with reduced dissolved carrier gas and oxygen content
CN112909131A (zh) * 2021-03-15 2021-06-04 宁夏隆基乐叶科技有限公司 硅片的处理系统及处理方法、太阳能电池及其制作方法

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DE3818714A1 (de) * 1988-06-01 1989-12-14 Wacker Chemitronic Verfahren zur nasschemischen oberflaechenbehandlung von halbleiterscheiben
ES2103705T3 (es) * 1988-07-08 1997-10-01 Rhone Poulenc Chimie Limpieza y secado de conjuntos electronicos.
US5261966A (en) * 1991-01-28 1993-11-16 Kabushiki Kaisha Toshiba Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns
JPH04302145A (ja) * 1991-03-29 1992-10-26 Hitachi Ltd 洗浄方法
US5120370A (en) * 1991-04-01 1992-06-09 Shinichi Mori Cleaning process
JP3261683B2 (ja) * 1991-05-31 2002-03-04 忠弘 大見 半導体の洗浄方法及び洗浄装置
JPH05152203A (ja) * 1991-11-29 1993-06-18 Chlorine Eng Corp Ltd 基板処理方法および処理装置
KR940012061A (ko) * 1992-11-27 1994-06-22 가나이 쯔또무 유기물제거방법 및 그 방법을 이용하기 위한 유기물제거장치
US5647386A (en) * 1994-10-04 1997-07-15 Entropic Systems, Inc. Automatic precision cleaning apparatus with continuous on-line monitoring and feedback
JPH0969509A (ja) * 1995-09-01 1997-03-11 Matsushita Electron Corp 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法
US5858107A (en) * 1998-01-07 1999-01-12 Raytheon Company Liquid carbon dioxide cleaning using jet edge sonic whistles at low temperature

Also Published As

Publication number Publication date
EP1100630B1 (de) 2004-02-18
DE69914917T2 (de) 2005-01-05
DE69914917D1 (de) 2004-03-25
DE1100630T1 (de) 2001-09-06
KR100572295B1 (ko) 2006-04-24
EP1100630A1 (de) 2001-05-23
TW405178B (en) 2000-09-11
JP3515521B2 (ja) 2004-04-05
CN1126609C (zh) 2003-11-05
WO1999052654A1 (en) 1999-10-21
CN1297385A (zh) 2001-05-30
KR20010034784A (ko) 2001-04-25
JP2002511644A (ja) 2002-04-16
EP1100630A4 (de) 2001-07-04

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