ATE268511T1 - Lichtwellenleiter und herstellungsverfahren - Google Patents

Lichtwellenleiter und herstellungsverfahren

Info

Publication number
ATE268511T1
ATE268511T1 AT00964578T AT00964578T ATE268511T1 AT E268511 T1 ATE268511 T1 AT E268511T1 AT 00964578 T AT00964578 T AT 00964578T AT 00964578 T AT00964578 T AT 00964578T AT E268511 T1 ATE268511 T1 AT E268511T1
Authority
AT
Austria
Prior art keywords
optical path
locations
refractive index
top layer
altering
Prior art date
Application number
AT00964578T
Other languages
English (en)
Inventor
James Christopher O'gorman
Paul Mcevoy
David Mcdonald
Frederick Paul Logue
Pascal Michel Landais
Original Assignee
Trinity College Dublin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trinity College Dublin filed Critical Trinity College Dublin
Application granted granted Critical
Publication of ATE268511T1 publication Critical patent/ATE268511T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Couplings Of Light Guides (AREA)
AT00964578T 1999-09-23 2000-09-25 Lichtwellenleiter und herstellungsverfahren ATE268511T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IE990793 1999-09-23
PCT/IE2000/000110 WO2001022543A1 (en) 1999-09-23 2000-09-25 An optical waveguide and a method for providing an optical waveguide

Publications (1)

Publication Number Publication Date
ATE268511T1 true ATE268511T1 (de) 2004-06-15

Family

ID=11042129

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00964578T ATE268511T1 (de) 1999-09-23 2000-09-25 Lichtwellenleiter und herstellungsverfahren

Country Status (7)

Country Link
US (1) US6978057B1 (de)
EP (1) EP1214763B1 (de)
AT (1) ATE268511T1 (de)
AU (1) AU7550000A (de)
DE (1) DE60011277T2 (de)
IE (1) IES20000772A2 (de)
WO (1) WO2001022543A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7138621B2 (en) * 2002-05-08 2006-11-21 Virginia Tech Intellectual Properties, Inc. Optical fiber sensors based on pressure-induced temporal periodic variations in refractive index
IES20030516A2 (en) * 2003-07-11 2004-10-06 Eblana Photonics Ltd Semiconductor laser and method of manufacture
WO2006008724A1 (en) * 2004-07-16 2006-01-26 University College Cork - National University Of Ireland, Cork Method for designing a semiconductor laser with intracavity reflecting features, semiconductor laser and method of fabrication thereof
CN100477420C (zh) * 2004-07-16 2009-04-08 爱尔兰国家大学科克学院 具有腔内反射特征的半导体激光器的设计方法、半导体激光器及其制造方法
WO2006008269A1 (en) * 2004-07-23 2006-01-26 Eblana Photonics Ltd. Single mode laser
WO2006024674A1 (en) * 2004-09-03 2006-03-09 Eblana Photonics Limited A semiconductor light emitting device
TWI262639B (en) * 2005-06-16 2006-09-21 Ind Tech Res Inst Semiconductor laser device
IES20050574A2 (en) * 2005-08-31 2007-02-21 Eblana Photonics Ltd Semiconductor laser and method of manufacture
IES20050587A2 (en) * 2005-09-08 2007-02-21 Eblana Photonics Ltd Multi-stripe laser diode designs which exhibit a high degree of manafacturability
WO2008035320A1 (en) * 2006-09-20 2008-03-27 The Provost, Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin Vernier tuned coupled cavity ld having a ridge with voids for langitudinal mode suppression
GB2465754B (en) * 2008-11-26 2011-02-09 Univ Dublin City A semiconductor optical amplifier with a reduced noise figure
JP2011253977A (ja) * 2010-06-03 2011-12-15 Mitsubishi Electric Corp Ｄｂｒレーザ
WO2013055396A1 (en) * 2011-10-14 2013-04-18 Kotura, Inc. Reduction of mode hopping in a laser cavity
CN103199435B (zh) * 2013-03-25 2015-06-10 中国科学院半导体研究所 超低发散角倾斜光束的单纵模人工微结构激光器
CN103259188B (zh) * 2013-05-02 2015-06-24 中国科学院半导体研究所 低发散角单纵模边发射光子晶体激光器
WO2021168208A1 (en) * 2020-02-19 2021-08-26 Profusa, Inc. Optical filter device, system, and methods for improved optical rejection of high angle of incidence (aoi) light
DE102020133177A1 (de) * 2020-12-11 2022-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierender halbleiterchip und verfahren zur herstellung eines licht emittierenden halbleiterchips

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2161612B (en) * 1984-07-11 1988-02-03 Stc Plc Optical fibre transmission systems
JPS63305582A (ja) * 1987-06-05 1988-12-13 Matsushita Electric Ind Co Ltd 半導体レ−ザ
DE3914001A1 (de) * 1989-04-27 1990-10-31 Siemens Ag Halbleiterlaser mit eingepraegtem modenspektrum und verfahren zu dessen herstellung
DE3914000C2 (de) 1989-04-27 1994-04-14 Siemens Ag Verfahren zum Herstellen einer aufgerauhten Aluminiumfolie
US5177758A (en) * 1989-06-14 1993-01-05 Hitachi, Ltd. Semiconductor laser device with plural active layers and changing optical properties
US4976539A (en) * 1989-08-29 1990-12-11 David Sarnoff Research Center, Inc. Diode laser array
JP3263949B2 (ja) * 1991-02-25 2002-03-11 日本電気株式会社 光集積回路の製造方法
US5712715A (en) * 1992-12-23 1998-01-27 Lucent Technologies Inc. Optical transmission system with spatially-varying Bragg reflector
WO1997022023A1 (en) * 1995-12-12 1997-06-19 British Telecommunications Public Limited Company Formation of a refractive index grating
JP3929495B2 (ja) * 1996-01-18 2007-06-13 ブリティッシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニー 光感応性屈折率クラッドを備えた光導波路
US5717799A (en) * 1996-10-10 1998-02-10 Northern Telecom Limited Optical waveguide filters
US5870512A (en) * 1997-05-30 1999-02-09 Sdl, Inc. Optimized interferometrically modulated array source
US6330388B1 (en) * 1999-01-27 2001-12-11 Northstar Photonics, Inc. Method and apparatus for waveguide optics and devices

Also Published As

Publication number Publication date
EP1214763A1 (de) 2002-06-19
DE60011277D1 (de) 2004-07-08
IES20000772A2 (en) 2001-04-04
US6978057B1 (en) 2005-12-20
DE60011277T2 (de) 2005-06-23
AU7550000A (en) 2001-04-24
EP1214763B1 (de) 2004-06-02
WO2001022543A1 (en) 2001-03-29

Similar Documents

Publication Publication Date Title
ATE268511T1 (de) Lichtwellenleiter und herstellungsverfahren
CA2373564A1 (en) Optical wiring substrate, method of manufacturing optical wiring substrate and multilayer optical wiring
DK1007999T3 (da) Polariseringsasymmetrisk, aktiv, optisk bölgeleder, fremgangsmåde til dens fremstilling og dens anvendelser
EP1610426A4 (de) Optisches halbleiterbauelement und integrierte optische halbleiterschaltung
WO2005024469A3 (en) Interfacing multiple wavelength sources to thin optical waveguides utilizing evanescent coupling
KR920007281A (ko) 면 발광형 반도체 레이저
WO2003052883A2 (en) Retro-reflecting device in particular for tunable lasers
EP1104055A3 (de) Laserlichtquellengerät und OTDR-Gerät
DE60118974D1 (de) Räumlich modulierter reflektor für eine optoelektronische vorrichtung
ATE513344T1 (de) Vcsel mit spiegel aus einem photonischen kristall für wellenleitung mittels beugung
SE0200568D0 (sv) Fiber splicer
EP1489443A4 (de) Punktdefektstörungs-lichtresonator und lichtreflektor mit zweidimensionalem photonischem kristall
EP1691458A4 (de) Halbleiterlaser des typs mit externem resonator
CA2329089A1 (en) Fiber grating feedback stabilization of broad area laser diode
ATE488038T1 (de) Photonische integrierte bauelemente mit mehreren ebenen
CA2227937A1 (en) Wavelength-variable light source and otdr apparatus
Tang et al. Optimization of fiber-optic coupling and alignment tolerance for coupling between a laser diode and a wedged single-mode fiber
US20100246627A1 (en) Optical semiconductor device
JP2006518548A5 (de)
KR950012951A (ko) 반도체 레이저 장치
EP1043817A3 (de) Lichtemittierendes Modul
WO2001015287A3 (en) Semiconductor laser
TW200608659A (en) Semiconductor laser device and semiconductor laser element array
ATE430393T1 (de) Optoelektronische einrichtungen mit gefaltetem resonator
JP2015103715A (ja) 直接変調レーザ

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties