ATE268916T1 - Elektronenstrahlresist - Google Patents

Elektronenstrahlresist

Info

Publication number
ATE268916T1
ATE268916T1 AT99962315T AT99962315T ATE268916T1 AT E268916 T1 ATE268916 T1 AT E268916T1 AT 99962315 T AT99962315 T AT 99962315T AT 99962315 T AT99962315 T AT 99962315T AT E268916 T1 ATE268916 T1 AT E268916T1
Authority
AT
Austria
Prior art keywords
electron beam
resist layer
polar
electron
beam resist
Prior art date
Application number
AT99962315T
Other languages
English (en)
Inventor
Richard Edward Palmer
Alexander Phillip Robinson
Toshihiko Kanayama
Tetsuya Tada
Original Assignee
Nat Inst Of Advanced Ind Scien
Univ Birmingham
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Inst Of Advanced Ind Scien, Univ Birmingham filed Critical Nat Inst Of Advanced Ind Scien
Application granted granted Critical
Publication of ATE268916T1 publication Critical patent/ATE268916T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electron Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT99962315T 1998-12-17 1999-12-16 Elektronenstrahlresist ATE268916T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9827798.1A GB9827798D0 (en) 1998-12-17 1998-12-17 Electron beam resist
PCT/GB1999/004261 WO2000036469A1 (en) 1998-12-17 1999-12-16 Electron beam resist

Publications (1)

Publication Number Publication Date
ATE268916T1 true ATE268916T1 (de) 2004-06-15

Family

ID=10844414

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99962315T ATE268916T1 (de) 1998-12-17 1999-12-16 Elektronenstrahlresist

Country Status (7)

Country Link
US (1) US6503688B1 (de)
EP (1) EP1159649B1 (de)
JP (1) JP4476492B2 (de)
AT (1) ATE268916T1 (de)
DE (1) DE69917944T2 (de)
GB (1) GB9827798D0 (de)
WO (1) WO2000036469A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0420704D0 (en) * 2004-09-17 2004-10-20 Univ Birmingham Novel resist material and method for forming a patterned resist layer on a substrate
JP5275385B2 (ja) * 2011-02-22 2013-08-28 東京エレクトロン株式会社 有機現像処理方法及び有機現像処理装置
US9256126B2 (en) 2012-11-14 2016-02-09 Irresistible Materials Ltd Methanofullerenes
JP6157160B2 (ja) 2013-03-15 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 上層膜形成用組成物およびそれを用いたレジストパターン形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961102A (en) * 1974-09-13 1976-06-01 Cornwell Research Foundation, Inc. Scanning electron microscope fabrication of optical gratings
US5650261A (en) * 1989-10-27 1997-07-22 Rohm And Haas Company Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system
JP2599007B2 (ja) * 1989-11-13 1997-04-09 富士写真フイルム株式会社 ポジ型感光性組成物
JPH04113362A (ja) 1990-09-03 1992-04-14 Fuji Photo Film Co Ltd 光重合性組成物
DE4126496A1 (de) * 1991-08-10 1993-02-11 Basf Ag Organische photoleiter mit fluessigkristallinen eigenschaften
US5561026A (en) * 1992-06-30 1996-10-01 Nippon Oil Co., Ltd. Photosensitive materials comprising fullerene
DE4429597A1 (de) * 1994-08-20 1996-02-22 Basf Ag Verwendung von in der kolumnar helicalen Phase vorliegenden niedermolekularen oder polymeren organischen Verbindungen mit flüssigkristallinen Eigenschaften
US5932391A (en) * 1995-08-18 1999-08-03 Kabushiki Kaisha Toshiba Resist for alkali development
US5889141A (en) * 1997-04-28 1999-03-30 Hitachi Chemical Co., Ltd. Photoimageable compositions comprising polyquinoline polymer and diazo compound
JP3032833B2 (ja) * 1997-09-22 2000-04-17 ザ ユニバーシティ オブ バーミンガム 電子線レジスト

Also Published As

Publication number Publication date
DE69917944D1 (de) 2004-07-15
WO2000036469A1 (en) 2000-06-22
DE69917944T2 (de) 2005-06-23
EP1159649B1 (de) 2004-06-09
US6503688B1 (en) 2003-01-07
JP4476492B2 (ja) 2010-06-09
JP2002532759A (ja) 2002-10-02
GB9827798D0 (en) 1999-02-10
EP1159649A1 (de) 2001-12-05

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Legal Events

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