ATE272260T1 - F2-laser mit kontrolle des sichtbaren roten und ir-bereichs - Google Patents

F2-laser mit kontrolle des sichtbaren roten und ir-bereichs

Info

Publication number
ATE272260T1
ATE272260T1 AT00111119T AT00111119T ATE272260T1 AT E272260 T1 ATE272260 T1 AT E272260T1 AT 00111119 T AT00111119 T AT 00111119T AT 00111119 T AT00111119 T AT 00111119T AT E272260 T1 ATE272260 T1 AT E272260T1
Authority
AT
Austria
Prior art keywords
laser
range
preferred
line
modular
Prior art date
Application number
AT00111119T
Other languages
English (en)
Inventor
Eckehard D Onkels
Richard L Sandstrom
Thomas P Duffey
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cymer Inc filed Critical Cymer Inc
Application granted granted Critical
Publication of ATE272260T1 publication Critical patent/ATE272260T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10084—Frequency control by seeding
    • H01S3/10092—Coherent seed, e.g. injection locking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Laser Surgery Devices (AREA)
  • Glass Compositions (AREA)
AT00111119T 1999-11-12 2000-05-23 F2-laser mit kontrolle des sichtbaren roten und ir-bereichs ATE272260T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/438,249 US6330260B1 (en) 1999-03-19 1999-11-12 F2 laser with visible red and IR control

Publications (1)

Publication Number Publication Date
ATE272260T1 true ATE272260T1 (de) 2004-08-15

Family

ID=23739872

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00111119T ATE272260T1 (de) 1999-11-12 2000-05-23 F2-laser mit kontrolle des sichtbaren roten und ir-bereichs

Country Status (5)

Country Link
US (1) US6330260B1 (de)
EP (1) EP1100167B1 (de)
KR (1) KR100343032B1 (de)
AT (1) ATE272260T1 (de)
DE (1) DE60012453T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000205966A (ja) * 1999-01-20 2000-07-28 Komatsu Ltd 真空紫外レ―ザの波長測定装置
US6526084B1 (en) * 1999-03-17 2003-02-25 Lambda Physik Ag Detection of F2-concentration for power stabilization of an F2-157 NM excimer laser by using red laser emission of F-atom
US6834069B1 (en) * 1999-12-15 2004-12-21 Lambda Physik Ag Molecular fluorine laser with intracavity polarization enhancer
JP2003142758A (ja) * 2001-11-01 2003-05-16 Komatsu Ltd フッ素分子レーザ装置
US20050083984A1 (en) * 2003-10-17 2005-04-21 Igor Bragin Laser system sealing
JP5630758B2 (ja) * 2006-08-09 2014-11-26 株式会社小松製作所 エキシマレーザ装置
US8604709B2 (en) 2007-07-31 2013-12-10 Lsi Industries, Inc. Methods and systems for controlling electrical power to DC loads
US8903577B2 (en) 2009-10-30 2014-12-02 Lsi Industries, Inc. Traction system for electrically powered vehicles
US7598683B1 (en) 2007-07-31 2009-10-06 Lsi Industries, Inc. Control of light intensity using pulses of a fixed duration and frequency
DE102008013816B4 (de) * 2008-03-12 2010-09-16 Trumpf Werkzeugmaschinen Gmbh + Co. Kg Rückgewinnung von Energie aus einem Laserbearbeitungssystem
CN117444407A (zh) * 2023-10-24 2024-01-26 哈尔滨工大焊接科技有限公司 一种摆动点环激光-电弧复合焊接方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5315611A (en) 1986-09-25 1994-05-24 The United States Of America As Represented By The United States Department Of Energy High average power magnetic modulator for metal vapor lasers
US4959840A (en) 1988-01-15 1990-09-25 Cymer Laser Technologies Compact excimer laser including an electrode mounted in insulating relationship to wall of the laser
GB8927209D0 (en) * 1989-12-01 1990-01-31 British Aerospace Apparatus for controlling the composition of a laser gas or gas mixture
DE69200247T2 (de) * 1991-04-23 1994-11-24 Matsushita Electric Ind Co Ltd Entladungsgepumpter Gaslaser mit Baffle-Trennung für kontrollierten Gasfluss an Vorionisierern.
GB9207762D0 (en) * 1992-04-04 1992-05-27 British Oxygen Co Ltd Gas mixtures for excimer lasers
US5450436A (en) * 1992-11-20 1995-09-12 Kabushiki Kaisha Komatsu Seisakusho Laser gas replenishing apparatus and method in excimer laser system
US5313481A (en) 1993-09-29 1994-05-17 The United States Of America As Represented By The United States Department Of Energy Copper laser modulator driving assembly including a magnetic compression laser
US5448580A (en) 1994-07-05 1995-09-05 The United States Of America As Represented By The United States Department Of Energy Air and water cooled modulator
US5719896A (en) 1996-03-29 1998-02-17 Cymer Inc. Low cost corona pre-ionizer for a laser
US6128323A (en) * 1997-04-23 2000-10-03 Cymer, Inc. Reliable modular production quality narrow-band high REP rate excimer laser
IL138064A (en) * 1998-03-04 2004-06-20 Cymer Inc Laser excimer KrF reliable narrow-band, modular create
US6154470A (en) * 1999-02-10 2000-11-28 Lamba Physik Gmbh Molecular fluorine (F2) laser with narrow spectral linewidth

Also Published As

Publication number Publication date
DE60012453T2 (de) 2005-08-04
DE60012453D1 (de) 2004-09-02
EP1100167A2 (de) 2001-05-16
KR20010049332A (ko) 2001-06-15
KR100343032B1 (ko) 2002-07-02
US6330260B1 (en) 2001-12-11
EP1100167A3 (de) 2002-03-27
EP1100167B1 (de) 2004-07-28

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