ATE272905T1 - Abstimmbarer laser mit einer integrierten vorrichtung zur wellenlängenüberwachung und zugehöriges betriebsverfahren - Google Patents

Abstimmbarer laser mit einer integrierten vorrichtung zur wellenlängenüberwachung und zugehöriges betriebsverfahren

Info

Publication number
ATE272905T1
ATE272905T1 AT00912081T AT00912081T ATE272905T1 AT E272905 T1 ATE272905 T1 AT E272905T1 AT 00912081 T AT00912081 T AT 00912081T AT 00912081 T AT00912081 T AT 00912081T AT E272905 T1 ATE272905 T1 AT E272905T1
Authority
AT
Austria
Prior art keywords
wavelength
monitor
laser
filter
light
Prior art date
Application number
AT00912081T
Other languages
English (en)
Inventor
Larry Coldren
Thomas Gordon B Mason
Gregory Fish
Original Assignee
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California filed Critical Univ California
Application granted granted Critical
Publication of ATE272905T1 publication Critical patent/ATE272905T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
AT00912081T 1999-03-01 2000-02-29 Abstimmbarer laser mit einer integrierten vorrichtung zur wellenlängenüberwachung und zugehöriges betriebsverfahren ATE272905T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12219499P 1999-03-01 1999-03-01
PCT/US2000/005235 WO2000052789A2 (en) 1999-03-01 2000-02-29 A tunable laser source with an integrated wavelength monitor and method of operating same

Publications (1)

Publication Number Publication Date
ATE272905T1 true ATE272905T1 (de) 2004-08-15

Family

ID=22401247

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00912081T ATE272905T1 (de) 1999-03-01 2000-02-29 Abstimmbarer laser mit einer integrierten vorrichtung zur wellenlängenüberwachung und zugehöriges betriebsverfahren

Country Status (5)

Country Link
EP (1) EP1159774B1 (de)
AT (1) ATE272905T1 (de)
CA (1) CA2362311A1 (de)
DE (1) DE60012704T2 (de)
WO (1) WO2000052789A2 (de)

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US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US20030219917A1 (en) 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7286585B2 (en) 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7435660B2 (en) 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7257143B2 (en) 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7167495B2 (en) 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
WO2001024329A1 (en) * 1999-09-28 2001-04-05 The Regents Of The University Of California Integrated wavelength tunable single and two-stage all-optical wavelength converter
JP2001358362A (ja) * 2000-06-16 2001-12-26 Oki Electric Ind Co Ltd 光モニタ，光フィルタ，および光モジュール
US7116851B2 (en) 2001-10-09 2006-10-03 Infinera Corporation Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance
WO2003032021A2 (en) 2001-10-09 2003-04-17 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TxPICs
US7672546B2 (en) 2001-10-09 2010-03-02 Infinera Corporation Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips
US7680364B2 (en) 2001-10-09 2010-03-16 Infinera Corporation Wavelength locking and power control systems for multi-channel photonic integrated circuits (PICS)
EP1436869B1 (de) 2001-10-09 2016-06-01 Infinera Corporation Integrierte photonische transmissionsmodule
US7058246B2 (en) 2001-10-09 2006-06-06 Infinera Corporation Transmitter photonic integrated circuit (TxPIC) chip with enhanced power and yield without on-chip amplification
US6868100B2 (en) 2001-12-04 2005-03-15 Agility Communications, Inc. Methods for robust channel switching of widely-tunable sampled-grating distributed bragg reflector lasers
US7295586B2 (en) 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CA2581614A1 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
JP5075816B2 (ja) * 2005-06-30 2012-11-21 インフィネラ コーポレイション 多重−チャネル光集積回路（ｐｉｃｓ）のための波長ロックおよび出力の制御システム
EP4203208B1 (de) * 2021-12-22 2025-11-12 EFFECT Photonics B.V. Optoelektronisches system und verfahren

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Publication number Priority date Publication date Assignee Title
EP0001714B1 (de) * 1977-10-26 1984-03-21 The Post Office Steuerapparat für eine Halbleiter-Laservorrichtung
US5323409A (en) * 1991-12-05 1994-06-21 Honeywell Inc. Wavelength stabilization
US5299212A (en) * 1993-03-10 1994-03-29 At&T Bell Laboratories Article comprising a wavelength-stabilized semiconductor laser
JPH07307516A (ja) * 1994-05-13 1995-11-21 Kokusai Denshin Denwa Co Ltd <Kdd> 波長可変半導体レーザ装置
WO1997005679A1 (en) * 1995-07-27 1997-02-13 Jds Fitel Inc. Method and device for wavelength locking
US5825792A (en) * 1996-07-11 1998-10-20 Northern Telecom Limited Wavelength monitoring and control assembly for WDM optical transmission systems
JP3385898B2 (ja) * 1997-03-24 2003-03-10 安藤電気株式会社 可変波長半導体レーザ光源
US6289028B1 (en) * 1998-02-19 2001-09-11 Uniphase Telecommunications Products, Inc. Method and apparatus for monitoring and control of laser emission wavelength
JPH11251673A (ja) * 1998-02-27 1999-09-17 Nec Corp レーザ信号の波長制御回路

Also Published As

Publication number Publication date
CA2362311A1 (en) 2000-09-08
EP1159774A2 (de) 2001-12-05
WO2000052789A3 (en) 2001-01-11
DE60012704T2 (de) 2005-01-13
DE60012704D1 (de) 2004-09-09
EP1159774B1 (de) 2004-08-04
WO2000052789A2 (en) 2000-09-08

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