ATE274241T1 - Fotodetektor mit einem mosfet bestehend aus einem schwebenden gate - Google Patents

Fotodetektor mit einem mosfet bestehend aus einem schwebenden gate

Info

Publication number
ATE274241T1
ATE274241T1 AT96920861T AT96920861T ATE274241T1 AT E274241 T1 ATE274241 T1 AT E274241T1 AT 96920861 T AT96920861 T AT 96920861T AT 96920861 T AT96920861 T AT 96920861T AT E274241 T1 ATE274241 T1 AT E274241T1
Authority
AT
Austria
Prior art keywords
floating gate
pct
photoelectrons
date
photo detector
Prior art date
Application number
AT96920861T
Other languages
English (en)
Inventor
Timo Oikari
Jukka Kahilainen
Jukka Haaslahti
Original Assignee
Rados Technology Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rados Technology Oy filed Critical Rados Technology Oy
Application granted granted Critical
Publication of ATE274241T1 publication Critical patent/ATE274241T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Glass Compositions (AREA)
AT96920861T 1995-06-30 1996-06-28 Fotodetektor mit einem mosfet bestehend aus einem schwebenden gate ATE274241T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI953240A FI953240A0 (fi) 1995-06-30 1995-06-30 Ljusdetektor
PCT/FI1996/000380 WO1997002609A1 (en) 1995-06-30 1996-06-28 Photodetector involving a mosfet having a floating gate

Publications (1)

Publication Number Publication Date
ATE274241T1 true ATE274241T1 (de) 2004-09-15

Family

ID=8543704

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96920861T ATE274241T1 (de) 1995-06-30 1996-06-28 Fotodetektor mit einem mosfet bestehend aus einem schwebenden gate

Country Status (11)

Country Link
US (1) US6043508A (de)
EP (1) EP0842545B1 (de)
JP (1) JP3790548B2 (de)
CN (1) CN1112735C (de)
AT (1) ATE274241T1 (de)
AU (1) AU6227196A (de)
CA (1) CA2225226C (de)
DE (1) DE69633183T2 (de)
FI (1) FI953240A0 (de)
RU (1) RU2161348C2 (de)
WO (1) WO1997002609A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000088645A (ja) 1998-09-16 2000-03-31 Hamamatsu Photonics Kk 積分型光検出装置
JPWO2003087739A1 (ja) * 2002-04-17 2005-08-18 浜松ホトニクス株式会社 光検出センサ
KR100499956B1 (ko) * 2002-10-24 2005-07-05 전자부품연구원 양자채널이 형성된 모스펫을 이용한 포토디텍터 및 그제조방법
FR2911191B1 (fr) * 2007-01-09 2009-07-10 Microcomposants De Haute Secur Capteur de mesure d'une dose d'uv et procede de mesure d'une dose d'uv mettant en oeuvre ce capteur
CN101303239B (zh) * 2007-05-10 2010-05-26 北方工业大学 一种传感器及其调节方法
JP5116851B2 (ja) * 2008-09-02 2013-01-09 シャープ株式会社 表示装置
CN101807547B (zh) * 2009-02-18 2013-07-10 南京大学 光敏复合介质栅mosfet探测器
WO2011124481A2 (en) 2010-04-07 2011-10-13 International Business Machines Corporation Photo detector and integrated circuit
US9762233B2 (en) * 2011-08-16 2017-09-12 Erez Halahmi System for a contactless control of a field effect transistor
US8653618B2 (en) * 2011-09-02 2014-02-18 Hoon Kim Unit pixel of color image sensor and photo detector thereof
US9213112B2 (en) 2013-03-15 2015-12-15 Starfire Industries, Llc Neutron radiation sensor
CN104900745B (zh) * 2015-05-26 2017-10-27 北京工业大学 一种基于高电子迁移率晶体管的光谱探测器及其制备方法
CN110767519B (zh) * 2019-10-21 2022-03-04 中国电子科技集团公司第十二研究所 一种场发射电子源结构及其形成方法、电子源、微波管

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002420A1 (de) * 1977-12-01 1979-06-13 International Business Machines Corporation Lichtgesteuerte Feldeffekttransistor-Halbleitereinrichtung und daraus entstehende Speicheranordnung
DE3413829A1 (de) * 1984-04-10 1985-10-17 Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin Mos-dosimeter
RU2035806C1 (ru) * 1991-11-06 1995-05-20 Физико-технический институт им.А.Ф.Иоффе РАН Датчик
US5471051A (en) * 1993-06-02 1995-11-28 Hamamatsu Photonics K.K. Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same
FI934784A0 (fi) * 1993-10-28 1993-10-28 Rados Technology Oy Straolningsdetektor
US5804833A (en) * 1996-10-10 1998-09-08 Advanced Scientific Concepts, Inc. Advanced semiconductor emitter technology photocathodes

Also Published As

Publication number Publication date
FI953240A0 (fi) 1995-06-30
US6043508A (en) 2000-03-28
DE69633183D1 (de) 2004-09-23
CA2225226C (en) 2003-01-21
DE69633183T2 (de) 2005-08-18
CA2225226A1 (en) 1997-01-23
RU2161348C2 (ru) 2000-12-27
EP0842545B1 (de) 2004-08-18
CN1112735C (zh) 2003-06-25
WO1997002609A1 (en) 1997-01-23
JP3790548B2 (ja) 2006-06-28
EP0842545A1 (de) 1998-05-20
JPH11509366A (ja) 1999-08-17
CN1189922A (zh) 1998-08-05
AU6227196A (en) 1997-02-05

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Legal Events

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