ATE277440T1 - Optische wellenlängenverschiebung - Google Patents

Optische wellenlängenverschiebung

Info

Publication number
ATE277440T1
ATE277440T1 AT01953221T AT01953221T ATE277440T1 AT E277440 T1 ATE277440 T1 AT E277440T1 AT 01953221 T AT01953221 T AT 01953221T AT 01953221 T AT01953221 T AT 01953221T AT E277440 T1 ATE277440 T1 AT E277440T1
Authority
AT
Austria
Prior art keywords
sub
frequency
wavelength
optical wavelength
wavelength shift
Prior art date
Application number
AT01953221T
Other languages
English (en)
Inventor
Christopher Clement Phillips
Original Assignee
Imperial College
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial College filed Critical Imperial College
Application granted granted Critical
Publication of ATE277440T1 publication Critical patent/ATE277440T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5054—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Optical Communication System (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Glass Compositions (AREA)
AT01953221T 2000-08-07 2001-07-27 Optische wellenlängenverschiebung ATE277440T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0019376A GB2365620A (en) 2000-08-07 2000-08-07 Optical wavelength shifting by semiconductor intersubband laser
PCT/GB2001/003394 WO2002013344A1 (en) 2000-08-07 2001-07-27 Optical wavelength shifting

Publications (1)

Publication Number Publication Date
ATE277440T1 true ATE277440T1 (de) 2004-10-15

Family

ID=9897149

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01953221T ATE277440T1 (de) 2000-08-07 2001-07-27 Optische wellenlängenverschiebung

Country Status (8)

Country Link
US (1) US7081985B2 (de)
EP (1) EP1310024B1 (de)
AT (1) ATE277440T1 (de)
AU (1) AU2001275714A1 (de)
DE (1) DE60105825T2 (de)
ES (1) ES2227242T3 (de)
GB (1) GB2365620A (de)
WO (1) WO2002013344A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6788727B2 (en) 2002-06-13 2004-09-07 Intel Corporation Method and apparatus for tunable wavelength conversion using a bragg grating and a laser in a semiconductor substrate
FR2965642B1 (fr) 2010-09-30 2012-10-26 Centre Nat Rech Scient Convertisseur optique de longueur d'onde
US9020350B2 (en) 2011-06-24 2015-04-28 Techsys Insights Optical spectrum recovery
CN104170051B (zh) 2012-02-03 2017-05-31 拉皮斯坎系统股份有限公司 组合散射和透射的多视图成像系统
US10670740B2 (en) 2012-02-14 2020-06-02 American Science And Engineering, Inc. Spectral discrimination using wavelength-shifting fiber-coupled scintillation detectors
US10168445B2 (en) 2015-03-20 2019-01-01 Rapiscan Systems, Inc. Hand-held portable backscatter inspection system
CN112424644A (zh) * 2018-06-20 2021-02-26 美国科学及工程股份有限公司 波长偏移片耦合的闪烁检测器
US11340361B1 (en) 2020-11-23 2022-05-24 American Science And Engineering, Inc. Wireless transmission detector panel for an X-ray scanner
GB2624599A (en) 2021-10-01 2024-05-22 Rapiscan Holdings Inc Methods and systems for the concurrent generation of multiple substantially similar X-ray beams

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04360591A (ja) 1991-06-06 1992-12-14 Hamamatsu Photonics Kk 波長可変光源装置
FR2736168B1 (fr) * 1995-06-30 1997-07-25 Thomson Csf Convertisseur de frequence comprenant un guide semiconducteur a heterostructure
FR2740271B1 (fr) 1995-10-20 1997-11-07 Thomson Csf Laser a puits quantique
FR2784514B1 (fr) 1998-10-13 2001-04-27 Thomson Csf Procede de controle d'un laser semiconducteur unipolaire

Also Published As

Publication number Publication date
DE60105825D1 (de) 2004-10-28
GB0019376D0 (en) 2000-09-27
GB2365620A (en) 2002-02-20
EP1310024A1 (de) 2003-05-14
US7081985B2 (en) 2006-07-25
EP1310024B1 (de) 2004-09-22
ES2227242T3 (es) 2005-04-01
AU2001275714A1 (en) 2002-02-18
DE60105825T2 (de) 2005-10-06
WO2002013344A1 (en) 2002-02-14
US20050073740A1 (en) 2005-04-07

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Legal Events

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