ATE278250T1 - Vorrichtung und verfahren zur laser- oberflächenbehandlung - Google Patents

Vorrichtung und verfahren zur laser- oberflächenbehandlung

Info

Publication number
ATE278250T1
ATE278250T1 AT96924926T AT96924926T ATE278250T1 AT E278250 T1 ATE278250 T1 AT E278250T1 AT 96924926 T AT96924926 T AT 96924926T AT 96924926 T AT96924926 T AT 96924926T AT E278250 T1 ATE278250 T1 AT E278250T1
Authority
AT
Austria
Prior art keywords
pct
laser
treatment
laser beam
sec
Prior art date
Application number
AT96924926T
Other languages
English (en)
Inventor
Pierre Boher
Marc Stehle
Original Assignee
Production Et De Rech S Appliq
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Production Et De Rech S Appliq filed Critical Production Et De Rech S Appliq
Application granted granted Critical
Publication of ATE278250T1 publication Critical patent/ATE278250T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Removal Of Insulation Or Armoring From Wires Or Cables (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Laser Beam Processing (AREA)
AT96924926T 1995-08-11 1996-07-03 Vorrichtung und verfahren zur laser- oberflächenbehandlung ATE278250T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9509778A FR2737806B1 (fr) 1995-08-11 1995-08-11 Dispositif et procede de traitement de surface par laser
PCT/FR1996/001034 WO1997007539A1 (fr) 1995-08-11 1996-07-03 Dispositif et procede de traitement de surface par laser

Publications (1)

Publication Number Publication Date
ATE278250T1 true ATE278250T1 (de) 2004-10-15

Family

ID=9481898

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96924926T ATE278250T1 (de) 1995-08-11 1996-07-03 Vorrichtung und verfahren zur laser- oberflächenbehandlung

Country Status (9)

Country Link
US (1) US6073464A (de)
EP (1) EP0843889B1 (de)
JP (1) JP3996641B2 (de)
KR (1) KR100403792B1 (de)
AT (1) ATE278250T1 (de)
CA (1) CA2225422C (de)
DE (1) DE69633511T2 (de)
FR (1) FR2737806B1 (de)
WO (1) WO1997007539A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2737786B1 (fr) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap Dispositif optique pour homogeneiser un faisceau laser
FR2737814B1 (fr) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap Procede et dispositif de commande d'une source laser a plusieurs modules laser pour optimiser le traitement de surface par laser
TW444275B (en) * 1998-01-13 2001-07-01 Toshiba Corp Processing device, laser annealing device, laser annealing method, manufacturing device and substrate manufacturing device for panel display
KR100322135B1 (ko) * 1999-03-11 2002-02-04 윤종용 잔류 기계적 스트레스를 최대화하는 광섬유 및 이를 이용한 광섬유 격자 제작방법
JP3447654B2 (ja) * 2000-03-24 2003-09-16 Ｎｅｃエレクトロニクス株式会社 異方性薄膜評価法及び評価装置
US20030119060A1 (en) * 2001-08-10 2003-06-26 Desrosiers Peter J. Apparatuses and methods for creating and testing pre-formulations and systems for same
TW586173B (en) * 2002-11-29 2004-05-01 Au Optronics Corp Method of monitoring a laser crystallization process
TWI284443B (en) * 2003-01-07 2007-07-21 Au Optronics Corp Automatic control system and method of laser energy
WO2005036627A1 (en) * 2003-10-03 2005-04-21 Applied Materials, Inc. Absorber layer for dynamic surface annealing processing
US7109087B2 (en) * 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
JP2006040949A (ja) * 2004-07-22 2006-02-09 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化装置及びレーザー結晶化方法
JP2006088163A (ja) * 2004-09-21 2006-04-06 Fanuc Ltd レーザ装置
US7796260B1 (en) * 2006-04-25 2010-09-14 J.A. Woollam Co., Inc. System and method of controlling intensity of an electromagnetic beam
KR20100105606A (ko) * 2007-11-21 2010-09-29 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에피택셜하게 텍스쳐화된 후막의 제조를 위한 시스템 및 방법
EP2470485A4 (de) * 2009-08-27 2012-12-26 Mcalister Technologies Llc Keramikisolator sowie herstellungsverfahren und verwendungsverfahren dafür
US8994943B2 (en) * 2012-11-30 2015-03-31 Infineon Technologies Ag Selectivity by polarization
JP6348149B2 (ja) * 2016-07-08 2018-06-27 ファナック株式会社 ロボットを用いてレーザ加工を行うレーザ加工ロボットシステム
JP6464213B2 (ja) * 2017-02-09 2019-02-06 ファナック株式会社 レーザ加工ヘッドおよび撮影装置を備えるレーザ加工システム
FR3075377B1 (fr) * 2017-12-19 2020-10-16 Commissariat Energie Atomique Procede de caracterisation et de controle de l'homogeneite de pieces metalliques fabriquees par frittage laser
GB2571997B (en) 2018-03-16 2021-10-27 X Fab Texas Inc Use of wafer brightness to monitor laser anneal process and laser anneal tool

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168636A (ja) * 1983-03-15 1984-09-22 Toshiba Corp ド−ズ量評価方法
US4897154A (en) * 1986-07-03 1990-01-30 International Business Machines Corporation Post dry-etch cleaning method for restoring wafer properties
US4962065A (en) * 1989-02-13 1990-10-09 The University Of Arkansas Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices
JPH03295251A (ja) * 1990-04-12 1991-12-26 Sumitomo Electric Ind Ltd 半導体基板の表面状態検査方法
US5313044A (en) * 1992-04-28 1994-05-17 Duke University Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor
JPH06288835A (ja) * 1993-03-30 1994-10-18 Shimadzu Corp エリプソメータ
US5399229A (en) * 1993-05-13 1995-03-21 Texas Instruments Incorporated System and method for monitoring and evaluating semiconductor wafer fabrication
KR100306527B1 (ko) * 1994-06-15 2002-06-26 구사마 사부로 박막반도체장치의제조방법,박막반도체장치
FR2737814B1 (fr) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap Procede et dispositif de commande d'une source laser a plusieurs modules laser pour optimiser le traitement de surface par laser
FR2737779B1 (fr) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap Dispositif ellipsometre a haute resolution spatiale
FR2737786B1 (fr) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap Dispositif optique pour homogeneiser un faisceau laser
US5798837A (en) * 1997-07-11 1998-08-25 Therma-Wave, Inc. Thin film optical measurement system and method with calibrating ellipsometer
US5864393A (en) * 1997-07-30 1999-01-26 Brown University Research Foundation Optical method for the determination of stress in thin films

Also Published As

Publication number Publication date
CA2225422C (en) 2007-05-22
EP0843889B1 (de) 2004-09-29
DE69633511T2 (de) 2005-11-17
EP0843889A1 (de) 1998-05-27
DE69633511D1 (de) 2004-11-04
FR2737806B1 (fr) 1997-09-12
KR100403792B1 (ko) 2004-03-24
US6073464A (en) 2000-06-13
JP3996641B2 (ja) 2007-10-24
JPH11510960A (ja) 1999-09-21
FR2737806A1 (fr) 1997-02-14
KR19990036247A (ko) 1999-05-25
WO1997007539A1 (fr) 1997-02-27
CA2225422A1 (en) 1997-02-27

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