ATE282726T1 - Herstellung von verbindungen auf basis von cu-in- se phasengleichgewichten - Google Patents

Herstellung von verbindungen auf basis von cu-in- se phasengleichgewichten

Info

Publication number
ATE282726T1
ATE282726T1 AT01947428T AT01947428T ATE282726T1 AT E282726 T1 ATE282726 T1 AT E282726T1 AT 01947428 T AT01947428 T AT 01947428T AT 01947428 T AT01947428 T AT 01947428T AT E282726 T1 ATE282726 T1 AT E282726T1
Authority
AT
Austria
Prior art keywords
phase
inse
production
compounds based
phase equilibriums
Prior art date
Application number
AT01947428T
Other languages
English (en)
Inventor
Tilo Goedecke
Frank Ernst
Original Assignee
Max Planck Gesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft filed Critical Max Planck Gesellschaft
Application granted granted Critical
Publication of ATE282726T1 publication Critical patent/ATE282726T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
  • Conductive Materials (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Liquid Crystal Substances (AREA)
AT01947428T 2000-06-30 2001-06-29 Herstellung von verbindungen auf basis von cu-in- se phasengleichgewichten ATE282726T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00113935A EP1167587A1 (de) 2000-06-30 2000-06-30 Herstellung von Verbindungen auf Basis der Phasengleichgewichte des Systems Cu-In-Se
PCT/EP2001/007461 WO2002002851A1 (en) 2000-06-30 2001-06-29 Preparation of compounds based on phase equilibria of cu-in-se

Publications (1)

Publication Number Publication Date
ATE282726T1 true ATE282726T1 (de) 2004-12-15

Family

ID=8169124

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01947428T ATE282726T1 (de) 2000-06-30 2001-06-29 Herstellung von verbindungen auf basis von cu-in- se phasengleichgewichten

Country Status (6)

Country Link
US (1) US7172654B2 (de)
EP (2) EP1167587A1 (de)
JP (1) JP5079963B2 (de)
AT (1) ATE282726T1 (de)
DE (1) DE60107246T2 (de)
WO (1) WO2002002851A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2236065C1 (ru) * 2003-05-20 2004-09-10 Валерий Феликсович Гременок СПОСОБ ПОЛУЧЕНИЯ ПЛЕНОК ТВЕРДЫХ РАСТВОРОВ ZN2-2х CUх INх VI2
JP2006049768A (ja) * 2004-08-09 2006-02-16 Showa Shell Sekiyu Kk Ｃｉｓ系化合物半導体薄膜太陽電池及び該太陽電池の光吸収層の製造方法
JP4773543B2 (ja) * 2009-04-17 2011-09-14 昭和シェル石油株式会社 エッジスペースを備えた太陽電池モジュール
JP2014154762A (ja) * 2013-02-12 2014-08-25 Nitto Denko Corp Ｃｉｇｓ膜の製法およびそれを用いるｃｉｇｓ太陽電池の製法
CN106353245B (zh) * 2016-10-13 2019-08-30 国家电网公司 用作架空地线的钢绞线的股线腐蚀程度无损检测方法
US20180226533A1 (en) * 2017-02-08 2018-08-09 Amberwave Inc. Thin Film Solder Bond

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4652332A (en) * 1984-11-29 1987-03-24 The United States Of America As Represented By The United States Department Of Energy Method of synthesizing and growing copper-indium-diselenide (CuInSe2) crystals
JPH1088320A (ja) * 1996-09-10 1998-04-07 Matsushita Electric Ind Co Ltd 半導体薄膜の製造方法

Also Published As

Publication number Publication date
US7172654B2 (en) 2007-02-06
EP1294962A1 (de) 2003-03-26
JP2004501859A (ja) 2004-01-22
DE60107246T2 (de) 2005-12-15
WO2002002851A1 (en) 2002-01-10
DE60107246D1 (de) 2004-12-23
EP1167587A1 (de) 2002-01-02
EP1294962B1 (de) 2004-11-17
US20040025781A1 (en) 2004-02-12
JP5079963B2 (ja) 2012-11-21

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Legal Events

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