ATE283385T1 - Vorrichtungen für molekularstrahlepitaxie - Google Patents

Vorrichtungen für molekularstrahlepitaxie

Info

Publication number
ATE283385T1
ATE283385T1 AT02751239T AT02751239T ATE283385T1 AT E283385 T1 ATE283385 T1 AT E283385T1 AT 02751239 T AT02751239 T AT 02751239T AT 02751239 T AT02751239 T AT 02751239T AT E283385 T1 ATE283385 T1 AT E283385T1
Authority
AT
Austria
Prior art keywords
diaphragm
epitaxy
molecular beam
plate
under vacuum
Prior art date
Application number
AT02751239T
Other languages
English (en)
Inventor
Pierre Bouchaib
Franck Stemmelen
Original Assignee
Addon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Addon filed Critical Addon
Application granted granted Critical
Publication of ATE283385T1 publication Critical patent/ATE283385T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Disintegrating Or Milling (AREA)
AT02751239T 2001-05-29 2002-05-29 Vorrichtungen für molekularstrahlepitaxie ATE283385T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0106997A FR2825379B1 (fr) 2001-05-29 2001-05-29 Equipements d'epitaxie par jet moleculaire
PCT/FR2002/001806 WO2002097172A2 (fr) 2001-05-29 2002-05-29 Equipements d'epitaxie par jet moleculaire

Publications (1)

Publication Number Publication Date
ATE283385T1 true ATE283385T1 (de) 2004-12-15

Family

ID=8863726

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02751239T ATE283385T1 (de) 2001-05-29 2002-05-29 Vorrichtungen für molekularstrahlepitaxie

Country Status (9)

Country Link
US (1) US7021238B2 (de)
EP (1) EP1392894B1 (de)
JP (1) JP2004532528A (de)
AT (1) ATE283385T1 (de)
AU (1) AU2002344194A1 (de)
DE (1) DE60202064T2 (de)
ES (1) ES2233843T3 (de)
FR (1) FR2825379B1 (de)
WO (1) WO2002097172A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2825379B1 (fr) * 2001-05-29 2004-07-16 Addon Equipements d'epitaxie par jet moleculaire
EP1851355B1 (de) * 2005-02-22 2011-04-13 E-Science, Inc. Effusionszellventil
TWI422698B (zh) * 2010-09-17 2014-01-11 Princo Corp 真空蒸鍍用鍍材舟及真空蒸鍍系統

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4424104A (en) * 1983-05-12 1984-01-03 International Business Machines Corporation Single axis combined ion and vapor source
US4856457A (en) * 1987-02-20 1989-08-15 Hughes Aircraft Company Cluster source for nonvolatile species, having independent temperature control
GB8726639D0 (en) * 1987-11-13 1987-12-16 Vg Instr Groups Ltd Vacuum evaporation & deposition
US5188671A (en) * 1990-08-08 1993-02-23 Hughes Aircraft Company Multichannel plate assembly for gas source molecular beam epitaxy
JPH0831741A (ja) * 1994-07-12 1996-02-02 Sumitomo Electric Ind Ltd Ｋセル型蒸着源
US5616180A (en) * 1994-12-22 1997-04-01 Northrop Grumman Corporation Aparatus for varying the flux of a molecular beam
GB9515929D0 (en) * 1995-08-03 1995-10-04 Fisons Plc Sources used in molecular beam epitaxy
JPH09118590A (ja) * 1995-10-25 1997-05-06 Hitachi Cable Ltd 分子線エピタキシャル成長方法及びその装置
US5906857A (en) * 1997-05-13 1999-05-25 Ultratherm, Inc. Apparatus, system and method for controlling emission parameters attending vaporized in a HV environment
US6011904A (en) * 1997-06-10 2000-01-04 Board Of Regents, University Of Texas Molecular beam epitaxy effusion cell
US6342265B1 (en) * 1997-08-20 2002-01-29 Triumf Apparatus and method for in-situ thickness and stoichiometry measurement of thin films
FR2825379B1 (fr) * 2001-05-29 2004-07-16 Addon Equipements d'epitaxie par jet moleculaire

Also Published As

Publication number Publication date
WO2002097172A2 (fr) 2002-12-05
ES2233843T3 (es) 2005-06-16
FR2825379A1 (fr) 2002-12-06
AU2002344194A1 (en) 2002-12-09
JP2004532528A (ja) 2004-10-21
DE60202064T2 (de) 2005-12-01
US20040129216A1 (en) 2004-07-08
EP1392894A2 (de) 2004-03-03
WO2002097172A3 (fr) 2003-03-27
US7021238B2 (en) 2006-04-04
FR2825379B1 (fr) 2004-07-16
EP1392894B1 (de) 2004-11-24
DE60202064D1 (de) 2004-12-30

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Legal Events

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