ATE285482T1 - Einkristall aus wolframlegierung für penetrator und herstellungsverfahren dafür - Google Patents

Einkristall aus wolframlegierung für penetrator und herstellungsverfahren dafür

Info

Publication number
ATE285482T1
ATE285482T1 AT00947291T AT00947291T ATE285482T1 AT E285482 T1 ATE285482 T1 AT E285482T1 AT 00947291 T AT00947291 T AT 00947291T AT 00947291 T AT00947291 T AT 00947291T AT E285482 T1 ATE285482 T1 AT E285482T1
Authority
AT
Austria
Prior art keywords
penetrator
single crystal
tungsten alloy
production method
cvd
Prior art date
Application number
AT00947291T
Other languages
English (en)
Inventor
Lester L Begg
Original Assignee
Gen Atomics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Atomics filed Critical Gen Atomics
Application granted granted Critical
Publication of ATE285482T1 publication Critical patent/ATE285482T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F42—AMMUNITION; BLASTING
    • F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
    • F42B12/00—Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material
    • F42B12/02—Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect
    • F42B12/04—Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect of armour-piercing type
    • F42B12/06—Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect of armour-piercing type with hard or heavy core; Kinetic energy penetrators
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F42—AMMUNITION; BLASTING
    • F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
    • F42B12/00—Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material
    • F42B12/72—Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the material
    • F42B12/74—Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the material of the core or solid body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Accessories And Tools For Shearing Machines (AREA)
  • Preliminary Treatment Of Fibers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT00947291T 1999-07-13 2000-07-12 Einkristall aus wolframlegierung für penetrator und herstellungsverfahren dafür ATE285482T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14382799P 1999-07-13 1999-07-13
PCT/US2000/019031 WO2001004370A1 (en) 1999-07-13 2000-07-12 Single crystal tungsten alloy penetrator and method of making

Publications (1)

Publication Number Publication Date
ATE285482T1 true ATE285482T1 (de) 2005-01-15

Family

ID=22505839

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00947291T ATE285482T1 (de) 1999-07-13 2000-07-12 Einkristall aus wolframlegierung für penetrator und herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US20020059882A1 (de)
EP (1) EP1226285B1 (de)
AT (1) ATE285482T1 (de)
CA (1) CA2389593A1 (de)
DE (1) DE60016961D1 (de)
WO (1) WO2001004370A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITNO20020010A1 (it) * 2002-07-12 2004-01-12 Novara Technology Srl "metodo per la preparazione di aerogeli"
US7360488B2 (en) 2004-04-30 2008-04-22 Aerojet - General Corporation Single phase tungsten alloy
DE102005049748A1 (de) * 2005-10-18 2007-04-19 Rheinmetall Waffe Munition Gmbh Verfahren zur Herstellung eines Penetrators
US8359979B2 (en) * 2006-01-17 2013-01-29 B6 Sigma, Inc. Composite projectile
US8573128B2 (en) * 2006-06-19 2013-11-05 Materials & Electrochemical Research Corp. Multi component reactive metal penetrators, and their method of manufacture
US20110209922A1 (en) * 2009-06-05 2011-09-01 Varel International Casing end tool
RU2453624C1 (ru) * 2011-05-20 2012-06-20 Федеральное государственное унитарное предприятие "Научно-исследовательский институт Научно-производственное объединение "ЛУЧ" (ФГУП "НИИ НПО "ЛУЧ") Способ получения монокристаллов сплава вольфрам-тантал
US9772171B2 (en) * 2015-03-24 2017-09-26 Patrick C Henry, III Method of modifying ammunition classification
CN114657431B (zh) * 2022-02-18 2023-01-17 安泰天龙钨钼科技有限公司 一种含能钨合金材料及制备方法
CN118957379B (zh) * 2024-08-19 2025-02-14 江西国创院新材料有限公司 一种氢冶金用高温抗氢脆单相钨基合金及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4138512A (en) * 1977-10-17 1979-02-06 The United States Of America As Represented By The Secretary Of The Army Process for chemical vapor deposition of a homogeneous alloy of refractory metals
DE3705382A1 (de) * 1987-02-20 1988-09-01 Diehl Gmbh & Co Penetrator und verfahren zu seiner herstellung
US5440995A (en) * 1993-04-05 1995-08-15 The United States Of America As Represented By The Secretary Of The Army Tungsten penetrators

Also Published As

Publication number Publication date
EP1226285B1 (de) 2004-12-22
EP1226285A4 (de) 2002-12-04
DE60016961D1 (de) 2005-01-27
WO2001004370A1 (en) 2001-01-18
US20020059882A1 (en) 2002-05-23
EP1226285A1 (de) 2002-07-31
CA2389593A1 (en) 2001-01-18

Similar Documents

Publication Publication Date Title
ATE285482T1 (de) Einkristall aus wolframlegierung für penetrator und herstellungsverfahren dafür
Schintlmeister et al. Structure and strength effects in CVD titanium carbide and titanium nitride coatings
US5440995A (en) Tungsten penetrators
SE9602813D0 (sv) Cemented carbide body with improved high temperature and thermo-mechanical properties
KR930011674B1 (ko) 피복 초경합금 및 그 제조방법
JP2006513119A5 (de)
EP1057899A3 (de) Zusammensetzungen und einkristalline Gegenstände aus Hafnium und/oder Zirkonium modifizierten Nikel-Basis Superlegierungen
US4957548A (en) Cermet alloy
KR20040084781A (ko) 주철 기계가공용의 피복 절삭공구 인서트
DD279468A5 (de) Verfahren zur herstellung von selbsttragenden keramischen verbundstrukturen
IS6597A (is) Aðferð til framleiðslu á steinull, málmblöndum byggðum á kóbalti til framleiðslunnar og annarra nota
Murr et al. Comparison of beginning and ending microstructures in metal shaped charges as a means to explore mechanisms for plastic deformation at high rates
Polini et al. Nucleation and Growth of Diamond Films on Ni‐Cemented Tungsten Carbide: Effects of Substrate Pretreatments
US6027808A (en) Cemented carbide for a drill, and for a drill forming holes in printed circuit boards which is made of the cemented carbide
US8016056B2 (en) Asymmetric graded composites for improved drill bits
Chakk et al. Mechanism of diamond formation on substrates abraded with a mixture of diamond and metal powders
Pande et al. Use of floating zone melting technique for the growth of niobium bicrystals
JP5032052B2 (ja) バインダー相が富化された表面を備えた被覆超硬合金
Gibson et al. The preparation of single crystal LaB6 cathodes for electron microscopes
EP0603995A1 (de) Verfahren zur Herstellung von Diamant-Einkristallen
JPH01317112A (ja) 高強度多結晶ダイヤモンド及びその製造方法
Cahn Freedom and fashion in materials science and engineering
GARDNER Ductile fracture initiation in pure alpha-FE[Ph. D. Thesis]
Kim et al. Enhancement of Formation in Boron–Carbon–Nitrogen Nanotubes by Plasma Rotating Electrode Process
Yao et al. Microstructures and Mechanical Properties of(Fe, Co, Ni) sub 3 V Alloys

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties