ATE289082T1 - Resistzusammensetzung - Google Patents

Resistzusammensetzung

Info

Publication number
ATE289082T1
ATE289082T1 AT01938643T AT01938643T ATE289082T1 AT E289082 T1 ATE289082 T1 AT E289082T1 AT 01938643 T AT01938643 T AT 01938643T AT 01938643 T AT01938643 T AT 01938643T AT E289082 T1 ATE289082 T1 AT E289082T1
Authority
AT
Austria
Prior art keywords
monomer
acid
resist composition
monomer units
resistant composition
Prior art date
Application number
AT01938643T
Other languages
English (en)
Inventor
Isamu Kaneko
Shinji Okada
Yasuhide Kawaguchi
Yoko Takebe
Syun-Ichi Kodama
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of ATE289082T1 publication Critical patent/ATE289082T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L29/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical; Compositions of hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Compositions of derivatives of such polymers
    • C08L29/14—Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
AT01938643T 2000-06-13 2001-06-13 Resistzusammensetzung ATE289082T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000176603 2000-06-13
PCT/JP2001/005033 WO2001096963A1 (en) 2000-06-13 2001-06-13 Resist composition

Publications (1)

Publication Number Publication Date
ATE289082T1 true ATE289082T1 (de) 2005-02-15

Family

ID=18678313

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01938643T ATE289082T1 (de) 2000-06-13 2001-06-13 Resistzusammensetzung

Country Status (7)

Country Link
US (1) US6733952B2 (de)
EP (1) EP1298491B1 (de)
KR (1) KR20030076226A (de)
AT (1) ATE289082T1 (de)
AU (1) AU2001264271A1 (de)
DE (1) DE60108874T2 (de)
WO (1) WO2001096963A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833230B2 (en) * 2000-01-19 2004-12-21 Samsung Electronics Co., Ltd. Photosensitive polymers containing adamantylalkyl vinyl ether, and resist compositions including the same
KR20050058383A (ko) * 2002-08-21 2005-06-16 아사히 가라스 가부시키가이샤 함불소 화합물, 함불소 폴리머 및 그 제조 방법
JPWO2004042475A1 (ja) * 2002-11-07 2006-03-09 旭硝子株式会社 レジスト組成物
EP1559729A4 (de) * 2002-11-07 2007-12-05 Asahi Glass Co Ltd Fluorpolymer
JP4396525B2 (ja) * 2003-03-28 2010-01-13 旭硝子株式会社 含フッ素化合物および含フッ素重合体
EP1649322A4 (de) 2003-07-17 2007-09-19 Honeywell Int Inc Planarisierungsfilme für fortschrittliche mikroelektronsiche anwendungen und einrichtungen und herstellungsverfahren dafür
JP2005097531A (ja) * 2003-08-21 2005-04-14 Asahi Glass Co Ltd 含フッ素共重合体とその製造方法およびそれを含むレジスト組成物
FR2859110B1 (fr) 2003-09-03 2006-04-07 Salomon Sa Systeme de ski de fond avec surface laterale d'appui direct
EP1679297B1 (de) * 2003-10-31 2009-08-05 Asahi Glass Company, Limited Fluorverbindung, flourpolymer und verfahren zur herstellung davon
WO2005108446A1 (ja) * 2004-05-07 2005-11-17 Asahi Glass Company, Limited 含フッ素共重合体とその製造方法およびそれを含むレジスト組成物
JPWO2006011427A1 (ja) 2004-07-30 2008-05-01 旭硝子株式会社 含フッ素化合物、含フッ素ポリマー、レジスト組成物、およびレジスト保護膜組成物
US20060249332A1 (en) * 2005-05-06 2006-11-09 General Electric Company Oil supply and scavenge system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US211417A (en) * 1879-01-14 Improvement in apparatus for cooling air
JP3915870B2 (ja) * 1999-08-25 2007-05-16 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料及びパターン形成方法
JP3672780B2 (ja) * 1999-11-29 2005-07-20 セントラル硝子株式会社 ポジ型レジスト組成物およびパターン形成方法
US6951705B2 (en) * 2000-05-05 2005-10-04 E. I. Du Pont De Nemours And Company Polymers for photoresist compositions for microlithography

Also Published As

Publication number Publication date
AU2001264271A1 (en) 2001-12-24
WO2001096963A1 (en) 2001-12-20
KR20030076226A (ko) 2003-09-26
US20030130409A1 (en) 2003-07-10
EP1298491B1 (de) 2005-02-09
EP1298491A1 (de) 2003-04-02
US6733952B2 (en) 2004-05-11
EP1298491A4 (de) 2004-06-16
DE60108874D1 (de) 2005-03-17
DE60108874T2 (de) 2005-12-29

Similar Documents

Publication Publication Date Title
ATE289082T1 (de) Resistzusammensetzung
EP2267533B1 (de) Resistzusammensetzung
TWI628510B (zh) 積層體、有機半導體製造用套組及有機半導體製造用光阻組成物
KR101431297B1 (ko) 포지티브형 감방사선성 조성물 및 그것을 이용한 레지스트 패턴 형성 방법
TWI502277B (zh) 感光性樹脂組成物、硬化膜之形成方法、硬化膜、有機ｅｌ顯示裝置及液晶顯示裝置
TW200628977A (en) Photosensitive resin composition and photosensitive dry film by the use thereof
DE60315085D1 (de) Resistzusammensetzung
ATE555421T1 (de) Lichtempfindliche zusammensetzung und negativ arbeitende flachdruckplatte
ATE313571T1 (de) Fluorierte photopolymerzusammensetzung und wellenleitervorrichtung
JP2011221496A (ja) ポジ型感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
JP2012008223A (ja) ポジ型感光性樹脂組成物、硬化膜の形成方法、硬化膜、液晶表示装置、及び、有機ｅｌ表示装置
KR20120124397A (ko) 감광성 조성물, 격벽, 컬러 필터 및 유기 ｅｌ 소자
WO2011014011A3 (ko) 가교성 경화 물질을 포함하는 포토레지스트 조성물
US20070190458A1 (en) Resist composition and patterning process using the same
US5981142A (en) Photoresist copolymer
DE602005019585D1 (de) Herstellung von polymerstrukturen
KR20070008565A (ko) 후막 페이스트와 상용가능한 자외선 차단 보호층
JP2004524565A5 (de)
ATE480799T1 (de) Positiv arbeitende resistzusammensetzung
JPH03223862A (ja) レジスト材料
TW200502694A (en) Chemical amplification type positive photoresist composition and resist pattern forming method using the same
Fu et al. The kinetics of a negative‐tone acrylic photoresist for 193‐nm lithography
TW468210B (en) Manufacturing method for reverse tapered rampart
JPS54112627A (en) Resist composition
Ku et al. Expanding the process window and reducing the optical proximity effect by post-exposure delay

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties