ATE292106T1 - Sich selbst reduzierende kupfer (ii) reagenzien zur cvd von kupfermetall - Google Patents
Sich selbst reduzierende kupfer (ii) reagenzien zur cvd von kupfermetallInfo
- Publication number
- ATE292106T1 ATE292106T1 AT01937900T AT01937900T ATE292106T1 AT E292106 T1 ATE292106 T1 AT E292106T1 AT 01937900 T AT01937900 T AT 01937900T AT 01937900 T AT01937900 T AT 01937900T AT E292106 T1 ATE292106 T1 AT E292106T1
- Authority
- AT
- Austria
- Prior art keywords
- copper
- alkyl
- metal complexes
- cvd
- reagents
- Prior art date
Links
- 239000002184 metal Substances 0.000 title abstract 4
- 229910052751 metal Inorganic materials 0.000 title abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052802 copper Inorganic materials 0.000 title abstract 3
- 239000010949 copper Substances 0.000 title abstract 3
- 239000003153 chemical reaction reagent Substances 0.000 title 1
- 238000000151 deposition Methods 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 125000001153 fluoro group Chemical group F* 0.000 abstract 1
- 150000002431 hydrogen Chemical group 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C215/00—Compounds containing amino and hydroxy groups bound to the same carbon skeleton
- C07C215/02—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton
- C07C215/04—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being saturated
- C07C215/06—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being saturated and acyclic
- C07C215/08—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being saturated and acyclic with only one hydroxy group and one amino group bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C217/00—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton
- C07C217/02—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton
- C07C217/04—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated
- C07C217/06—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one etherified hydroxy group and one amino group bound to the carbon skeleton, which is not further substituted
- C07C217/08—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one etherified hydroxy group and one amino group bound to the carbon skeleton, which is not further substituted the oxygen atom of the etherified hydroxy group being further bound to an acyclic carbon atom
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/589,757 US6369256B1 (en) | 2000-06-09 | 2000-06-09 | Self-reducible copper(II) source reagents for chemical vapor deposition of copper metal |
| PCT/CA2001/000796 WO2001094291A1 (en) | 2000-06-09 | 2001-05-31 | Self-reducible copper(ii) source reagents for chemical vapor deposition of copper metal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE292106T1 true ATE292106T1 (de) | 2005-04-15 |
Family
ID=24359392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01937900T ATE292106T1 (de) | 2000-06-09 | 2001-05-31 | Sich selbst reduzierende kupfer (ii) reagenzien zur cvd von kupfermetall |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6369256B1 (de) |
| EP (1) | EP1296933B1 (de) |
| JP (1) | JP2003535839A (de) |
| AT (1) | ATE292106T1 (de) |
| AU (1) | AU2001263687A1 (de) |
| CA (1) | CA2419837A1 (de) |
| DE (1) | DE60109779D1 (de) |
| WO (1) | WO2001094291A1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6620956B2 (en) * | 2001-11-16 | 2003-09-16 | Applied Materials, Inc. | Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing |
| KR100704464B1 (ko) | 2003-02-26 | 2007-04-10 | 한국화학연구원 | 구리 아미노알콕사이드 화합물, 이의 합성 방법 및 이를이용한 구리 박막의 형성 방법 |
| DE10360046A1 (de) | 2003-12-18 | 2005-07-21 | Basf Ag | Kupfer(l)formiatkomplexe |
| WO2006033731A2 (en) * | 2004-08-16 | 2006-03-30 | E.I. Dupont De Nemours And Company | Atomic layer deposition of copper using surface-activating agents |
| US6982341B1 (en) * | 2005-03-30 | 2006-01-03 | Korea Research Institute Of Chemical Technology | Volatile copper aminoalkoxide complex and deposition of copper thin film using same |
| CN104470892B (zh) | 2012-11-13 | 2017-05-17 | 株式会社艾迪科 | 金属醇盐化合物、薄膜形成用原料、薄膜的制造方法和醇化合物 |
| CA2988797C (en) * | 2015-06-11 | 2023-08-01 | National Research Council Of Canada | Preparation of high conductivity copper films |
| TWI773839B (zh) | 2017-10-14 | 2022-08-11 | 美商應用材料股份有限公司 | 用於beol 互連的ald 銅與高溫pvd 銅沉積的集成 |
| EP4180417A4 (de) * | 2020-07-09 | 2024-07-24 | Adeka Corporation | Alkoxidverbindung, dünnschichtbildendes material und verfahren zur herstellung einer dünnschicht |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3356527A (en) | 1964-04-23 | 1967-12-05 | Ross W Moshier | Vapor-plating metals from fluorocarbon keto metal compounds |
| US5084201A (en) * | 1989-11-14 | 1992-01-28 | Akzo N.V. | Soluble copper amino alkoxides |
| DE4222021C2 (de) | 1992-07-04 | 1994-06-23 | Christian Dipl Chem Terfloth | Verbindungen zur Abscheidung von Kupferschichten |
| JP3865187B2 (ja) | 1998-11-10 | 2007-01-10 | シャープ株式会社 | 置換フェニルエチレン前駆体およびその合成方法 |
-
2000
- 2000-06-09 US US09/589,757 patent/US6369256B1/en not_active Expired - Fee Related
-
2001
- 2001-05-31 AU AU2001263687A patent/AU2001263687A1/en not_active Abandoned
- 2001-05-31 DE DE60109779T patent/DE60109779D1/de not_active Expired - Lifetime
- 2001-05-31 WO PCT/CA2001/000796 patent/WO2001094291A1/en not_active Ceased
- 2001-05-31 AT AT01937900T patent/ATE292106T1/de not_active IP Right Cessation
- 2001-05-31 JP JP2002501808A patent/JP2003535839A/ja active Pending
- 2001-05-31 EP EP01937900A patent/EP1296933B1/de not_active Expired - Lifetime
- 2001-05-31 CA CA002419837A patent/CA2419837A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| DE60109779D1 (de) | 2005-05-04 |
| WO2001094291A1 (en) | 2001-12-13 |
| CA2419837A1 (en) | 2001-12-31 |
| JP2003535839A (ja) | 2003-12-02 |
| US6369256B1 (en) | 2002-04-09 |
| EP1296933B1 (de) | 2005-03-30 |
| EP1296933A1 (de) | 2003-04-02 |
| AU2001263687A1 (en) | 2001-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |