ATE293843T1 - Verfahren und zusammensetzungen zum nachätzungsbehandeln von schichtfolgen in der halbleiterherstellung - Google Patents

Verfahren und zusammensetzungen zum nachätzungsbehandeln von schichtfolgen in der halbleiterherstellung

Info

Publication number
ATE293843T1
ATE293843T1 AT98928905T AT98928905T ATE293843T1 AT E293843 T1 ATE293843 T1 AT E293843T1 AT 98928905 T AT98928905 T AT 98928905T AT 98928905 T AT98928905 T AT 98928905T AT E293843 T1 ATE293843 T1 AT E293843T1
Authority
AT
Austria
Prior art keywords
compositions
layer stack
methods
post
wafer
Prior art date
Application number
AT98928905T
Other languages
English (en)
Inventor
Chan-Syun David Yang
Yun-Yen Jack Yang
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE293843T1 publication Critical patent/ATE293843T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Seeds, Soups, And Other Foods (AREA)
AT98928905T 1997-06-11 1998-06-10 Verfahren und zusammensetzungen zum nachätzungsbehandeln von schichtfolgen in der halbleiterherstellung ATE293843T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/873,611 US6209551B1 (en) 1997-06-11 1997-06-11 Methods and compositions for post-etch layer stack treatment in semiconductor fabrication
PCT/US1998/011617 WO1998057366A1 (en) 1997-06-11 1998-06-10 Methods and compositions for post-etch layer stack treatment in semiconductor fabrication

Publications (1)

Publication Number Publication Date
ATE293843T1 true ATE293843T1 (de) 2005-05-15

Family

ID=25361985

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98928905T ATE293843T1 (de) 1997-06-11 1998-06-10 Verfahren und zusammensetzungen zum nachätzungsbehandeln von schichtfolgen in der halbleiterherstellung

Country Status (8)

Country Link
US (1) US6209551B1 (de)
EP (1) EP0990265B1 (de)
JP (1) JP4642164B2 (de)
KR (1) KR100524450B1 (de)
AT (1) ATE293843T1 (de)
DE (1) DE69829850T2 (de)
TW (1) TW399268B (de)
WO (1) WO1998057366A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100677965B1 (ko) * 1999-11-01 2007-02-01 동경 엘렉트론 주식회사 기판처리방법 및 기판처리장치
US6667244B1 (en) 2000-03-24 2003-12-23 Gerald M. Cox Method for etching sidewall polymer and other residues from the surface of semiconductor devices
WO2001097270A2 (en) * 2000-06-14 2001-12-20 Applied Materials, Inc. Substrate cleaning apparatus and method
US7276454B2 (en) * 2002-11-02 2007-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Application of impressed-current cathodic protection to prevent metal corrosion and oxidation
US7164095B2 (en) * 2004-07-07 2007-01-16 Noritsu Koki Co., Ltd. Microwave plasma nozzle with enhanced plume stability and heating efficiency
US20060021980A1 (en) * 2004-07-30 2006-02-02 Lee Sang H System and method for controlling a power distribution within a microwave cavity
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US7271363B2 (en) * 2004-09-01 2007-09-18 Noritsu Koki Co., Ltd. Portable microwave plasma systems including a supply line for gas and microwaves
US7189939B2 (en) * 2004-09-01 2007-03-13 Noritsu Koki Co., Ltd. Portable microwave plasma discharge unit
US20060052883A1 (en) * 2004-09-08 2006-03-09 Lee Sang H System and method for optimizing data acquisition of plasma using a feedback control module
CN114442443B (zh) * 2020-10-30 2025-09-02 江苏鲁汶仪器股份有限公司 一种光刻胶剥离方法
CN114335256B (zh) * 2022-03-10 2022-05-20 北京通美晶体技术股份有限公司 一种干法清洗锗晶片的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2592275B2 (ja) * 1987-12-25 1997-03-19 富士通株式会社 プラズマ処理方法
US4985113A (en) 1989-03-10 1991-01-15 Hitachi, Ltd. Sample treating method and apparatus
JP2695960B2 (ja) * 1989-03-10 1998-01-14 株式会社日立製作所 試料処理方法
EP0489179B1 (de) * 1990-06-27 2001-11-14 Fujitsu Limited Verfahren zum herstellen eines integrierten halbleiterschaltkreises
JP2925751B2 (ja) * 1991-01-08 1999-07-28 富士通株式会社 半導体装置の製造方法
US5221424A (en) * 1991-11-21 1993-06-22 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch
JPH06349786A (ja) * 1993-06-04 1994-12-22 Fujitsu Ltd 半導体装置の製造方法
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates
US5631803A (en) * 1995-01-06 1997-05-20 Applied Materials, Inc. Erosion resistant electrostatic chuck with improved cooling system
JP2839040B2 (ja) 1994-02-03 1998-12-16 アプライド マテリアルズ インコーポレイテッド 半導体基板のパッシベーション
JP3339523B2 (ja) * 1994-03-17 2002-10-28 株式会社日立製作所 アッシング方法
JPH0969525A (ja) * 1995-08-31 1997-03-11 Mitsubishi Electric Corp 金属配線の処理方法
US5679211A (en) * 1995-09-18 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Spin-on-glass etchback planarization process using an oxygen plasma to remove an etchback polymer residue

Also Published As

Publication number Publication date
JP2002514354A (ja) 2002-05-14
DE69829850T2 (de) 2006-03-02
EP0990265A1 (de) 2000-04-05
WO1998057366A1 (en) 1998-12-17
US6209551B1 (en) 2001-04-03
DE69829850D1 (de) 2005-05-25
KR100524450B1 (ko) 2005-10-26
EP0990265B1 (de) 2005-04-20
JP4642164B2 (ja) 2011-03-02
KR20010013446A (ko) 2001-02-26
TW399268B (en) 2000-07-21

Similar Documents

Publication Publication Date Title
TW356570B (en) Semiconductor device fabrication method and its treating liquid for the same
DE69829850D1 (de) Verfahren und zusammensetzungen zum nachätzungsbehandeln von schichtfolgen in der halbleiterherstellung
IL132165A0 (en) Article method and apparatus for electrochemical fabrication
DE69425821D1 (de) Verfahren zum Ätzen Silizium-Oxid-Schichten mit Mischungen von HF und Carbonsäure
DE60045134D1 (de) Verfahren und System zum Behandeln eines Werkstückes wie eines Halbleiterwafers
DK1114208T3 (da) Fremgangsmåde til overfladebehandling af aliminiumprodukter
WO2004008493A3 (en) Method and apparatus for supporting semiconductor wafers
TW358978B (en) Method to etch a destruction-area on a semiconductor substrate-edge as well as an etching equipment
ATE557418T1 (de) Verfahren zum ätzen von merkmalen mit hohem streckungsverhältnis
ES2036253T3 (es) Metodo para tratar superficies de sustratos con ayuda de un plasma y un reactor para realizar el metodo.
DE602004015748D1 (de) Lösung zum ätzen von kupferoberflächen und verfahren zur abscheidung von metall auf kupferoberflächen
EP1126514A3 (de) Ätzverfahren
DE60030905D1 (de) Verfahren zur anisotropen Ätzung von Substraten
ATE472172T1 (de) Verfahren zur herstellung einer silizium- elektrode für plasma-reaktionskammer
AU2737301A (en) An insitu post etch process to remove remaining photoresist and residual sidewall passivation
ATE300630T1 (de) Säurebehandlung von rostfreiem stahl
DE69901455D1 (de) Verfahren zum vakuumbeschichten eines gewölbten substrates
WO1995022171A3 (en) Stripping, passivation and corrosion inhibition of semiconductor substrates
US20080230510A1 (en) Method of Processing Substrates
DE59609370D1 (de) Abscheiden von diffusionssperrschichten in einer niederdruckplasmakammer
JPS61266587A (ja) 表面欠陥の少ないオ−ステナイト系ステンレス冷延鋼帯の製造方法
JPS5546535A (en) Method of manufacturing semiconductor device
JPS572585A (en) Forming method for aluminum electrode
JPS52139373A (en) Treating method for compound semiconductor
TW280005B (en) Photoresist hardening process of IC

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties