ATE294444T1 - Verfahren zum zerstörungsfreien auslesen und vorrichtung zur verwendung mit dem verfahren - Google Patents

Verfahren zum zerstörungsfreien auslesen und vorrichtung zur verwendung mit dem verfahren

Info

Publication number
ATE294444T1
ATE294444T1 AT01997813T AT01997813T ATE294444T1 AT E294444 T1 ATE294444 T1 AT E294444T1 AT 01997813 T AT01997813 T AT 01997813T AT 01997813 T AT01997813 T AT 01997813T AT E294444 T1 ATE294444 T1 AT E294444T1
Authority
AT
Austria
Prior art keywords
phase
memory cell
capacitor
logic state
signal
Prior art date
Application number
AT01997813T
Other languages
English (en)
Inventor
Per-Erik Nordal
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Application granted granted Critical
Publication of ATE294444T1 publication Critical patent/ATE294444T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Computer Hardware Design (AREA)
  • Engineering & Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
  • Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
  • Dram (AREA)
  • Testing Of Coins (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Magnetic Record Carriers (AREA)
  • Glass Compositions (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Communication Control (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Inspection Of Paper Currency And Valuable Securities (AREA)
AT01997813T 2000-11-27 2001-11-27 Verfahren zum zerstörungsfreien auslesen und vorrichtung zur verwendung mit dem verfahren ATE294444T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO20006002A NO316580B1 (no) 2000-11-27 2000-11-27 Fremgangsmåte til ikke-destruktiv utlesing og apparat til bruk ved fremgangsmåten
PCT/NO2001/000472 WO2002043070A1 (en) 2000-11-27 2001-11-27 A method for non-destructive readout and apparatus for use with the method

Publications (1)

Publication Number Publication Date
ATE294444T1 true ATE294444T1 (de) 2005-05-15

Family

ID=19911847

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01997813T ATE294444T1 (de) 2000-11-27 2001-11-27 Verfahren zum zerstörungsfreien auslesen und vorrichtung zur verwendung mit dem verfahren

Country Status (14)

Country Link
US (1) US6804139B2 (de)
EP (1) EP1346366B1 (de)
JP (1) JP3944450B2 (de)
KR (1) KR100559926B1 (de)
CN (1) CN1329920C (de)
AT (1) ATE294444T1 (de)
AU (2) AU2002223164B2 (de)
CA (1) CA2429366C (de)
DE (1) DE60110461T2 (de)
DK (1) DK1346366T3 (de)
ES (1) ES2239177T3 (de)
NO (1) NO316580B1 (de)
RU (1) RU2250518C1 (de)
WO (1) WO2002043070A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756620B2 (en) 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
CN1303692C (zh) * 2002-09-04 2007-03-07 松下电器产业株式会社 半导体存储装置及其制造方法和驱动方法
US7187600B2 (en) * 2004-09-22 2007-03-06 Freescale Semiconductor, Inc. Method and apparatus for protecting an integrated circuit from erroneous operation
RU2383945C2 (ru) * 2006-06-09 2010-03-10 Юрий Генрихович Кригер Методы неразрушаемого считывания информации с ферроэлектрических элементов памяти
US7929338B2 (en) * 2009-02-24 2011-04-19 International Business Machines Corporation Memory reading method for resistance drift mitigation
US8488361B2 (en) * 2011-02-01 2013-07-16 Stmicroelectronics S.R.L. Memory support provided with memory elements of ferroelectric material and improved non-destructive reading method thereof
US8837195B2 (en) * 2012-09-25 2014-09-16 Palo Alto Research Center Incorporated Systems and methods for reading ferroelectric memories
US9460770B1 (en) 2015-09-01 2016-10-04 Micron Technology, Inc. Methods of operating ferroelectric memory cells, and related ferroelectric memory cells
EP4625415A1 (de) * 2024-03-28 2025-10-01 IMEC vzw Verfahren und speichervorrichtung zum symmetrischen zerstörungsfreien auslesen einer ferroelektrischen speicherzelle

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3132326A (en) * 1960-03-16 1964-05-05 Control Data Corp Ferroelectric data storage system and method
US4068217A (en) * 1975-06-30 1978-01-10 International Business Machines Corporation Ultimate density non-volatile cross-point semiconductor memory array
JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
US5151877A (en) 1990-12-19 1992-09-29 The Charles Stark Draper Lab., Inc. Ferroelectric space charge capacitor memory system
US5530667A (en) * 1991-03-01 1996-06-25 Olympus Optical Co., Ltd. Ferroelectric memory device
US5262982A (en) * 1991-07-18 1993-11-16 National Semiconductor Corporation Nondestructive reading of a ferroelectric capacitor
JPH05129622A (ja) * 1991-10-31 1993-05-25 Olympus Optical Co Ltd 強誘電体メモリ装置
RU2127005C1 (ru) * 1993-01-27 1999-02-27 Самсунг Электроникс Ко., Лтд. Полупроводниковый прибор и способ его изготовления (варианты)
JPH06275062A (ja) * 1993-03-19 1994-09-30 Olympus Optical Co Ltd 強誘電体メモリ装置
US5666305A (en) * 1993-03-29 1997-09-09 Olympus Optical Co., Ltd. Method of driving ferroelectric gate transistor memory cell
JP3570692B2 (ja) * 1994-01-18 2004-09-29 ローム株式会社 不揮発性メモリ
US5729488A (en) * 1994-08-26 1998-03-17 Hughes Electronics Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect
KR100206713B1 (ko) * 1996-10-09 1999-07-01 윤종용 강유전체 메모리 장치에서의 비파괴적 억세싱 방법 및 그 억세싱 회로
RU2121174C1 (ru) * 1997-09-05 1998-10-27 Александр Анатольевич Мохнатюк Способ создания оптической памяти
EP1094469A1 (de) * 1999-10-22 2001-04-25 Infineon Technologies AG Anordnung zur Auswertung eines aus einem ferroelektrischen Speicherkondensator ausgelesenen Signales
US6574134B1 (en) * 2002-01-18 2003-06-03 Macronix International Co., Ltd. Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability

Also Published As

Publication number Publication date
CN1329920C (zh) 2007-08-01
US20020191435A1 (en) 2002-12-19
JP3944450B2 (ja) 2007-07-11
CA2429366C (en) 2007-02-13
CN1488147A (zh) 2004-04-07
US6804139B2 (en) 2004-10-12
RU2250518C1 (ru) 2005-04-20
ES2239177T3 (es) 2005-09-16
EP1346366B1 (de) 2005-04-27
AU2316402A (en) 2002-06-03
DE60110461T2 (de) 2006-04-27
CA2429366A1 (en) 2002-05-30
NO316580B1 (no) 2004-02-23
DE60110461D1 (de) 2005-06-02
WO2002043070A1 (en) 2002-05-30
EP1346366A1 (de) 2003-09-24
KR20030059271A (ko) 2003-07-07
NO20006002L (no) 2002-05-28
HK1063687A1 (en) 2005-01-07
DK1346366T3 (da) 2005-08-01
AU2002223164B2 (en) 2005-02-17
JP2004515023A (ja) 2004-05-20
NO20006002D0 (no) 2000-11-27
KR100559926B1 (ko) 2006-03-13

Similar Documents

Publication Publication Date Title
CN105301659B (zh) 湿气进入传感器
WO2002015458A3 (en) Discovering hidden damage in machinery and predicting remaining life
MY126044A (en) Sample detection to initiate timing of an electrochemical assay
ATE294444T1 (de) Verfahren zum zerstörungsfreien auslesen und vorrichtung zur verwendung mit dem verfahren
ATE286259T1 (de) System und verfahren zur überwachung von leistungsdaten in bezug auf eine elektrische komponente
EP1333436A3 (de) System und Methode zum Extrahieren des Speicherzustands für ein dielektrisches Speichermedium, und Informationsspeichergerät
NO20003507D0 (no) FremgangsmÕte til dynamisk lesing/skriving i et ferroelektrisk minne samt kretsløsninger for utførelse av fremgangsmÕten
GB2000299B (en) Detecting metabolic activity
ATE456853T1 (de) Verfahren und vorrichtung zur ueberwachung von schaltgeräten in elektrischen schaltanlagen
CN114487563A (zh) 基于相位差的非侵入式电压测量方法、装置和电压传感器
Blutstein et al. Fast sweep differential pulse voltammetry at a dropping mercury electrode
Dai et al. Long-term monitoring of timber moisture content below the fiber saturation point using wood resistance sensors
RU2003119443A (ru) Способ неразрушающего считывания данных и устройство для осуществления данного способа
JP2004515023A5 (de)
WO2002039131A3 (en) Method for locating defects and measuring resistance in a test structure
DE59813633D1 (de) Verfahren zur detektion von kondensationen an oberflächen
JP2921068B2 (ja) 部分放電試験装置
RU2240546C1 (ru) Способ определения влажности капиллярно-пористых материалов
Millard et al. Galvanostatic pulse techniques: A rapid method of assessing corrosion rates of steel in concrete structures
TW562937B (en) Method for fast determining defect type of word line
TW200732658A (en) Contactless system and method for detecting defective points on a chargeable surface
JP3017314B2 (ja) プローブ表面の汚染検出装置
CN120891351B (zh) 一种基于开尔文发射极的功率igbt结温检测系统及方法
Bond et al. Use of pulsed direct current potential to minimize charging current in alternating current polarography
Chan Surface insulation resistance methodology for today's manufacturing technology

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties