ATE302294T1 - Verfahren zur chemischen dampfablagerung von wolfram auf einem halbleitersubstrat - Google Patents

Verfahren zur chemischen dampfablagerung von wolfram auf einem halbleitersubstrat

Info

Publication number
ATE302294T1
ATE302294T1 AT00403705T AT00403705T ATE302294T1 AT E302294 T1 ATE302294 T1 AT E302294T1 AT 00403705 T AT00403705 T AT 00403705T AT 00403705 T AT00403705 T AT 00403705T AT E302294 T1 ATE302294 T1 AT E302294T1
Authority
AT
Austria
Prior art keywords
tungsten
substrate
chemical vapor
semiconductor substrate
vapor deposition
Prior art date
Application number
AT00403705T
Other languages
English (en)
Inventor
Hans Vercammen
Joris Baele
Original Assignee
Ami Semiconductor Belgium Bvba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ami Semiconductor Belgium Bvba filed Critical Ami Semiconductor Belgium Bvba
Application granted granted Critical
Publication of ATE302294T1 publication Critical patent/ATE302294T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT00403705T 2000-12-28 2000-12-28 Verfahren zur chemischen dampfablagerung von wolfram auf einem halbleitersubstrat ATE302294T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00403705A EP1219725B1 (de) 2000-12-28 2000-12-28 Verfahren zur chemischen Dampfablagerung von Wolfram auf einem Halbleitersubstrat

Publications (1)

Publication Number Publication Date
ATE302294T1 true ATE302294T1 (de) 2005-09-15

Family

ID=8174012

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00403705T ATE302294T1 (de) 2000-12-28 2000-12-28 Verfahren zur chemischen dampfablagerung von wolfram auf einem halbleitersubstrat

Country Status (6)

Country Link
US (1) US6544889B2 (de)
EP (1) EP1219725B1 (de)
JP (1) JP2002212725A (de)
CN (1) CN1366334A (de)
AT (1) ATE302294T1 (de)
DE (1) DE60022067T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6644889B2 (en) * 1998-10-21 2003-11-11 Hartman Ew, Inc. Headwall for drain pipe
US6699788B2 (en) * 2001-11-13 2004-03-02 Chartered Semiconductors Manufacturing Limited Method for integrated nucleation and bulk film deposition
KR100884339B1 (ko) * 2006-06-29 2009-02-18 주식회사 하이닉스반도체 반도체 소자의 텅스텐막 형성방법 및 이를 이용한 텅스텐배선층 형성방법
US20130224948A1 (en) * 2012-02-28 2013-08-29 Globalfoundries Inc. Methods for deposition of tungsten in the fabrication of an integrated circuit
US8834830B2 (en) * 2012-09-07 2014-09-16 Midwest Inorganics LLC Method for the preparation of anhydrous hydrogen halides, inorganic substances and/or inorganic hydrides by using as reactants inorganic halides and reducing agents
CN104975268A (zh) * 2015-06-03 2015-10-14 武汉新芯集成电路制造有限公司 一种金属钨薄膜的制备方法
TWI720106B (zh) * 2016-01-16 2021-03-01 美商應用材料股份有限公司 Pecvd含鎢硬遮罩膜及製造方法
US10192775B2 (en) 2016-03-17 2019-01-29 Applied Materials, Inc. Methods for gapfill in high aspect ratio structures
US11289374B2 (en) 2016-12-15 2022-03-29 Applied Materials, Inc. Nucleation-free gap fill ALD process
CN107481926A (zh) * 2017-08-31 2017-12-15 长江存储科技有限责任公司 一种金属钨的填充方法
US11810766B2 (en) * 2018-07-05 2023-11-07 Applied Materials, Inc. Protection of aluminum process chamber components
US11133178B2 (en) 2019-09-20 2021-09-28 Applied Materials, Inc. Seamless gapfill with dielectric ALD films

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
EP0486927A1 (de) * 1990-11-20 1992-05-27 Air Products And Chemicals, Inc. Abscheidung von Wolframschichten aus Mischungen von Wolframhexafluorid, Organohydrosilanen und Wasserstoff
CA2067565C (en) * 1992-04-29 1999-02-16 Ismail T. Emesh Deposition of tungsten
US6162715A (en) * 1997-06-30 2000-12-19 Applied Materials, Inc. Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
US5795824A (en) 1997-08-28 1998-08-18 Novellus Systems, Inc. Method for nucleation of CVD tungsten films

Also Published As

Publication number Publication date
DE60022067D1 (de) 2005-09-22
US6544889B2 (en) 2003-04-08
EP1219725B1 (de) 2005-08-17
JP2002212725A (ja) 2002-07-31
US20020086110A1 (en) 2002-07-04
DE60022067T2 (de) 2006-06-01
EP1219725A1 (de) 2002-07-03
CN1366334A (zh) 2002-08-28

Similar Documents

Publication Publication Date Title
CN113463069B (zh) 两种不同材料同时选择性沉积在两个不同表面上
Koleske et al. Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
ATE302294T1 (de) Verfahren zur chemischen dampfablagerung von wolfram auf einem halbleitersubstrat
JP4836347B2 (ja) 基板上に薄膜を成長させる方法
KR910005397A (ko) 반도체 웨이퍼 상에 텅스텐 층을 cvd 증착시키는 방법
KR910007089A (ko) 반도체 웨이퍼 처리 장치용 세척 방법
KR920702794A (ko) 텅스텐 실리사이드 화학 기상 증착
US5587344A (en) Method for fabricating an oxynitride film for use in a semiconductor device
JP2760717B2 (ja) 半導体デバイスの製造方法
TW200620534A (en) Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
KR910015011A (ko) 금속 또는 금속 실리사이드막의 형성방법
KR900017107A (ko) 선택적 화학기상성장법(化學氣相成長法, cvd법) 및 동법을 사용한 cvd장치
JP2626925B2 (ja) 基板処理装置および基板処理方法
JPH09283504A (ja) 混合ガスの供給方法及び混合ガス供給装置並びにこれらを備えた半導体製造装置
KR920010757A (ko) 텅스텐 헥사플루오라이드, 유기하이드로실란 및 수소의 혼합물로부터 텅스텐막을 증착시키는 방법
US6812146B2 (en) Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound
US5693377A (en) Method of reducing carbon incorporation into films produced by chemical vapor deposition involving titanium organometallic and metal-organic precursor compounds
US6306776B1 (en) Catalytic breakdown of reactant gases in chemical vapor deposition
US20200040454A1 (en) Method to increase deposition rate of ald process
KR20070084435A (ko) 박막제조방법 및 박막제조장치
KR970030477A (ko) 실리콘 질화막 형성방법
JP2004319842A (ja) 気相成長法によるシリコン窒化物膜の製造方法
JP4618780B2 (ja) 薄膜製造方法
KR100235939B1 (ko) 티타늄탄화질화막 형성방법
JP2006144084A (ja) 薄膜製造方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties