ATE303612T1 - Chemisch verstärkte positivphotoresistzusammensetzung - Google Patents

Chemisch verstärkte positivphotoresistzusammensetzung

Info

Publication number
ATE303612T1
ATE303612T1 AT99307323T AT99307323T ATE303612T1 AT E303612 T1 ATE303612 T1 AT E303612T1 AT 99307323 T AT99307323 T AT 99307323T AT 99307323 T AT99307323 T AT 99307323T AT E303612 T1 ATE303612 T1 AT E303612T1
Authority
AT
Austria
Prior art keywords
molecular weight
photoresist composition
chemically amplified
positive photoresist
amplified positive
Prior art date
Application number
AT99307323T
Other languages
English (en)
Inventor
Joo-Hyeon Park
Dong-Chul Seo
Sun-Yi Park
Seong-Ju Kim
Original Assignee
Korea Kumho Petrochem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Kumho Petrochem Co Ltd filed Critical Korea Kumho Petrochem Co Ltd
Application granted granted Critical
Publication of ATE303612T1 publication Critical patent/ATE303612T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT99307323T 1998-09-23 1999-09-15 Chemisch verstärkte positivphotoresistzusammensetzung ATE303612T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980039372A KR100271420B1 (ko) 1998-09-23 1998-09-23 화학증폭형 양성 포토레지스트 조성물

Publications (1)

Publication Number Publication Date
ATE303612T1 true ATE303612T1 (de) 2005-09-15

Family

ID=19551575

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99307323T ATE303612T1 (de) 1998-09-23 1999-09-15 Chemisch verstärkte positivphotoresistzusammensetzung

Country Status (6)

Country Link
US (1) US6268106B1 (de)
EP (1) EP0989458B1 (de)
JP (1) JP3040998B2 (de)
KR (1) KR100271420B1 (de)
AT (1) ATE303612T1 (de)
DE (1) DE69926963T2 (de)

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KR20000056355A (ko) * 1999-02-19 2000-09-15 김영환 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물
KR100314761B1 (ko) * 1999-03-03 2001-11-17 윤덕용 노르보르넨에 콜릭산, 디옥시콜릭산 또는 리소콜릭산 유도체를 결합시킨 단량체를 이용한 중합체 및 이를 함유하는 포토레지스트 조성물
KR20000073149A (ko) * 1999-05-07 2000-12-05 김영환 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100301062B1 (ko) * 1999-07-29 2001-09-22 윤종용 백본이 환상구조를 가지는 감광성 폴리머와 이를 포함하는 레지스트 조성물
KR100535149B1 (ko) * 1999-08-17 2005-12-07 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
KR100604793B1 (ko) * 1999-11-16 2006-07-26 삼성전자주식회사 감광성 중합체 및 이를 포함하는 화학 증폭형포토레지스트 조성물
KR100332463B1 (ko) * 1999-12-20 2002-04-13 박찬구 노보난계 저분자 화합물 첨가제를 포함하는 화학증폭형레지스트 조성물
KR100576200B1 (ko) * 2000-03-06 2006-05-03 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 재료 및 패턴 형성 방법
US6531627B2 (en) * 2000-04-27 2003-03-11 Shin-Etsu Chemical Co., Ltd. Ester compounds, polymers, resist compositions and patterning process
US6492090B2 (en) * 2000-04-28 2002-12-10 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
JP3997381B2 (ja) * 2000-04-28 2007-10-24 信越化学工業株式会社 脂環構造を有する新規エステル化合物及びその製造方法
JP3997382B2 (ja) * 2000-04-28 2007-10-24 信越化学工業株式会社 脂環構造を有する新規エステル化合物及びその製造方法
KR100583092B1 (ko) * 2000-06-15 2006-05-24 주식회사 하이닉스반도체 레지스트 플로우 공정용 포토레지스트 조성물의 첨가제
KR100527533B1 (ko) * 2000-06-21 2005-11-09 주식회사 하이닉스반도체 Ｔｉｐｓ 공정용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
JP2002343860A (ja) * 2001-05-17 2002-11-29 Tokyo Ohka Kogyo Co Ltd 保護膜形成用材料
KR100811394B1 (ko) * 2001-10-18 2008-03-07 주식회사 하이닉스반도체 신규의 네가티브형 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
US6756180B2 (en) 2002-10-22 2004-06-29 International Business Machines Corporation Cyclic olefin-based resist compositions having improved image stability
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
TWI371657B (en) * 2004-02-20 2012-09-01 Fujifilm Corp Positive resist composition for immersion exposure and method of pattern formation with the same
WO2006017035A1 (en) 2004-07-07 2006-02-16 Promerus Llc Photosensitive dielectric resin compositions and their uses
KR100562205B1 (ko) * 2004-09-13 2006-03-22 금호석유화학 주식회사 2차 히드록실기를 갖는 알킬 환상 올레핀과 아크릴화합물의 중합체 및 이를 포함하는 화학증폭형 레지스트조성물
KR100770223B1 (ko) 2005-12-15 2007-10-26 삼성전자주식회사 포토레지스트 형성용 화합물, 이를 포함하는 저분자포토레지스트 조성물 및 패턴 형성 방법
US9005504B2 (en) * 2009-06-17 2015-04-14 Panasonic Intellectual Property Management Co., Ltd. Method of manufacturing resin molded electronic component
JP6222057B2 (ja) * 2014-11-25 2017-11-01 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
TWI702147B (zh) * 2015-04-28 2020-08-21 日商富士軟片股份有限公司 用於製造有機半導體的積層體及套組
CN114957532B (zh) * 2022-05-26 2023-06-13 广东粤港澳大湾区黄埔材料研究院 一种用于电子束光刻胶的聚合物树脂及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
KR100536824B1 (ko) * 1996-03-07 2006-03-09 스미토모 베이클라이트 가부시키가이샤 산불안정성펜던트기를지닌다중고리중합체를포함하는포토레지스트조성물
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5879857A (en) * 1997-02-21 1999-03-09 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100321080B1 (ko) * 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100557368B1 (ko) * 1998-01-16 2006-03-10 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
US6048664A (en) * 1999-03-12 2000-04-11 Lucent Technologies, Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material

Also Published As

Publication number Publication date
JP2000098615A (ja) 2000-04-07
DE69926963T2 (de) 2006-03-02
EP0989458A3 (de) 2000-05-17
DE69926963D1 (de) 2005-10-06
JP3040998B2 (ja) 2000-05-15
EP0989458B1 (de) 2005-08-31
KR20000020669A (ko) 2000-04-15
EP0989458A2 (de) 2000-03-29
KR100271420B1 (ko) 2001-03-02
US6268106B1 (en) 2001-07-31

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