ATE304734T1 - Niob pulver, gesinterter körper und daraus bestehender kondensator - Google Patents

Niob pulver, gesinterter körper und daraus bestehender kondensator

Info

Publication number
ATE304734T1
ATE304734T1 AT00946343T AT00946343T ATE304734T1 AT E304734 T1 ATE304734 T1 AT E304734T1 AT 00946343 T AT00946343 T AT 00946343T AT 00946343 T AT00946343 T AT 00946343T AT E304734 T1 ATE304734 T1 AT E304734T1
Authority
AT
Austria
Prior art keywords
sintered body
powder
niobia
capacitor consisting
ppm
Prior art date
Application number
AT00946343T
Other languages
English (en)
Inventor
Kazumi Naito
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE304734T1 publication Critical patent/ATE304734T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0068—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only nitrides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
  • Ceramic Capacitors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT00946343T 1999-07-15 2000-07-14 Niob pulver, gesinterter körper und daraus bestehender kondensator ATE304734T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20105899 1999-07-15
PCT/JP2000/004753 WO2001006525A1 (fr) 1999-07-15 2000-07-14 Poudre de niobium, corps fritte a base de cette poudre, et condensateur comprenant ce corps

Publications (1)

Publication Number Publication Date
ATE304734T1 true ATE304734T1 (de) 2005-09-15

Family

ID=16434696

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00946343T ATE304734T1 (de) 1999-07-15 2000-07-14 Niob pulver, gesinterter körper und daraus bestehender kondensator

Country Status (9)

Country Link
EP (1) EP1204126B1 (de)
JP (1) JP4527332B2 (de)
KR (1) KR100799634B1 (de)
CN (1) CN1221994C (de)
AT (1) ATE304734T1 (de)
AU (1) AU6017200A (de)
DE (1) DE60022655T2 (de)
TW (1) TW464889B (de)
WO (1) WO2001006525A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19953946A1 (de) * 1999-11-09 2001-05-10 Starck H C Gmbh Co Kg Kondensatorpulver
GB2359081A (en) 2000-02-11 2001-08-15 Astrazeneca Uk Ltd Pharmaceutically active thiazolopyrimidines
JP4261105B2 (ja) 2000-03-01 2009-04-30 キャボット コーポレイション 窒化バルブ金属およびその製造方法
KR100758945B1 (ko) † 2000-08-10 2007-09-14 쇼와 덴코 가부시키가이샤 니오브합금분
KR100717158B1 (ko) * 2001-03-16 2007-05-11 쇼와 덴코 가부시키가이샤 콘덴서용 니오브 및 그 니오브의 소결체를 사용한 콘덴서
JP4480943B2 (ja) * 2001-05-15 2010-06-16 昭和電工株式会社 一酸化ニオブ解砕粉、一酸化ニオブ焼結体及び一酸化ニオブ焼結体を用いたコンデンサ
AU2008200187B2 (en) * 2001-05-15 2010-02-18 Showa Denko K.K. Niobium powder, niobium sintered body and capacitor using the sintered body
US7737066B2 (en) 2001-05-15 2010-06-15 Showa Denko K.K. Niobium monoxide powder, niobium monoxide sintered body and capacitor using the sintered body
ATE554490T1 (de) 2003-11-10 2012-05-15 Showa Denko Kk Niobpulver für einen kondensator, niob- gesinterter körper und kondensator
CN1825509B (zh) * 2005-02-23 2011-04-06 三洋电机株式会社 固体电解电容器及其制造方法
JP4969233B2 (ja) * 2006-12-20 2012-07-04 三洋電機株式会社 固体電解コンデンサ及び固体電解コンデンサ用のニオブ製陽極リードの製造方法
CN100528418C (zh) * 2008-01-11 2009-08-19 宁夏东方钽业股份有限公司 含氮均匀的阀金属粉末及其制造方法,阀金属坯块和阀金属烧结体以及电解电容器的阳极
KR101102872B1 (ko) * 2009-07-17 2012-01-09 충남대학교산학협력단 자전연소반응을 이용한 나노 탄탈륨 분말의 제조방법
JP6353912B2 (ja) 2014-09-11 2018-07-04 石原ケミカル株式会社 Ｔａ−Ｎｂ合金粉末および固体電解コンデンサ用陽極素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01167206A (ja) * 1987-12-22 1989-06-30 Kobe Steel Ltd ニオブ窒化物の製造方法
JPH10133791A (ja) * 1996-10-28 1998-05-22 Victor Co Of Japan Ltd 光無線伝送装置、インターフェース及び携帯型情報端末
JP3254163B2 (ja) 1997-02-28 2002-02-04 昭和電工株式会社 コンデンサ
JP3233084B2 (ja) * 1997-11-06 2001-11-26 日本電気株式会社 固体電解コンデンサの陽極体の製造方法
JP3196832B2 (ja) * 1998-05-15 2001-08-06 日本電気株式会社 固体電解コンデンサ及びその製造方法

Also Published As

Publication number Publication date
EP1204126A4 (de) 2003-05-07
CN1363102A (zh) 2002-08-07
CN1221994C (zh) 2005-10-05
EP1204126B1 (de) 2005-09-14
DE60022655T2 (de) 2006-06-29
WO2001006525A1 (fr) 2001-01-25
AU6017200A (en) 2001-02-05
DE60022655D1 (de) 2005-10-20
TW464889B (en) 2001-11-21
KR100799634B1 (ko) 2008-01-30
JP4527332B2 (ja) 2010-08-18
KR20020016891A (ko) 2002-03-06
EP1204126A1 (de) 2002-05-08

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Legal Events

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