ATE305171T1 - Ablösen von monokristallinen schichten ausgehend von einer ionenimplantation - Google Patents

Ablösen von monokristallinen schichten ausgehend von einer ionenimplantation

Info

Publication number
ATE305171T1
ATE305171T1 AT99905835T AT99905835T ATE305171T1 AT E305171 T1 ATE305171 T1 AT E305171T1 AT 99905835 T AT99905835 T AT 99905835T AT 99905835 T AT99905835 T AT 99905835T AT E305171 T1 ATE305171 T1 AT E305171T1
Authority
AT
Austria
Prior art keywords
crystal
crystal structure
ion implantation
monocrystalline layers
detaching
Prior art date
Application number
AT99905835T
Other languages
English (en)
Inventor
Miguel Levy
Richard M Osgood Jr
Original Assignee
Univ Columbia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Columbia filed Critical Univ Columbia
Application granted granted Critical
Publication of ATE305171T1 publication Critical patent/ATE305171T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Physical Vapour Deposition (AREA)
AT99905835T 1998-02-17 1999-02-08 Ablösen von monokristallinen schichten ausgehend von einer ionenimplantation ATE305171T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/025,114 US6120597A (en) 1998-02-17 1998-02-17 Crystal ion-slicing of single-crystal films
PCT/US1999/002625 WO1999041779A1 (en) 1998-02-17 1999-02-08 Crystal ion-slicing of single-crystal films

Publications (1)

Publication Number Publication Date
ATE305171T1 true ATE305171T1 (de) 2005-10-15

Family

ID=21824125

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99905835T ATE305171T1 (de) 1998-02-17 1999-02-08 Ablösen von monokristallinen schichten ausgehend von einer ionenimplantation

Country Status (11)

Country Link
US (1) US6120597A (de)
EP (1) EP1060509B1 (de)
JP (1) JP2002503885A (de)
KR (1) KR100552448B1 (de)
CN (1) CN1158702C (de)
AT (1) ATE305171T1 (de)
AU (1) AU2590699A (de)
CA (1) CA2320218C (de)
DE (1) DE69927360T2 (de)
IL (1) IL137607A0 (de)
WO (1) WO1999041779A1 (de)

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US6540827B1 (en) * 1998-02-17 2003-04-01 Trustees Of Columbia University In The City Of New York Slicing of single-crystal films using ion implantation
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JP3619058B2 (ja) * 1998-06-18 2005-02-09 キヤノン株式会社 半導体薄膜の製造方法
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WO2001075195A2 (en) * 2000-03-31 2001-10-11 The Trustees Of Columbia University In The City Of New York Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and a waveguide polarization mode converter using the same
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US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
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CN103696022B (zh) * 2013-12-27 2016-04-13 贵州蓝科睿思技术研发中心 一种离子注入分离蓝宝石的方法
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CN104630899B (zh) * 2015-01-17 2017-09-22 王宏兴 金刚石层的分离方法
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Also Published As

Publication number Publication date
JP2002503885A (ja) 2002-02-05
DE69927360T2 (de) 2006-06-29
US6120597A (en) 2000-09-19
CN1158702C (zh) 2004-07-21
WO1999041779A1 (en) 1999-08-19
AU2590699A (en) 1999-08-30
CA2320218A1 (en) 1999-08-19
KR100552448B1 (ko) 2006-02-20
CA2320218C (en) 2009-06-02
EP1060509A4 (de) 2001-05-02
KR20010034502A (ko) 2001-04-25
CN1291349A (zh) 2001-04-11
DE69927360D1 (de) 2006-02-02
EP1060509B1 (de) 2005-09-21
IL137607A0 (en) 2001-07-24
EP1060509A1 (de) 2000-12-20

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