ATE306119T1 - Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben - Google Patents

Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben

Info

Publication number
ATE306119T1
ATE306119T1 AT01919912T AT01919912T ATE306119T1 AT E306119 T1 ATE306119 T1 AT E306119T1 AT 01919912 T AT01919912 T AT 01919912T AT 01919912 T AT01919912 T AT 01919912T AT E306119 T1 ATE306119 T1 AT E306119T1
Authority
AT
Austria
Prior art keywords
semiconductor
heat dissipation
production method
same
dissipation plate
Prior art date
Application number
AT01919912T
Other languages
English (en)
Inventor
Mitsuo Osada
Norio Hirayama
Tadashi Arikawa
Yoshinari Amano
Hidetoshi Maesato
Hidefumi Hayashi
Hiroshi Murai
Original Assignee
Almt Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000372405A external-priority patent/JP3856640B2/ja
Application filed by Almt Corp filed Critical Almt Corp
Application granted granted Critical
Publication of ATE306119T1 publication Critical patent/ATE306119T1/de

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/01Layered products comprising a layer of metal all layers being exclusively metallic
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/0475Impregnated alloys
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04Alloys based on tungsten or molybdenum
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/258Metallic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/02Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H10W70/027Mechanical treatments, e.g. deforming, punching or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10Processes characterised by the sequence of their steps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00Aspects linked to processes or compositions used in powder metallurgy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • H10W76/13Containers comprising a conductive base serving as an interconnection
    • H10W76/134Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)
AT01919912T 2000-04-14 2001-04-12 Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben ATE306119T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000113006 2000-04-14
JP2000372405A JP3856640B2 (ja) 2000-01-26 2000-12-07 半導体搭載用放熱基板材料、その製造方法、及びそれを用いたセラミックパッケージ
PCT/JP2001/003164 WO2001080313A1 (fr) 2000-04-14 2001-04-12 Materiau de plaque de dissipation thermique sur laquelle est monte un semi-conducteur, procede de fabrication et boitier ceramique obtenu

Publications (1)

Publication Number Publication Date
ATE306119T1 true ATE306119T1 (de) 2005-10-15

Family

ID=26590109

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01919912T ATE306119T1 (de) 2000-04-14 2001-04-12 Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben

Country Status (4)

Country Link
EP (2) EP1231633B1 (de)
AT (1) ATE306119T1 (de)
DE (1) DE60113797T2 (de)
WO (1) WO2001080313A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005046404B4 (de) 2005-09-28 2008-12-24 Infineon Technologies Ag Verfahren zur Minderung von Streuungen in der Durchbiegung von gewalzten Bodenplatten und Leistungshalbleitermodul mit einer nach diesem Verfahren hergestellten Bodenplatte
EP1985718A4 (de) * 2006-02-15 2009-09-16 Jfe Prec Corp Cr-Cu-LEGIERUNG, HERSTELLUNGSVERFAHREN DAFÜR, KÜHLKÖRPER FÜR EINEN HALBLEITER SOWIE WÄRMEABLEITKOMPONENTE FÜR EINEN HALBLEITER
US20090035632A1 (en) * 2007-07-31 2009-02-05 Kirkwood Brad L Solid oxide fuel cell electrode systems and methods
KR101679104B1 (ko) * 2009-10-01 2016-11-23 제이에프이 세이미츠 가부시키가이샤 전자 기기용 히트 싱크 및 그의 제조 프로세스
CN102489508A (zh) * 2011-12-06 2012-06-13 无锡乐普金属科技有限公司 钼铜合金箔片的交叉轧制方法
CN102601116A (zh) * 2012-03-19 2012-07-25 长沙升华微电子材料有限公司 一种铜基电子封装材料的制备方法
CN103143714B (zh) * 2013-03-29 2015-01-14 西北有色金属研究院 一种Cu/MoCu/Cu三层复合板坯的制备方法
JP5818045B1 (ja) * 2014-12-05 2015-11-18 株式会社半導体熱研究所 放熱基板と、それを使用した半導体パッケージと半導体モジュール
JP6455896B1 (ja) * 2017-11-18 2019-01-23 Jfe精密株式会社 放熱板及びその製造方法
WO2019180914A1 (ja) * 2018-03-23 2019-09-26 三菱マテリアル株式会社 電子部品実装モジュール

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3426916A1 (de) * 1984-07-21 1986-01-23 Vacuumschmelze Gmbh, 6450 Hanau Verfahren zur herstellung eines verbundwerkstoffes
JP2746279B2 (ja) * 1990-06-18 1998-05-06 日本タングステン 株式会社 半導体装置用基板材料及びその製造方法
US5493153A (en) * 1992-11-26 1996-02-20 Tokyo Tungsten Co., Ltd. Plastic-packaged semiconductor device having a heat sink matched with a plastic package
JPH0892667A (ja) * 1994-09-22 1996-04-09 Tokyo Tungsten Co Ltd 金属複合材料及びその製造方法
JP3482580B2 (ja) * 1995-11-28 2003-12-22 株式会社アライドマテリアル 高放熱性金属複合板材及びそれを用いた高放熱性金属基板
JP3548991B2 (ja) * 1997-08-22 2004-08-04 株式会社アライドマテリアル 放熱基板及びその製造方法
JP2000026926A (ja) * 1998-07-08 2000-01-25 Tokyo Tungsten Co Ltd リードフレーム用複合材とそれを用いた半導体パッケージ

Also Published As

Publication number Publication date
EP1231633A1 (de) 2002-08-14
EP1231633A4 (de) 2003-05-28
WO2001080313A1 (fr) 2001-10-25
DE60113797T2 (de) 2006-06-08
EP1231633B1 (de) 2005-10-05
DE60113797D1 (de) 2006-02-16
EP1553627A1 (de) 2005-07-13

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