ATE306119T1 - Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben - Google Patents
Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselbenInfo
- Publication number
- ATE306119T1 ATE306119T1 AT01919912T AT01919912T ATE306119T1 AT E306119 T1 ATE306119 T1 AT E306119T1 AT 01919912 T AT01919912 T AT 01919912T AT 01919912 T AT01919912 T AT 01919912T AT E306119 T1 ATE306119 T1 AT E306119T1
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor
- heat dissipation
- production method
- same
- dissipation plate
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0475—Impregnated alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/258—Metallic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
- H10W70/027—Mechanical treatments, e.g. deforming, punching or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/12—Containers or parts thereof characterised by their shape
- H10W76/13—Containers comprising a conductive base serving as an interconnection
- H10W76/134—Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000113006 | 2000-04-14 | ||
| JP2000372405A JP3856640B2 (ja) | 2000-01-26 | 2000-12-07 | 半導体搭載用放熱基板材料、その製造方法、及びそれを用いたセラミックパッケージ |
| PCT/JP2001/003164 WO2001080313A1 (fr) | 2000-04-14 | 2001-04-12 | Materiau de plaque de dissipation thermique sur laquelle est monte un semi-conducteur, procede de fabrication et boitier ceramique obtenu |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE306119T1 true ATE306119T1 (de) | 2005-10-15 |
Family
ID=26590109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01919912T ATE306119T1 (de) | 2000-04-14 | 2001-04-12 | Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben |
Country Status (4)
| Country | Link |
|---|---|
| EP (2) | EP1231633B1 (de) |
| AT (1) | ATE306119T1 (de) |
| DE (1) | DE60113797T2 (de) |
| WO (1) | WO2001080313A1 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005046404B4 (de) | 2005-09-28 | 2008-12-24 | Infineon Technologies Ag | Verfahren zur Minderung von Streuungen in der Durchbiegung von gewalzten Bodenplatten und Leistungshalbleitermodul mit einer nach diesem Verfahren hergestellten Bodenplatte |
| EP1985718A4 (de) * | 2006-02-15 | 2009-09-16 | Jfe Prec Corp | Cr-Cu-LEGIERUNG, HERSTELLUNGSVERFAHREN DAFÜR, KÜHLKÖRPER FÜR EINEN HALBLEITER SOWIE WÄRMEABLEITKOMPONENTE FÜR EINEN HALBLEITER |
| US20090035632A1 (en) * | 2007-07-31 | 2009-02-05 | Kirkwood Brad L | Solid oxide fuel cell electrode systems and methods |
| KR101679104B1 (ko) * | 2009-10-01 | 2016-11-23 | 제이에프이 세이미츠 가부시키가이샤 | 전자 기기용 히트 싱크 및 그의 제조 프로세스 |
| CN102489508A (zh) * | 2011-12-06 | 2012-06-13 | 无锡乐普金属科技有限公司 | 钼铜合金箔片的交叉轧制方法 |
| CN102601116A (zh) * | 2012-03-19 | 2012-07-25 | 长沙升华微电子材料有限公司 | 一种铜基电子封装材料的制备方法 |
| CN103143714B (zh) * | 2013-03-29 | 2015-01-14 | 西北有色金属研究院 | 一种Cu/MoCu/Cu三层复合板坯的制备方法 |
| JP5818045B1 (ja) * | 2014-12-05 | 2015-11-18 | 株式会社半導体熱研究所 | 放熱基板と、それを使用した半導体パッケージと半導体モジュール |
| JP6455896B1 (ja) * | 2017-11-18 | 2019-01-23 | Jfe精密株式会社 | 放熱板及びその製造方法 |
| WO2019180914A1 (ja) * | 2018-03-23 | 2019-09-26 | 三菱マテリアル株式会社 | 電子部品実装モジュール |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3426916A1 (de) * | 1984-07-21 | 1986-01-23 | Vacuumschmelze Gmbh, 6450 Hanau | Verfahren zur herstellung eines verbundwerkstoffes |
| JP2746279B2 (ja) * | 1990-06-18 | 1998-05-06 | 日本タングステン 株式会社 | 半導体装置用基板材料及びその製造方法 |
| US5493153A (en) * | 1992-11-26 | 1996-02-20 | Tokyo Tungsten Co., Ltd. | Plastic-packaged semiconductor device having a heat sink matched with a plastic package |
| JPH0892667A (ja) * | 1994-09-22 | 1996-04-09 | Tokyo Tungsten Co Ltd | 金属複合材料及びその製造方法 |
| JP3482580B2 (ja) * | 1995-11-28 | 2003-12-22 | 株式会社アライドマテリアル | 高放熱性金属複合板材及びそれを用いた高放熱性金属基板 |
| JP3548991B2 (ja) * | 1997-08-22 | 2004-08-04 | 株式会社アライドマテリアル | 放熱基板及びその製造方法 |
| JP2000026926A (ja) * | 1998-07-08 | 2000-01-25 | Tokyo Tungsten Co Ltd | リードフレーム用複合材とそれを用いた半導体パッケージ |
-
2001
- 2001-04-12 AT AT01919912T patent/ATE306119T1/de not_active IP Right Cessation
- 2001-04-12 EP EP01919912A patent/EP1231633B1/de not_active Expired - Lifetime
- 2001-04-12 WO PCT/JP2001/003164 patent/WO2001080313A1/ja not_active Ceased
- 2001-04-12 EP EP05002607A patent/EP1553627A1/de not_active Ceased
- 2001-04-12 DE DE60113797T patent/DE60113797T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1231633A1 (de) | 2002-08-14 |
| EP1231633A4 (de) | 2003-05-28 |
| WO2001080313A1 (fr) | 2001-10-25 |
| DE60113797T2 (de) | 2006-06-08 |
| EP1231633B1 (de) | 2005-10-05 |
| DE60113797D1 (de) | 2006-02-16 |
| EP1553627A1 (de) | 2005-07-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |
Ref document number: 1231633 Country of ref document: EP |
|
| REN | Ceased due to non-payment of the annual fee |