ATE310715T1 - Substrat aus spinel für das heteroepitaktische wachstum von iii-v materialen - Google Patents

Substrat aus spinel für das heteroepitaktische wachstum von iii-v materialen

Info

Publication number
ATE310715T1
ATE310715T1 AT03728328T AT03728328T ATE310715T1 AT E310715 T1 ATE310715 T1 AT E310715T1 AT 03728328 T AT03728328 T AT 03728328T AT 03728328 T AT03728328 T AT 03728328T AT E310715 T1 ATE310715 T1 AT E310715T1
Authority
AT
Austria
Prior art keywords
iii
spinel
less
layer
alpha
Prior art date
Application number
AT03728328T
Other languages
English (en)
Inventor
Milan R Kokta
Hung T Ong
Original Assignee
Saint Gobain Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics filed Critical Saint Gobain Ceramics
Application granted granted Critical
Publication of ATE310715T1 publication Critical patent/ATE310715T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12063—Nonparticulate metal component
    • Y10T428/12069—Plural nonparticulate metal components
    • Y10T428/12076—Next to each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/1266—O, S, or organic compound in metal component
    • Y10T428/12667—Oxide of transition metal or Al

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT03728328T 2002-04-03 2003-03-31 Substrat aus spinel für das heteroepitaktische wachstum von iii-v materialen ATE310715T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/115,719 US6844084B2 (en) 2002-04-03 2002-04-03 Spinel substrate and heteroepitaxial growth of III-V materials thereon
PCT/US2003/010147 WO2003084886A1 (en) 2002-04-03 2003-03-31 Spinel substrate and heteroepitaxial growth of iii-v materials thereon

Publications (1)

Publication Number Publication Date
ATE310715T1 true ATE310715T1 (de) 2005-12-15

Family

ID=28673823

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03728328T ATE310715T1 (de) 2002-04-03 2003-03-31 Substrat aus spinel für das heteroepitaktische wachstum von iii-v materialen

Country Status (11)

Country Link
US (1) US6844084B2 (de)
EP (1) EP1490307B1 (de)
JP (1) JP4629341B2 (de)
KR (1) KR100655106B1 (de)
CN (1) CN1323963C (de)
AT (1) ATE310715T1 (de)
AU (1) AU2003233477A1 (de)
CA (1) CA2480117C (de)
DE (1) DE60302446T2 (de)
TW (1) TWI303675B (de)
WO (1) WO2003084886A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
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US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
WO2005031047A1 (en) * 2003-09-23 2005-04-07 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
RU2414550C1 (ru) * 2006-12-28 2011-03-20 Сэнт-Гобэн Керамикс Энд Пластикс, Инк. Сапфировая подложка (варианты)
EP2030958B1 (de) * 2007-08-27 2013-04-10 Rohm and Haas Electronic Materials LLC Verfahren zur Herstellung von polykristallinen, monolithischen Magnesiumaluminatspinellen
US8143582B2 (en) * 2008-05-15 2012-03-27 Saint-Gobain Ceramics & Plastics, Inc. Scintillator device
US8217356B2 (en) * 2008-08-11 2012-07-10 Saint-Gobain Ceramics & Plastics, Inc. Radiation detector including elongated elements
CN101710182A (zh) * 2008-09-19 2010-05-19 圣戈本陶瓷及塑料股份有限公司 形成闪烁设备的方法
US8575471B2 (en) * 2009-08-31 2013-11-05 Alliance For Sustainable Energy, Llc Lattice matched semiconductor growth on crystalline metallic substrates
US8961687B2 (en) * 2009-08-31 2015-02-24 Alliance For Sustainable Energy, Llc Lattice matched crystalline substrates for cubic nitride semiconductor growth
US10115859B2 (en) * 2009-12-15 2018-10-30 Lehigh University Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer
US8507365B2 (en) * 2009-12-21 2013-08-13 Alliance For Sustainable Energy, Llc Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates
WO2012074523A1 (en) 2010-12-01 2012-06-07 Alliance For Sustainable Energy, Llc Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
US9425249B2 (en) 2010-12-01 2016-08-23 Alliance For Sustainable Energy, Llc Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
HUE060093T2 (hu) 2012-03-15 2023-01-28 Boehringer Ingelheim Vetmedica Gmbh Gyógyszerészeti tablettakészítmény az állatgyógyászati ágazat számára, eljárás annak elõállítására és annak alkalmazása
CN104005088B (zh) * 2014-06-13 2017-06-13 中国科学院合肥物质科学研究院 过渡族金属离子掺杂的镁铝尖晶石晶体的提拉法生长方法
CN112876042B (zh) * 2021-02-24 2022-08-30 彩虹（合肥）液晶玻璃有限公司 一种在线监测成型牵引辊浮动的装置及监测方法
CN115504513B (zh) * 2022-10-20 2023-08-15 北京化工大学 一种异质结结构的多孔钙铁@镁铁复合尖晶石的制备方法及应用

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FR1597033A (de) 1968-06-19 1970-06-22
DE1769635A1 (de) * 1968-06-20 1972-03-30 Siemens Ag Duenne Halbleiter-Aufwachsschicht auf tonerdearmen,tiegelgezogenem Magnesium-Aluminium-Spinell-Einkristall,sowie Verfahren zur Herstellung der Schicht und zur Herstellung der Einkristalle
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
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Also Published As

Publication number Publication date
CA2480117C (en) 2007-11-20
KR20040097261A (ko) 2004-11-17
DE60302446T2 (de) 2006-08-17
AU2003233477A1 (en) 2003-10-20
TW200402484A (en) 2004-02-16
US6844084B2 (en) 2005-01-18
KR100655106B1 (ko) 2006-12-21
EP1490307A1 (de) 2004-12-29
CN1646436A (zh) 2005-07-27
CA2480117A1 (en) 2003-10-16
EP1490307B1 (de) 2005-11-23
JP4629341B2 (ja) 2011-02-09
DE60302446D1 (de) 2005-12-29
CN1323963C (zh) 2007-07-04
WO2003084886A1 (en) 2003-10-16
JP2005521627A (ja) 2005-07-21
TWI303675B (en) 2008-12-01
US20030188678A1 (en) 2003-10-09

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