ATE315245T1 - Strahlungsempfindliche harzzusammensetzung - Google Patents

Strahlungsempfindliche harzzusammensetzung

Info

Publication number
ATE315245T1
ATE315245T1 AT00120000T AT00120000T ATE315245T1 AT E315245 T1 ATE315245 T1 AT E315245T1 AT 00120000 T AT00120000 T AT 00120000T AT 00120000 T AT00120000 T AT 00120000T AT E315245 T1 ATE315245 T1 AT E315245T1
Authority
AT
Austria
Prior art keywords
radiation
resin composition
sensitive resin
exhibiting
iii
Prior art date
Application number
AT00120000T
Other languages
English (en)
Inventor
Katsuji Douki
Kiyoshi Murata
Hiroyuki Ishii
Toru Kajita
Tsutomu Shimokawa
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP29129199A external-priority patent/JP4123654B2/ja
Application filed by Jsr Corp filed Critical Jsr Corp
Application granted granted Critical
Publication of ATE315245T1 publication Critical patent/ATE315245T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
AT00120000T 1999-09-17 2000-09-14 Strahlungsempfindliche harzzusammensetzung ATE315245T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP26411099 1999-09-17
JP29129199A JP4123654B2 (ja) 1999-10-13 1999-10-13 感放射線性樹脂組成物
JP32522299 1999-11-16

Publications (1)

Publication Number Publication Date
ATE315245T1 true ATE315245T1 (de) 2006-02-15

Family

ID=27335274

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00120000T ATE315245T1 (de) 1999-09-17 2000-09-14 Strahlungsempfindliche harzzusammensetzung

Country Status (8)

Country Link
US (1) US6482568B1 (de)
EP (1) EP1085379B1 (de)
KR (1) KR100684220B1 (de)
AT (1) ATE315245T1 (de)
DE (1) DE60025297T2 (de)
IL (1) IL138518A0 (de)
SG (1) SG125883A1 (de)
TW (1) TWI272453B (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382960B1 (ko) * 1998-07-03 2003-05-09 닛뽕덴끼 가부시끼가이샤 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
JP4061801B2 (ja) 2000-01-24 2008-03-19 住友化学株式会社 化学増幅型ポジ型レジスト組成物
WO2001055789A2 (en) * 2000-01-25 2001-08-02 Infineon Technologies Ag Chemically amplified short wavelength resist
US6623907B2 (en) 2000-02-04 2003-09-23 Jsr Corporation Radiation-sensitive resin composition
US6777157B1 (en) * 2000-02-26 2004-08-17 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising same
JP4370668B2 (ja) * 2000-03-29 2009-11-25 Ｊｓｒ株式会社 メッキ造形物製造用ポジ型感放射線性樹脂組成物およびメッキ造形物の製造方法
JP2001281874A (ja) * 2000-03-31 2001-10-10 Tokyo Ohka Kogyo Co Ltd リソグラフィー用反射防止膜形成用組成物およびこれを用いたレジスト積層体
KR100518993B1 (ko) * 2000-04-27 2005-10-06 신에쓰 가가꾸 고교 가부시끼가이샤 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법
JP2002072477A (ja) * 2000-06-12 2002-03-12 Jsr Corp 感放射線性樹脂組成物
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6696216B2 (en) * 2001-06-29 2004-02-24 International Business Machines Corporation Thiophene-containing photo acid generators for photolithography
US7192681B2 (en) 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
KR100784672B1 (ko) 2001-08-20 2007-12-12 주식회사 동진쎄미켐 감광성 수지 조성물
TW200403522A (en) * 2002-03-01 2004-03-01 Shipley Co Llc Photoresist compositions
US7531286B2 (en) * 2002-03-15 2009-05-12 Jsr Corporation Radiation-sensitive resin composition
JP4048824B2 (ja) * 2002-05-09 2008-02-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
JP3937996B2 (ja) * 2002-10-08 2007-06-27 Ｊｓｒ株式会社 感放射性樹脂組成物
DE60334249D1 (de) * 2002-11-05 2010-10-28 Jsr Corp Acrylcopolymer und strahlungsempfindliche harzzusammensetzung
JP4140506B2 (ja) * 2003-10-28 2008-08-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
DE10358081A1 (de) * 2003-12-10 2005-07-21 Basf Ag α-(1'-Hydroxyalkyl)acrylate enthaltende Beschichtungsmassen
US7147985B2 (en) * 2004-03-31 2006-12-12 Intel Corporation Resist compounds including acid labile groups having hydrophilic groups attached thereto
JP4657899B2 (ja) * 2005-11-30 2011-03-23 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
WO2010007971A1 (ja) * 2008-07-14 2010-01-21 Jsr株式会社 感放射線性樹脂組成物
US20120122031A1 (en) * 2010-11-15 2012-05-17 International Business Machines Corporation Photoresist composition for negative development and pattern forming method using thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100261022B1 (ko) 1996-10-11 2000-09-01 윤종용 화학증폭형 레지스트 조성물
KR100245410B1 (ko) 1997-12-02 2000-03-02 윤종용 감광성 폴리머 및 그것을 이용한 화학증폭형 레지스트 조성물
EP0930541A1 (de) 1998-01-16 1999-07-21 JSR Corporation Strahlungsempfindliche Harzzusammensetzung
JP3738562B2 (ja) * 1998-02-19 2006-01-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4131062B2 (ja) * 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
US6312867B1 (en) * 1998-11-02 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ester compounds, polymers, resist compositions and patterning process
US6403280B1 (en) 1999-04-28 2002-06-11 Jsr Corporation Radiation sensitive resin composition

Also Published As

Publication number Publication date
DE60025297T2 (de) 2006-08-17
KR20010050495A (ko) 2001-06-15
TWI272453B (en) 2007-02-01
EP1085379B1 (de) 2006-01-04
US6482568B1 (en) 2002-11-19
EP1085379A1 (de) 2001-03-21
SG125883A1 (en) 2006-10-30
DE60025297D1 (de) 2006-03-30
IL138518A0 (en) 2001-10-31
KR100684220B1 (ko) 2007-02-28

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