ATE316841T1 - Laserbearbeitung von halbleitermaterialen - Google Patents

Laserbearbeitung von halbleitermaterialen

Info

Publication number
ATE316841T1
ATE316841T1 AT01978769T AT01978769T ATE316841T1 AT E316841 T1 ATE316841 T1 AT E316841T1 AT 01978769 T AT01978769 T AT 01978769T AT 01978769 T AT01978769 T AT 01978769T AT E316841 T1 ATE316841 T1 AT E316841T1
Authority
AT
Austria
Prior art keywords
laser processing
semiconductor materials
cut
directing
edges
Prior art date
Application number
AT01978769T
Other languages
English (en)
Inventor
Adrian Boyle
Original Assignee
Xsil Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xsil Technology Ltd filed Critical Xsil Technology Ltd
Application granted granted Critical
Publication of ATE316841T1 publication Critical patent/ATE316841T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
AT01978769T 2000-12-15 2001-10-26 Laserbearbeitung von halbleitermaterialen ATE316841T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IE20001021 2000-12-15
EP01650016 2001-02-09

Publications (1)

Publication Number Publication Date
ATE316841T1 true ATE316841T1 (de) 2006-02-15

Family

ID=26077326

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01978769T ATE316841T1 (de) 2000-12-15 2001-10-26 Laserbearbeitung von halbleitermaterialen

Country Status (10)

Country Link
US (1) US6841482B2 (de)
EP (1) EP1341638B1 (de)
JP (1) JP2004515365A (de)
KR (1) KR20030064808A (de)
CN (1) CN1257038C (de)
AT (1) ATE316841T1 (de)
AU (1) AU2002210860A1 (de)
DE (1) DE60117036T2 (de)
IE (1) IE20010944A1 (de)
WO (1) WO2002047863A1 (de)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100701013B1 (ko) * 2001-05-21 2007-03-29 삼성전자주식회사 레이저 빔을 이용한 비금속 기판의 절단방법 및 장치
US7357486B2 (en) 2001-12-20 2008-04-15 Hewlett-Packard Development Company, L.P. Method of laser machining a fluid slot
US20030155328A1 (en) * 2002-02-15 2003-08-21 Huth Mark C. Laser micromachining and methods and systems of same
DE10210040C1 (de) * 2002-03-07 2003-10-30 Siemens Ag Betriebsverfahren und Transportwagen für eine Laserbearbeitungsanlage
US6969822B2 (en) 2003-05-13 2005-11-29 Hewlett-Packard Development Company, L.P. Laser micromachining systems
US7754999B2 (en) 2003-05-13 2010-07-13 Hewlett-Packard Development Company, L.P. Laser micromachining and methods of same
US7629234B2 (en) * 2004-06-18 2009-12-08 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US8383982B2 (en) * 2004-06-18 2013-02-26 Electro Scientific Industries, Inc. Methods and systems for semiconductor structure processing using multiple laser beam spots
US7425471B2 (en) * 2004-06-18 2008-09-16 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
US7435927B2 (en) 2004-06-18 2008-10-14 Electron Scientific Industries, Inc. Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
US8148211B2 (en) * 2004-06-18 2012-04-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US7687740B2 (en) * 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7633034B2 (en) * 2004-06-18 2009-12-15 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US7935941B2 (en) * 2004-06-18 2011-05-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US7923658B2 (en) * 2004-09-13 2011-04-12 Hewlett-Packard Development Company, L.P. Laser micromachining methods and systems
US9034731B2 (en) * 2005-02-03 2015-05-19 Stats Chippac Ltd. Integrated, integrated circuit singulation system
NL1028588C2 (nl) * 2005-03-22 2006-09-25 Fico Bv Werkwijze en inrichting voor het separeren van producten met een gecontroleerde snederand en gesepareerd product.
JP4751634B2 (ja) * 2005-03-31 2011-08-17 富士通セミコンダクター株式会社 半導体装置の製造方法
US7611966B2 (en) * 2005-05-05 2009-11-03 Intel Corporation Dual pulsed beam laser micromachining method
US7687417B2 (en) * 2005-11-16 2010-03-30 E.I. Du Pont De Nemours And Company Lead free glass(es), thick film paste(s), tape composition(s) and low temperature cofired ceramic devices made therefrom
CN101447399A (zh) * 2006-04-14 2009-06-03 台湾积体电路制造股份有限公司 集成电路设计系统
US8168514B2 (en) * 2006-08-24 2012-05-01 Corning Incorporated Laser separation of thin laminated glass substrates for flexible display applications
US8053279B2 (en) * 2007-06-19 2011-11-08 Micron Technology, Inc. Methods and systems for imaging and cutting semiconductor wafers and other semiconductor workpieces
CN101610870B (zh) * 2007-10-16 2013-09-11 三星钻石工业股份有限公司 脆性材料基板的u形槽加工方法以及使用该方法的去除加工方法、打孔加工方法和倒角方法
SG152090A1 (en) * 2007-10-23 2009-05-29 Hypertronics Pte Ltd Scan head calibration system and method
KR20090123280A (ko) * 2008-05-27 2009-12-02 삼성전자주식회사 반도체 칩 패키지의 제조 방법, 반도체 웨이퍼 및 그 절단방법
US8168265B2 (en) 2008-06-06 2012-05-01 Applied Materials, Inc. Method for manufacturing electrochromic devices
KR101107859B1 (ko) * 2008-09-12 2012-01-31 오므론 가부시키가이샤 할단용 스크라이브선의 형성 방법 및 장치
US8426250B2 (en) * 2008-10-22 2013-04-23 Intel Corporation Laser-assisted chemical singulation of a wafer
US20100129984A1 (en) * 2008-11-26 2010-05-27 George Vakanas Wafer singulation in high volume manufacturing
US7710671B1 (en) * 2008-12-12 2010-05-04 Applied Materials, Inc. Laminated electrically tintable windows
US8383984B2 (en) * 2010-04-02 2013-02-26 Electro Scientific Industries, Inc. Method and apparatus for laser singulation of brittle materials
CN102479885B (zh) * 2010-11-22 2013-08-07 威控自动化机械股份有限公司 半导体元件的制造方法
US9732196B2 (en) 2011-05-10 2017-08-15 Sabic Global Technologies B.V. Adhesive for bonding polyimide resins
TWI493611B (zh) * 2011-05-11 2015-07-21 隆達電子股份有限公司 雷射切割的方法
CN105789680B (zh) 2011-08-08 2019-05-28 应用材料公司 具有用于激光图案化的集成光热阻挡层的薄膜结构和装置
US8361828B1 (en) * 2011-08-31 2013-01-29 Alta Devices, Inc. Aligned frontside backside laser dicing of semiconductor films
US8399281B1 (en) * 2011-08-31 2013-03-19 Alta Devices, Inc. Two beam backside laser dicing of semiconductor films
CN102751400B (zh) * 2012-07-18 2016-02-10 合肥彩虹蓝光科技有限公司 一种含金属背镀的半导体原件的切割方法
CN102941413B (zh) * 2012-11-23 2015-07-01 武汉钢铁(集团)公司 一种取向硅钢多次激光刻槽降低铁损的方法
US10286487B2 (en) 2013-02-28 2019-05-14 Ipg Photonics Corporation Laser system and method for processing sapphire
US9764427B2 (en) 2014-02-28 2017-09-19 Ipg Photonics Corporation Multi-laser system and method for cutting and post-cut processing hard dielectric materials
US9956646B2 (en) 2014-02-28 2018-05-01 Ipg Photonics Corporation Multiple-beam laser processing using multiple laser beams with distinct wavelengths and/or pulse durations
US10343237B2 (en) 2014-02-28 2019-07-09 Ipg Photonics Corporation System and method for laser beveling and/or polishing
CN107148324A (zh) * 2014-08-28 2017-09-08 Ipg光子公司 用于切割和切割后加工硬质电介质材料的多激光器系统和方法
WO2016033494A1 (en) 2014-08-28 2016-03-03 Ipg Photonics Corporation System and method for laser beveling and/or polishing
WO2017034807A1 (en) 2015-08-26 2017-03-02 Electro Scientific Industries, Inc. Laser scan sequencing and direction with respect to gas flow
CN110860799A (zh) * 2018-08-07 2020-03-06 大族激光科技产业集团股份有限公司 一种激光切割方法及激光切割系统
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
KR102366283B1 (ko) * 2020-06-22 2022-02-23 주식회사 네패스 반도체 패키지 및 그 제조 방법, 및 반도체 패키지 제조용 레이저 컷팅 장치
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
CN111805077B (zh) * 2020-08-24 2022-02-01 松山湖材料实验室 一种晶圆微结构的制造方法
CN112404745A (zh) * 2020-11-02 2021-02-26 中国航空工业集团公司北京长城航空测控技术研究所 一种薄片晶体器件切割面的超快激光平整方法
US20240222127A1 (en) * 2022-12-29 2024-07-04 Hua Hsu Silicon Materials Co., Ltd. Method for wafer treatment

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7609815A (nl) * 1976-09-03 1978-03-07 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4958900A (en) * 1989-03-27 1990-09-25 General Electric Company Multi-fiber holder for output coupler and methods using same
US5214261A (en) * 1990-09-10 1993-05-25 Rockwell International Corporation Method and apparatus for dicing semiconductor substrates using an excimer laser beam
JPH0824104B2 (ja) * 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
EP0656241B1 (de) * 1993-06-04 1998-12-23 Seiko Epson Corporation Vorrichtung und verfahren zum laserbearbeiten
US5611946A (en) * 1994-02-18 1997-03-18 New Wave Research Multi-wavelength laser system, probe station and laser cutter system using the same
KR970008386A (ko) * 1995-07-07 1997-02-24 하라 세이지 기판의 할단(割斷)방법 및 그 할단장치
WO1997029509A1 (en) * 1996-02-09 1997-08-14 Philips Electronics N.V. Laser separation of semiconductor elements formed in a wafer of semiconductor material
JPH1027971A (ja) * 1996-07-10 1998-01-27 Nec Corp 有機薄膜多層配線基板の切断方法
US5998759A (en) * 1996-12-24 1999-12-07 General Scanning, Inc. Laser processing
US6509548B1 (en) * 2000-10-04 2003-01-21 Igor Troitski Method and laser system for production of high-resolution laser-induced damage images inside transparent materials by generating small etch points

Also Published As

Publication number Publication date
US6841482B2 (en) 2005-01-11
DE60117036T2 (de) 2006-08-03
WO2002047863A1 (en) 2002-06-20
US20020086544A1 (en) 2002-07-04
JP2004515365A (ja) 2004-05-27
EP1341638B1 (de) 2006-02-01
IE20010944A1 (en) 2002-08-21
CN1481290A (zh) 2004-03-10
KR20030064808A (ko) 2003-08-02
EP1341638A1 (de) 2003-09-10
DE60117036D1 (de) 2006-04-13
CN1257038C (zh) 2006-05-24
AU2002210860A1 (en) 2002-06-24

Similar Documents

Publication Publication Date Title
DE60117036D1 (de) Laserbearbeitung von halbleitermaterialen
ATE363357T1 (de) Werkzeug zur feinstbearbeitung von oberflächen
DE60124938D1 (de) Steueurung von laserbearbeitung
SE0004273L (sv) Kompoundskär för metallbearbetning och sätt att tillverka desamma
SE8402037L (sv) Forfarande och anordning for att vid sagning minska sonderflekningen av tre och liknande material
MX2007003742A (es) Metodo de trazado para materiales fragiles y aparato de trazado.
DK0735019T3 (da) Retrovirale proteaseinhibitorer
ITFI20020207A1 (it) Gruppo di affilatura e macchina troncatrice comprendente almeno una lama e detto gruppo di affilatura
DE59500656D1 (de) Reibahle
DE60308920D1 (de) Baumscheren
DE69018940D1 (de) Laser, angeregt durch hf-entladung.
ATE217232T1 (de) Verfahren zum schneiden von y-fasen
DE50009260D1 (de) Sägeblatt mit abgeschrägten Schneidzähnen
NO20042351D0 (no) Roterbart drevet kutteblad
DE69105690D1 (de) Tragbares Schneidewerkzeug.
IT1305031B1 (it) Utensile discoidale di taglio, suo metodo di affilatura e macchinatroncatrice utilizzante detto utensile
IT1301729B1 (it) Processo per il drogaggio selettivo di una fetta di materialesemiconduttore mediante impiantazione ionica.
DE59803146D1 (de) Maschine zum bearbeiten von werkstücken mit schneidzähnen, insbes. von sägeblättern
ITFI930012A0 (it) Macchina per il taglio di marmi, graniti e pietre similari dotata di lame diamantate.
KR970025851U (ko) 웨이퍼 절단용 톱날
SE9902190L (sv) Förfarande för framställning av en fältemissionskatod, en fältemissionskatod och en ljuskälla
KR950000682U (ko) 예취기용 동력절단톱
SE9002836L (sv) Saagblad
TR199901404U (xx) Kanal açmalı çift yönlü bilenmiş budama testeresi.
ITMI20001018A0 (it) Macchina sezionatrice, bordatrice e rifilatrice per pannelli, in particolare per l'industria della lavorazione del legno.

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 1341638

Country of ref document: EP

REN Ceased due to non-payment of the annual fee