ATE317304T1 - Verfahren und vorrichtung zum zweidimensionalen aufbau von partikeln - Google Patents

Verfahren und vorrichtung zum zweidimensionalen aufbau von partikeln

Info

Publication number
ATE317304T1
ATE317304T1 AT03722143T AT03722143T ATE317304T1 AT E317304 T1 ATE317304 T1 AT E317304T1 AT 03722143 T AT03722143 T AT 03722143T AT 03722143 T AT03722143 T AT 03722143T AT E317304 T1 ATE317304 T1 AT E317304T1
Authority
AT
Austria
Prior art keywords
particles
dimensional construction
ramp
piled
dam
Prior art date
Application number
AT03722143T
Other languages
English (en)
Inventor
Gilles Picard
Juan Schneider
Original Assignee
Nanometrix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanometrix Inc filed Critical Nanometrix Inc
Application granted granted Critical
Publication of ATE317304T1 publication Critical patent/ATE317304T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/842—Coating a support with a liquid magnetic dispersion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C19/00—Apparatus specially adapted for applying particulate materials to surfaces
    • B05C19/04—Apparatus specially adapted for applying particulate materials to surfaces the particulate material being projected, poured or allowed to flow onto the surface of the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/12—Composite membranes; Ultra-thin membranes
    • B01D69/122—Separate manufacturing of ultra-thin membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B05D1/204—LB techniques
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B05D1/206—LB troughs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2252/00—Sheets
    • B05D2252/02—Sheets of indefinite length
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H10W70/666—Organic materials or pastes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Manufacturing Of Micro-Capsules (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Fire-Extinguishing Compositions (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
AT03722143T 2002-05-10 2003-05-12 Verfahren und vorrichtung zum zweidimensionalen aufbau von partikeln ATE317304T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA002385911A CA2385911A1 (en) 2002-05-10 2002-05-10 Method and apparatus for two dimensional assembly of particles

Publications (1)

Publication Number Publication Date
ATE317304T1 true ATE317304T1 (de) 2006-02-15

Family

ID=29410107

Family Applications (2)

Application Number Title Priority Date Filing Date
AT03722143T ATE317304T1 (de) 2002-05-10 2003-05-12 Verfahren und vorrichtung zum zweidimensionalen aufbau von partikeln
AT05090326T ATE481183T1 (de) 2002-05-10 2003-05-12 Vorrichtung zum zweidimensionalen aufbau von partikeln

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT05090326T ATE481183T1 (de) 2002-05-10 2003-05-12 Vorrichtung zum zweidimensionalen aufbau von partikeln

Country Status (10)

Country Link
EP (2) EP1503870B1 (de)
JP (1) JP2005525230A (de)
KR (1) KR100997548B1 (de)
CN (1) CN1652881A (de)
AT (2) ATE317304T1 (de)
AU (1) AU2003229443A1 (de)
CA (2) CA2385911A1 (de)
DE (2) DE60303509T8 (de)
MX (1) MXPA04011172A (de)
WO (1) WO2003095108A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2971956B1 (fr) 2011-02-24 2013-03-29 Commissariat Energie Atomique Installation et procede pour le depot d'un film de particules ordonnees sur un substrat en defilement
FR2977810A1 (fr) * 2011-07-13 2013-01-18 Commissariat Energie Atomique Installation et procede pour le depot d'un film de particules ordonnees, de largeur reglable, sur un substrat en defilement
FR2986721B1 (fr) * 2012-02-10 2014-06-27 Commissariat Energie Atomique Procede de depot d'un film de particules sur un substrat via un convoyeur liquide, comprenant une etape de structuration du film sur le substrat
FR2986722B1 (fr) * 2012-02-10 2014-03-28 Commissariat Energie Atomique Procede de transfert d'objets sur un substrat a l'aide d'un film compact de particules, avec une etape de realisation de connecteurs sur les objets
FR2986720B1 (fr) 2012-02-10 2014-03-28 Commissariat Energie Atomique Procede de depot de particules sur un substrat, comprenant une etape de structuration d'un film de particules sur un convoyeur liquide
FR2995228B1 (fr) * 2012-09-10 2014-09-05 Commissariat Energie Atomique Procede de formation d'un film de particules sur liquide porteur, avec deplacement d'une rampe inclinee de compression des particules
WO2016113141A1 (de) * 2015-01-12 2016-07-21 Weidlich Helmut Vorrichtung zur führung von ladungsträgern und deren verwendung
KR20190003494A (ko) * 2016-03-14 2019-01-09 나노그란데 적산형 제조에 사용을 위한 입자들의 층들을 형성하기 위한 방법 및 장치
CN106226943B (zh) * 2016-10-11 2021-08-31 京东方科技集团股份有限公司 用于制造量子点显示器件的方法以及对应的量子点显示器件
CN106583107A (zh) * 2016-12-15 2017-04-26 苏州欣航微电子有限公司 一种铜箔胶带磁吸处理装置
WO2020233809A1 (en) * 2019-05-22 2020-11-26 Toyota Motor Europe Solution-based deposition method for preparing semiconducting thin films via dispersed particle self-assembly at a liquid-liquid interface
CN110538772B (zh) * 2019-10-21 2024-09-06 健民药业集团股份有限公司 一种模压滚切式水凝胶涂布机
DE102020122857B4 (de) 2020-09-01 2022-12-08 Leibniz-Institut für Photonische Technologien e.V. (Engl.Leibniz Institute of Photonic Technology) Verfahren zur Herstellung einer ultradünnen freistehenden 2D-Membran mit Poren sowie ihre anwendungsbezogene Modifikation und Verwendung der über dieses Verfahren hergestellten 2D-Membranen
TWI755286B (zh) * 2021-02-23 2022-02-11 歆熾電氣技術股份有限公司 塗佈方法
CN117960523B (zh) * 2022-10-24 2024-12-10 比亚迪股份有限公司 锂粉涂布装置
CN119427617A (zh) * 2023-08-03 2025-02-14 浙江大学 一种制备独立自支撑超薄氧化石墨烯复合膜生产设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04367720A (ja) * 1991-06-12 1992-12-21 Canon Inc 単分子膜又は単分子累積膜の形成方法及び形成装置
JP3262472B2 (ja) * 1994-04-22 2002-03-04 キヤノン株式会社 ラングミュアーブロジェット膜の製造装置
EP0881000B8 (de) * 1997-05-30 2003-03-12 Canon Kabushiki Kaisha Vorrichtung zur Herstellung Langmuir-Blodgett-Filmen
AU2001262656A1 (en) * 2000-05-24 2001-12-03 Nano World Projects Corporation Process for the preparation of monolayers of particles or molecules

Also Published As

Publication number Publication date
JP2005525230A (ja) 2005-08-25
KR20050020798A (ko) 2005-03-04
MXPA04011172A (es) 2005-08-15
CN1652881A (zh) 2005-08-10
EP1503870A1 (de) 2005-02-09
ATE481183T1 (de) 2010-10-15
EP1647334A1 (de) 2006-04-19
DE60303509T8 (de) 2007-02-01
DE60303509T2 (de) 2006-10-26
CA2385911A1 (en) 2003-11-10
CA2484653C (en) 2013-07-09
DE60334251D1 (de) 2010-10-28
EP1503870B1 (de) 2006-02-08
WO2003095108A1 (en) 2003-11-20
DE60303509D1 (de) 2006-04-20
EP1647334B1 (de) 2010-09-15
KR100997548B1 (ko) 2010-11-30
AU2003229443A1 (en) 2003-11-11
CA2484653A1 (en) 2003-11-20

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