ATE31843T1 - Metallhalbleiter-absetzung. - Google Patents
Metallhalbleiter-absetzung.Info
- Publication number
- ATE31843T1 ATE31843T1 AT84307712T AT84307712T ATE31843T1 AT E31843 T1 ATE31843 T1 AT E31843T1 AT 84307712 T AT84307712 T AT 84307712T AT 84307712 T AT84307712 T AT 84307712T AT E31843 T1 ATE31843 T1 AT E31843T1
- Authority
- AT
- Austria
- Prior art keywords
- metal semiconductor
- semiconductor deposition
- metal
- layer
- thickness
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/202—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials for lift-off processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB838331158A GB8331158D0 (en) | 1983-11-22 | 1983-11-22 | Metal/semiconductor deposition |
| EP84307712A EP0145272B1 (de) | 1983-11-22 | 1984-11-08 | Metallhalbleiter-Absetzung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE31843T1 true ATE31843T1 (de) | 1988-01-15 |
Family
ID=10552173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT84307712T ATE31843T1 (de) | 1983-11-22 | 1984-11-08 | Metallhalbleiter-absetzung. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4568411A (de) |
| EP (1) | EP0145272B1 (de) |
| JP (1) | JPS60167448A (de) |
| AT (1) | ATE31843T1 (de) |
| CA (1) | CA1219835A (de) |
| DE (1) | DE3468584D1 (de) |
| GB (1) | GB8331158D0 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4712291A (en) * | 1985-06-06 | 1987-12-15 | The United States Of America As Represented By The Secretary Of The Air Force | Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs |
| US4670297A (en) * | 1985-06-21 | 1987-06-02 | Raytheon Company | Evaporated thick metal and airbridge interconnects and method of manufacture |
| US4699811A (en) * | 1986-09-16 | 1987-10-13 | Macdermid, Incorporated | Chromium mask for electroless nickel or copper plating |
| US5132248A (en) * | 1988-05-31 | 1992-07-21 | The United States Of America As Represented By The United States Department Of Energy | Direct write with microelectronic circuit fabrication |
| US4853080A (en) * | 1988-12-14 | 1989-08-01 | Hewlett-Packard | Lift-off process for patterning shields in thin magnetic recording heads |
| HU221294B1 (en) * | 1989-07-07 | 2002-09-28 | Novartis Ag | Process for producing retarde compositions containing the active ingredient in a polymeric carrier |
| JPH06215329A (ja) * | 1992-11-18 | 1994-08-05 | Mitsumi Electric Co Ltd | 微細導電パターンの形成方法 |
| US5770350A (en) * | 1993-11-09 | 1998-06-23 | Lg Semicon Co. Ltd. | Method for forming pattern using multilayer resist |
| JP2000199968A (ja) * | 1999-01-06 | 2000-07-18 | Sony Corp | 多層レジスト構造およびこれを用いた3次元微細構造の作製方法 |
| US7892974B2 (en) | 2000-04-11 | 2011-02-22 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
| US20070036890A1 (en) * | 2005-08-12 | 2007-02-15 | Feng Zhong | Method of making a fuel cell component using a mask |
| US11948848B2 (en) * | 2019-02-12 | 2024-04-02 | Intel Corporation | Subtractive etch resolution implementing a functional thin metal resist |
| CN110379707B (zh) * | 2019-08-21 | 2024-05-28 | 无锡英菲感知技术有限公司 | 一种金属图形化的剥离结构及其制作方法 |
| JP6875480B2 (ja) * | 2019-09-27 | 2021-05-26 | マクセルホールディングス株式会社 | 蒸着マスク及びその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5370764A (en) * | 1976-12-07 | 1978-06-23 | Fujitsu Ltd | Electrode formation method by lift off method |
| IT1096042B (it) * | 1978-06-26 | 1985-08-17 | Cise Spa | Struttura di fotoresist particolarmente adatta per la deposizione fotolitografica di strisce metalliche parallele su un substrato di base e procedimento per la sua realizzazione |
| NL8004573A (nl) * | 1979-09-19 | 1981-03-23 | Gen Electric | Werkwijze voor het vervaardigen van samengestelde voorwerpen. |
| EP0031463B1 (de) * | 1979-12-26 | 1984-06-13 | International Business Machines Corporation | Verfahren zum musterförmigen Anbringen eines Materials auf einem Substrat und Verwendung dieses Verfahrens zur Herstellung einer gemusterten Maskenstruktur auf einem Halbleitersubstrat |
| JPS56147449A (en) * | 1980-04-18 | 1981-11-16 | Fujitsu Ltd | Pattern forming method |
| IT1226065B (it) * | 1987-10-29 | 1990-12-10 | Vittoria Spa Off | Carcassa orditale per pneumatici per cicli in genere ed in particolare per biciclette sportive e da corsa. |
-
1983
- 1983-11-22 GB GB838331158A patent/GB8331158D0/en active Pending
-
1984
- 1984-10-19 CA CA000465884A patent/CA1219835A/en not_active Expired
- 1984-11-08 DE DE8484307712T patent/DE3468584D1/de not_active Expired
- 1984-11-08 EP EP84307712A patent/EP0145272B1/de not_active Expired
- 1984-11-08 AT AT84307712T patent/ATE31843T1/de not_active IP Right Cessation
- 1984-11-16 JP JP59242181A patent/JPS60167448A/ja active Pending
- 1984-11-16 US US06/672,233 patent/US4568411A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60167448A (ja) | 1985-08-30 |
| DE3468584D1 (en) | 1988-02-11 |
| CA1219835A (en) | 1987-03-31 |
| EP0145272A2 (de) | 1985-06-19 |
| EP0145272B1 (de) | 1988-01-07 |
| EP0145272A3 (en) | 1985-07-31 |
| GB8331158D0 (en) | 1983-12-29 |
| US4568411A (en) | 1986-02-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3468584D1 (en) | Metal/semiconductor deposition | |
| GB1522580A (en) | Metallizing a substrate | |
| ATE50379T1 (de) | Verfahren zur herstellung koplanarer viellagenmetall-isolator-schichten auf einem substrat. | |
| GB1418278A (en) | Integrated circuit devices | |
| DE3670066D1 (de) | Organisch-inorganischer film, niedergeschlagen auf einem glassubstrat, eventuell beschichtet mit einer oder mehreren duennen metallischen schichten. | |
| ATE43028T1 (de) | Verfahren zum herstellen einer schichtstruktur. | |
| US4145459A (en) | Method of making a short gate field effect transistor | |
| ES2192690T3 (es) | Pieza con recubrimiento protector frente al desgaste. | |
| MY100030A (en) | Method of manufacturing a polishing element. | |
| DE3480628D1 (de) | Metallisierung eines keramischen substrates. | |
| GB1532349A (en) | Forming holes through dielectric material | |
| CA1268846C (en) | SEMICONDUCTOR LASER WITH MESA STRUCTURE | |
| FR2556244B1 (fr) | Dispositif de formation et de depot sur un substrat de couches monomoleculaires | |
| DE68917503D1 (de) | Epitaktische Ablagerung von dünnen Schichten. | |
| ATE147443T1 (de) | Verfahren für die behandlung einer oxidschicht | |
| EP0180091A3 (en) | Method of selectively depositing metal layers on a substrate | |
| FR2523480B1 (fr) | Procede de depot d'une couche de protection metallique et/ou ceramique sur un substrat | |
| EP0152164A3 (de) | Herstellung einer unter einem halben Mikrometer breiten Vertiefung in einem Halbleitersubstrat | |
| JPS5441681A (en) | Manufacture for high frequency transistor | |
| JPS5339074A (en) | Burying method of photoresist films | |
| JPS57188882A (en) | Formation of recess-type micro-multilayer gate electrode | |
| EP0100739A3 (de) | Akustische Oberflächenwellenanordnung und deren Herstellungsverfahren | |
| JPS5691434A (en) | Method for forming pattern of deposited film by lift-off method | |
| IT7824955A0 (it) | Struttura di fotoresistparticolarmente adatta per la deposizione fotolitografica di strisce metalliche parallele su un substrato di base e procedimento per la sua realizzazione. | |
| EP0387143A3 (de) | Elektrolytisches Niederschlagsverfahren auf ein Halbeitersubstrat |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification | ||
| REN | Ceased due to non-payment of the annual fee |