ATE319187T1 - Schutzvorrichtung gegen elektrostatische entladungen - Google Patents

Schutzvorrichtung gegen elektrostatische entladungen

Info

Publication number
ATE319187T1
ATE319187T1 AT03447134T AT03447134T ATE319187T1 AT E319187 T1 ATE319187 T1 AT E319187T1 AT 03447134 T AT03447134 T AT 03447134T AT 03447134 T AT03447134 T AT 03447134T AT E319187 T1 ATE319187 T1 AT E319187T1
Authority
AT
Austria
Prior art keywords
protective device
electrostatic discharge
device against
against electrostatic
resistors
Prior art date
Application number
AT03447134T
Other languages
English (en)
Inventor
Koen Reynders
Heyn Vincent De
Mahmud Zubeidat
Original Assignee
Imec Inter Uni Micro Electr
Ami Semiconductor Belgium Bvba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr, Ami Semiconductor Belgium Bvba filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE319187T1 publication Critical patent/ATE319187T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Emergency Protection Circuit Devices (AREA)
AT03447134T 2003-05-28 2003-05-28 Schutzvorrichtung gegen elektrostatische entladungen ATE319187T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03447134A EP1482554B1 (de) 2003-05-28 2003-05-28 Schutzvorrichtung gegen elektrostatische Entladungen

Publications (1)

Publication Number Publication Date
ATE319187T1 true ATE319187T1 (de) 2006-03-15

Family

ID=33104245

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03447134T ATE319187T1 (de) 2003-05-28 2003-05-28 Schutzvorrichtung gegen elektrostatische entladungen

Country Status (4)

Country Link
US (1) US7405914B2 (de)
EP (1) EP1482554B1 (de)
AT (1) ATE319187T1 (de)
DE (1) DE60303790T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2041791A1 (de) 2006-07-03 2009-04-01 Freescale Semiconductor, Inc. Vorrichtung zum schutz vor elektrostatischer entladung und verfahren dafür
US8686470B2 (en) 2011-01-07 2014-04-01 Nxp, B.V. ESD protection circuit
US8441031B2 (en) * 2011-01-28 2013-05-14 Nxp B.V. ESD protection device
US8766365B2 (en) * 2012-02-21 2014-07-01 Micron Technology, Inc. Circuit-protection devices
US9640988B2 (en) 2014-12-12 2017-05-02 Globalfoundries Inc. Comparative ESD power clamp
US10163893B1 (en) 2017-08-28 2018-12-25 Micron Technologies, Inc. Apparatus containing circuit-protection devices
US10431577B2 (en) 2017-12-29 2019-10-01 Micron Technology, Inc. Methods of forming circuit-protection devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE298715C (de)
GB1393748A (en) * 1972-06-28 1975-05-14 Ind Instr Ltd Voltage regulating circuits
DD298715A5 (de) * 1989-07-03 1992-03-05 Technische Hochschule Ilmenau,De Gategesteuertes mos-bipolar-leistungsbauelement
US5359211A (en) * 1991-07-18 1994-10-25 Harris Corporation High voltage protection using SCRs
GB2283622B (en) * 1993-11-03 1998-01-14 Plessey Semiconductors Ltd Overvoltage protection circuit
US5969923A (en) * 1997-07-15 1999-10-19 Sarnoff Corporation Electrostatic protection structure for MOS circuits
TW428253B (en) * 1998-04-20 2001-04-01 United Microelectronics Corp Buried channel vertical doubly-diffused metal oxide semiconductor device
FR2795557B1 (fr) * 1999-06-28 2001-09-21 St Microelectronics Sa Dispositif d'ajustement des circuits apres mise en boitier et procede de fabrication correspondant
US6577481B2 (en) * 2000-11-07 2003-06-10 Texas Instruments Incorporated Cascoded NPN electrostatic discharge protection circuit

Also Published As

Publication number Publication date
US20050002141A1 (en) 2005-01-06
EP1482554A1 (de) 2004-12-01
DE60303790T2 (de) 2006-11-30
EP1482554B1 (de) 2006-03-01
US7405914B2 (en) 2008-07-29
DE60303790D1 (de) 2006-04-27

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties