ATE322075T1 - Assoziativspeicherarchitektur mit geringem leistungsverbrauch - Google Patents

Assoziativspeicherarchitektur mit geringem leistungsverbrauch

Info

Publication number
ATE322075T1
ATE322075T1 AT02781031T AT02781031T ATE322075T1 AT E322075 T1 ATE322075 T1 AT E322075T1 AT 02781031 T AT02781031 T AT 02781031T AT 02781031 T AT02781031 T AT 02781031T AT E322075 T1 ATE322075 T1 AT E322075T1
Authority
AT
Austria
Prior art keywords
search
matchlines
main
matchline
sense
Prior art date
Application number
AT02781031T
Other languages
English (en)
Inventor
Jin-Ki Kim
Peter Vlasenko
Douglas Perry
Peter B Gillingham
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CA2384039A external-priority patent/CA2384039C/en
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Application granted granted Critical
Publication of ATE322075T1 publication Critical patent/ATE322075T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements

Landscapes

  • Dram (AREA)
  • Power Sources (AREA)
  • Static Random-Access Memory (AREA)
  • Television Systems (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
AT02781031T 2001-12-28 2002-12-05 Assoziativspeicherarchitektur mit geringem leistungsverbrauch ATE322075T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34275001P 2001-12-28 2001-12-28
CA2384039A CA2384039C (en) 2001-12-28 2002-04-30 Low power content addressable memory architecture

Publications (1)

Publication Number Publication Date
ATE322075T1 true ATE322075T1 (de) 2006-04-15

Family

ID=25682858

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02781031T ATE322075T1 (de) 2001-12-28 2002-12-05 Assoziativspeicherarchitektur mit geringem leistungsverbrauch

Country Status (7)

Country Link
EP (1) EP1461811B1 (de)
CN (1) CN100414646C (de)
AT (1) ATE322075T1 (de)
AU (1) AU2002349236A1 (de)
DE (1) DE60210322T2 (de)
TW (1) TWI260636B (de)
WO (1) WO2003056564A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9601199B2 (en) 2007-01-26 2017-03-21 Intel Corporation Iterator register for structured memory
CN101652758B (zh) * 2007-01-26 2013-10-16 海坎普系统股份有限公司 分级式不可变内容可寻址存储器处理器
CN101118780B (zh) * 2007-09-18 2010-09-08 钰创科技股份有限公司 一种具有感测放大器的闩锁器
TWI405206B (zh) * 2008-12-05 2013-08-11 Nat Univ Chung Cheng The low voltage content can be addressed by the memory of the read and compare circuit
CN103886901B (zh) * 2012-01-12 2017-11-21 大连市恒珑科技发展有限公司 log2型匹配线电路
US9384835B2 (en) 2012-05-29 2016-07-05 Globalfoundries Inc. Content addressable memory early-predict late-correct single ended sensing
KR101821532B1 (ko) 2012-07-12 2018-03-08 노키아 테크놀로지스 오와이 벡터 양자화
US8958226B2 (en) 2012-12-28 2015-02-17 Qualcomm Incorporated Static NAND cell for ternary content addressable memory (TCAM)
US8934278B2 (en) * 2012-12-28 2015-01-13 Qualcomm Incorporated Hybrid ternary content addressable memory
US9153305B2 (en) * 2013-08-30 2015-10-06 Micron Technology, Inc. Independently addressable memory array address spaces
JP6840621B2 (ja) * 2017-05-24 2021-03-10 ルネサスエレクトロニクス株式会社 内容参照メモリ
EP3832654B1 (de) * 2019-12-03 2023-05-17 MediaTek Singapore Pte. Ltd. Mehrstufige/mehrsegmentige inhaltsadressierbare speichervorrichtung mit niedrigem stromverbrauch
US11342022B2 (en) 2019-12-03 2022-05-24 Mediatek Singapore Pte. Ltd. Low-power multi-stage/multi-segment content addressable memory device
US12400715B2 (en) * 2023-09-12 2025-08-26 Macronix International Co., Ltd. Non-volatile 3D memory search architecture
TWI898308B (zh) * 2023-11-07 2025-09-21 瑞昱半導體股份有限公司 內容可定址記憶體與記憶體控制方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3190868B2 (ja) * 1997-11-21 2001-07-23 エヌイーシーマイクロシステム株式会社 連想メモリ装置
US6243280B1 (en) * 1999-09-09 2001-06-05 Netlogic Microsystems, Inc. Selective match line pre-charging in a partitioned content addressable memory array
US6191969B1 (en) * 1999-09-09 2001-02-20 Net Logic Microsystems, Inc. Selective match line discharging in a partitioned content addressable memory array

Also Published As

Publication number Publication date
DE60210322T2 (de) 2006-12-28
EP1461811A1 (de) 2004-09-29
EP1461811B1 (de) 2006-03-29
TW200301484A (en) 2003-07-01
CN100414646C (zh) 2008-08-27
WO2003056564A1 (en) 2003-07-10
CN1620701A (zh) 2005-05-25
AU2002349236A1 (en) 2003-07-15
DE60210322D1 (de) 2006-05-18
TWI260636B (en) 2006-08-21

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