ATE32240T1 - Sprudelzylinder und tauchrohrgefaess. - Google Patents
Sprudelzylinder und tauchrohrgefaess.Info
- Publication number
- ATE32240T1 ATE32240T1 AT83307136T AT83307136T ATE32240T1 AT E32240 T1 ATE32240 T1 AT E32240T1 AT 83307136 T AT83307136 T AT 83307136T AT 83307136 T AT83307136 T AT 83307136T AT E32240 T1 ATE32240 T1 AT E32240T1
- Authority
- AT
- Austria
- Prior art keywords
- liquid
- cylinder
- contamination
- dip tube
- diaphragm valves
- Prior art date
Links
- 230000005587 bubbling Effects 0.000 title 1
- 238000007654 immersion Methods 0.000 title 1
- 239000007788 liquid Substances 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000011109 contamination Methods 0.000 abstract 2
- 239000004809 Teflon Substances 0.000 abstract 1
- 229920006362 Teflon® Polymers 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 125000002524 organometallic group Chemical group 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/448,160 US4506815A (en) | 1982-12-09 | 1982-12-09 | Bubbler cylinder and dip tube device |
| EP83307136A EP0113518B1 (de) | 1982-12-09 | 1983-11-22 | Sprudelzylinder und Tauchrohrgefäss |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE32240T1 true ATE32240T1 (de) | 1988-02-15 |
Family
ID=23779241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT83307136T ATE32240T1 (de) | 1982-12-09 | 1983-11-22 | Sprudelzylinder und tauchrohrgefaess. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4506815A (de) |
| EP (1) | EP0113518B1 (de) |
| JP (1) | JPS59151699A (de) |
| AT (1) | ATE32240T1 (de) |
| CA (1) | CA1220768A (de) |
| DE (2) | DE3375494D1 (de) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3508543A1 (de) * | 1985-03-09 | 1986-09-18 | Merck Patent Gmbh, 6100 Darmstadt | Entnahmekopf fuer fluessigkeitsbehaelter |
| US4919304A (en) * | 1985-08-01 | 1990-04-24 | American Cyanamid Company | Bubbler cylinder device |
| ATE53078T1 (de) * | 1985-08-01 | 1990-06-15 | American Cyanamid Co | Sprudelzylindervorrichtung. |
| JPS6311598A (ja) * | 1986-07-03 | 1988-01-19 | Toyo Sutoufuaa Chem:Kk | 有機金属気相成長用シリンダ− |
| DE58901441D1 (de) * | 1988-02-11 | 1992-06-25 | Siemens Ag | Thermostatisierte anordnung zur sicheren und kontrollierten verdampfung von giftigen oder an der luft hochreaktiven fluessigen reaktionsmedien, vorzugsweise fuer niederdruckdampfabscheideanlagen in der halbleitertechnik. |
| JPH0269389A (ja) * | 1988-08-31 | 1990-03-08 | Toyo Stauffer Chem Co | 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法 |
| GB2223509B (en) * | 1988-10-04 | 1992-08-05 | Stc Plc | Vapour phase processing |
| EP0420596B1 (de) * | 1989-09-26 | 1996-06-19 | Canon Kabushiki Kaisha | Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage |
| CA2080817A1 (en) * | 1990-04-23 | 1991-10-24 | Stephen R. Horvath, Jr. | Precision-ratioed fluid-mixing device and system |
| US5199603A (en) * | 1991-11-26 | 1993-04-06 | Prescott Norman F | Delivery system for organometallic compounds |
| EP0555614A1 (de) * | 1992-02-13 | 1993-08-18 | International Business Machines Corporation | Organo-Metall-Gas Quelle für MOVPE- und MOMBE-Verfahren |
| GB9206552D0 (en) * | 1992-03-26 | 1992-05-06 | Epichem Ltd | Bubblers |
| IT1257434B (it) * | 1992-12-04 | 1996-01-17 | Cselt Centro Studi Lab Telecom | Generatore di vapori per impianti di deposizione chimica da fase vapore |
| EP1079001B1 (de) * | 1999-08-20 | 2005-06-15 | Morton International, Inc. | Sprudelvorrichtung mit zwei Fritten |
| RU2227903C2 (ru) * | 2001-12-06 | 2004-04-27 | Открытое акционерное общество "НИИ молекулярной электроники и завод "Микрон" | Дозатор гомогенной парогазовой смеси |
| DE10200786B4 (de) * | 2002-01-11 | 2004-11-11 | Dockweiler Ag | Sicherheitsbehälter |
| JP4954448B2 (ja) | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
| JP4714422B2 (ja) | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置 |
| JP4689969B2 (ja) * | 2003-04-05 | 2011-06-01 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Iva族およびvia族化合物の調製 |
| EP1747302B1 (de) * | 2004-05-20 | 2012-12-26 | Akzo Nobel N.V. | Bubbler zur konstanten dampfzufuhr einer festen chemikalie |
| US7722720B2 (en) * | 2004-12-08 | 2010-05-25 | Rohm And Haas Electronic Materials Llc | Delivery device |
| FI118803B (fi) | 2005-04-22 | 2008-03-31 | Beneq Oy | Lähde, järjestely lähteen asentamiseksi sekä menetelmä lähteen asentamiseksi ja poistamiseksi |
| US9725293B2 (en) * | 2005-11-29 | 2017-08-08 | Petainer Lidkoping Ab | System and method for distribution and dispensing of beverages |
| US20070154637A1 (en) * | 2005-12-19 | 2007-07-05 | Rohm And Haas Electronic Materials Llc | Organometallic composition |
| US8337959B2 (en) * | 2006-11-28 | 2012-12-25 | Nanonex Corporation | Method and apparatus to apply surface release coating for imprint mold |
| TWI398541B (zh) | 2007-06-05 | 2013-06-11 | 羅門哈斯電子材料有限公司 | 有機金屬化合物 |
| US8142847B2 (en) | 2007-07-13 | 2012-03-27 | Rohm And Haas Electronic Materials Llc | Precursor compositions and methods |
| US7659414B2 (en) | 2007-07-20 | 2010-02-09 | Rohm And Haas Company | Method of preparing organometallic compounds |
| JP5690498B2 (ja) | 2009-03-27 | 2015-03-25 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 基体上に膜を堆積する方法および気化前駆体化合物を送達する装置 |
| KR100977374B1 (ko) * | 2009-08-03 | 2010-08-20 | 텔리오솔라 테크놀로지스 인크 | 대면적 박막형 cigs 태양전지 고속증착 및 양산장비, 그 공정방법 |
| EP2339048B1 (de) | 2009-09-14 | 2016-12-07 | Rohm and Haas Electronic Materials, L.L.C. | Verfahren zum Abscheiden von organometallischen Verbindungen |
| US8747092B2 (en) | 2010-01-22 | 2014-06-10 | Nanonex Corporation | Fast nanoimprinting apparatus using deformale mold |
| DE102012204902A1 (de) * | 2012-03-27 | 2013-10-02 | Evonik Degussa Gmbh | Gebinde zur Handhabung und für den Transport von hochreinen und ultra hochreinen Chemikalien |
| EP2872669A4 (de) * | 2012-07-13 | 2016-03-23 | Omniprobe Inc | Gaseinspritzsystem für instrumente mit energetischem strahl |
| WO2014145826A2 (en) | 2013-03-15 | 2014-09-18 | Nanonex Corporation | System and methods of mold/substrate separation for imprint lithography |
| US10105883B2 (en) | 2013-03-15 | 2018-10-23 | Nanonex Corporation | Imprint lithography system and method for manufacturing |
| US9957612B2 (en) | 2014-01-17 | 2018-05-01 | Ceres Technologies, Inc. | Delivery device, methods of manufacture thereof and articles comprising the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL23694C (de) * | 1926-10-08 | 1900-01-01 | ||
| US1769904A (en) * | 1929-01-17 | 1930-07-01 | R M Hollingshead Co | Liquid mixer |
| US3179290A (en) * | 1961-06-05 | 1965-04-20 | Owens Illinois Glass Co | Drip-preventing and pouring means and method for forming same |
| US3339811A (en) * | 1965-09-07 | 1967-09-05 | Brau Supply Co Inc | Beer keg |
| DE1947463A1 (de) * | 1969-01-30 | 1970-08-06 | Halbleiterwerk Frankfurt Oder | Vorrichtung zum Beladen von Traegergasen |
| JPS5528422B2 (de) * | 1972-07-19 | 1980-07-28 |
-
1982
- 1982-12-09 US US06/448,160 patent/US4506815A/en not_active Expired - Lifetime
-
1983
- 1983-11-22 AT AT83307136T patent/ATE32240T1/de not_active IP Right Cessation
- 1983-11-22 DE DE8383307136T patent/DE3375494D1/de not_active Expired
- 1983-11-22 EP EP83307136A patent/EP0113518B1/de not_active Expired
- 1983-11-22 DE DE198383307136T patent/DE113518T1/de active Pending
- 1983-12-05 JP JP58229749A patent/JPS59151699A/ja active Pending
- 1983-12-08 CA CA000442852A patent/CA1220768A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0113518B1 (de) | 1988-01-27 |
| US4506815A (en) | 1985-03-26 |
| DE113518T1 (de) | 1984-12-20 |
| JPS59151699A (ja) | 1984-08-30 |
| CA1220768A (en) | 1987-04-21 |
| EP0113518A3 (en) | 1984-10-24 |
| EP0113518A2 (de) | 1984-07-18 |
| DE3375494D1 (en) | 1988-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE32240T1 (de) | Sprudelzylinder und tauchrohrgefaess. | |
| FR2354393A1 (fr) | Procede et dispositif de pulverisation cathodique reactive | |
| GB2141444A (en) | Chemical vapor deposition of titanium nitride and like films | |
| KR830006816A (ko) | P-형 반도체 합금 제조방법 | |
| JPS57145999A (en) | Plating device | |
| GB1266218A (de) | ||
| DE3572199D1 (en) | Chemical vapor deposition wafer boat | |
| FR3116648B1 (fr) | Dispositif et procédé d'assemblage fluidique de micropuces sur un substrat | |
| DE3671484D1 (de) | Sprudelzylindervorrichtung. | |
| KR100523935B1 (ko) | 화학 기상 증착공정을 위한 전구체의 기화장치 | |
| JPS5511032A (en) | Vapor-liquid contact apparatus | |
| JPS56129370A (en) | Polyacetylene semiconductor element | |
| Goddu et al. | Counting of radioactivity in liquid samples | |
| Kolotyrkin | Mechanism of anodic solution of homogeneous and heterogeneous metallic materials. | |
| KR920008835A (ko) | 다결정 실리콘 증착시 미반응 입자 오염 방지방법 | |
| JPS57164524A (en) | Vapor reaction for semiconductor wafer | |
| Heidersbach | Optimization of the electrochemical hydrogen permeation technique[Final Report] | |
| JPH0388333U (de) | ||
| JPS57157547A (en) | Manufacture of semiconductor device | |
| JPS52137976A (en) | Liquid phase vapor growth apparatus for compound semiconductors | |
| Lowell et al. | Effects of diffusion on aluminum depletion and degradation of NiAl coatings | |
| JPS57113701A (en) | Manufacture and manufacturing device of duct type trolley | |
| JPS57106032A (en) | Transferring device for fine pattern | |
| RU92010848A (ru) | Устройство для регулирования расхода жидкости - "регулятор галкина" | |
| JPS5488124A (en) | Dip and flow resist developing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification | ||
| REN | Ceased due to non-payment of the annual fee |