ATE32240T1 - Sprudelzylinder und tauchrohrgefaess. - Google Patents

Sprudelzylinder und tauchrohrgefaess.

Info

Publication number
ATE32240T1
ATE32240T1 AT83307136T AT83307136T ATE32240T1 AT E32240 T1 ATE32240 T1 AT E32240T1 AT 83307136 T AT83307136 T AT 83307136T AT 83307136 T AT83307136 T AT 83307136T AT E32240 T1 ATE32240 T1 AT E32240T1
Authority
AT
Austria
Prior art keywords
liquid
cylinder
contamination
dip tube
diaphragm valves
Prior art date
Application number
AT83307136T
Other languages
English (en)
Inventor
Andreas A Melas
John W O'grady Jr
Original Assignee
Thiokol Morton Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thiokol Morton Inc filed Critical Thiokol Morton Inc
Application granted granted Critical
Publication of ATE32240T1 publication Critical patent/ATE32240T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Chemical Vapour Deposition (AREA)
AT83307136T 1982-12-09 1983-11-22 Sprudelzylinder und tauchrohrgefaess. ATE32240T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/448,160 US4506815A (en) 1982-12-09 1982-12-09 Bubbler cylinder and dip tube device
EP83307136A EP0113518B1 (de) 1982-12-09 1983-11-22 Sprudelzylinder und Tauchrohrgefäss

Publications (1)

Publication Number Publication Date
ATE32240T1 true ATE32240T1 (de) 1988-02-15

Family

ID=23779241

Family Applications (1)

Application Number Title Priority Date Filing Date
AT83307136T ATE32240T1 (de) 1982-12-09 1983-11-22 Sprudelzylinder und tauchrohrgefaess.

Country Status (6)

Country Link
US (1) US4506815A (de)
EP (1) EP0113518B1 (de)
JP (1) JPS59151699A (de)
AT (1) ATE32240T1 (de)
CA (1) CA1220768A (de)
DE (2) DE3375494D1 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3508543A1 (de) * 1985-03-09 1986-09-18 Merck Patent Gmbh, 6100 Darmstadt Entnahmekopf fuer fluessigkeitsbehaelter
US4919304A (en) * 1985-08-01 1990-04-24 American Cyanamid Company Bubbler cylinder device
DE3671484D1 (de) * 1985-08-01 1990-06-28 American Cyanamid Co Sprudelzylindervorrichtung.
JPS6311598A (ja) * 1986-07-03 1988-01-19 Toyo Sutoufuaa Chem:Kk 有機金属気相成長用シリンダ−
DE58901441D1 (de) * 1988-02-11 1992-06-25 Siemens Ag Thermostatisierte anordnung zur sicheren und kontrollierten verdampfung von giftigen oder an der luft hochreaktiven fluessigen reaktionsmedien, vorzugsweise fuer niederdruckdampfabscheideanlagen in der halbleitertechnik.
JPH0269389A (ja) * 1988-08-31 1990-03-08 Toyo Stauffer Chem Co 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法
GB2223509B (en) * 1988-10-04 1992-08-05 Stc Plc Vapour phase processing
EP0420596B1 (de) * 1989-09-26 1996-06-19 Canon Kabushiki Kaisha Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage
WO1991016138A1 (en) * 1990-04-23 1991-10-31 S.C. Johnson & Son, Inc. Precision-ratioed fluid-mixing device and system
US5199603A (en) * 1991-11-26 1993-04-06 Prescott Norman F Delivery system for organometallic compounds
EP0555614A1 (de) * 1992-02-13 1993-08-18 International Business Machines Corporation Organo-Metall-Gas Quelle für MOVPE- und MOMBE-Verfahren
GB9206552D0 (en) * 1992-03-26 1992-05-06 Epichem Ltd Bubblers
IT1257434B (it) * 1992-12-04 1996-01-17 Cselt Centro Studi Lab Telecom Generatore di vapori per impianti di deposizione chimica da fase vapore
ATE298013T1 (de) * 1999-08-20 2005-07-15 Morton Int Inc Sprudelvorrichtung mit zwei fritten
RU2227903C2 (ru) * 2001-12-06 2004-04-27 Открытое акционерное общество "НИИ молекулярной электроники и завод "Микрон" Дозатор гомогенной парогазовой смеси
DE10200786B4 (de) * 2002-01-11 2004-11-11 Dockweiler Ag Sicherheitsbehälter
JP4954448B2 (ja) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 有機金属化合物
JP4714422B2 (ja) 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
JP4689969B2 (ja) * 2003-04-05 2011-06-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. Iva族およびvia族化合物の調製
AU2005245634B2 (en) * 2004-05-20 2010-07-01 Akzo Nobel Chemicals International B.V. Bubbler for constant vapor delivery of a solid chemical
US7722720B2 (en) 2004-12-08 2010-05-25 Rohm And Haas Electronic Materials Llc Delivery device
FI118803B (fi) 2005-04-22 2008-03-31 Beneq Oy Lähde, järjestely lähteen asentamiseksi sekä menetelmä lähteen asentamiseksi ja poistamiseksi
RU2008126244A (ru) * 2005-11-29 2010-01-10 Рексам Петаинер Лидчепинг Аб (Se) Устройство и способ разливания и дозирования напитков
US20070154637A1 (en) * 2005-12-19 2007-07-05 Rohm And Haas Electronic Materials Llc Organometallic composition
US8337959B2 (en) * 2006-11-28 2012-12-25 Nanonex Corporation Method and apparatus to apply surface release coating for imprint mold
JP5437594B2 (ja) 2007-06-05 2014-03-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 有機金属化合物
US8142847B2 (en) 2007-07-13 2012-03-27 Rohm And Haas Electronic Materials Llc Precursor compositions and methods
US7659414B2 (en) 2007-07-20 2010-02-09 Rohm And Haas Company Method of preparing organometallic compounds
JP5690498B2 (ja) 2009-03-27 2015-03-25 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 基体上に膜を堆積する方法および気化前駆体化合物を送達する装置
KR100977374B1 (ko) * 2009-08-03 2010-08-20 텔리오솔라 테크놀로지스 인크 대면적 박막형 cigs 태양전지 고속증착 및 양산장비, 그 공정방법
EP2339048B1 (de) 2009-09-14 2016-12-07 Rohm and Haas Electronic Materials, L.L.C. Verfahren zum Abscheiden von organometallischen Verbindungen
US8747092B2 (en) 2010-01-22 2014-06-10 Nanonex Corporation Fast nanoimprinting apparatus using deformale mold
DE102012204902A1 (de) * 2012-03-27 2013-10-02 Evonik Degussa Gmbh Gebinde zur Handhabung und für den Transport von hochreinen und ultra hochreinen Chemikalien
WO2014011292A1 (en) * 2012-07-13 2014-01-16 Omniprobe, Inc. Gas injection system for energetic-beam instruments
US10108086B2 (en) 2013-03-15 2018-10-23 Nanonex Corporation System and methods of mold/substrate separation for imprint lithography
US10105883B2 (en) 2013-03-15 2018-10-23 Nanonex Corporation Imprint lithography system and method for manufacturing
US9957612B2 (en) 2014-01-17 2018-05-01 Ceres Technologies, Inc. Delivery device, methods of manufacture thereof and articles comprising the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL23694C (de) * 1926-10-08 1900-01-01
US1769904A (en) * 1929-01-17 1930-07-01 R M Hollingshead Co Liquid mixer
US3179290A (en) * 1961-06-05 1965-04-20 Owens Illinois Glass Co Drip-preventing and pouring means and method for forming same
US3339811A (en) * 1965-09-07 1967-09-05 Brau Supply Co Inc Beer keg
DE1947463A1 (de) * 1969-01-30 1970-08-06 Halbleiterwerk Frankfurt Oder Vorrichtung zum Beladen von Traegergasen
JPS5528422B2 (de) * 1972-07-19 1980-07-28

Also Published As

Publication number Publication date
EP0113518A3 (en) 1984-10-24
JPS59151699A (ja) 1984-08-30
EP0113518B1 (de) 1988-01-27
US4506815A (en) 1985-03-26
CA1220768A (en) 1987-04-21
DE113518T1 (de) 1984-12-20
DE3375494D1 (en) 1988-03-03
EP0113518A2 (de) 1984-07-18

Similar Documents

Publication Publication Date Title
DE3375494D1 (en) Bubbler cylinder and dip tube device
FR2469699A1 (fr) Dispositif pour le prelevement de doses d'un liquide contenu dans un reservoir et pour leur distribution dans d'autres recipients
TW352457B (en) Chemical vapor phase growth apparatus (3)
FR2354393A1 (fr) Procede et dispositif de pulverisation cathodique reactive
KR960010901A (ko) 고체 유기화합물 전용 버블러 장치
RU2005141760A (ru) Простая система химического осаждения из паров и способы нанесения многометаллических алюминидных покрытий
GB1266218A (de)
AU4195985A (en) Chemical vapour deposition wafer boat
ES8306914A1 (es) Procedimiento de fabricacion de una virola de cuba de reac- tor nuclear
FR3116648B1 (fr) Dispositif et procédé d'assemblage fluidique de micropuces sur un substrat
DE3671484D1 (de) Sprudelzylindervorrichtung.
JPS5511032A (en) Vapor-liquid contact apparatus
JPS5694749A (en) Plasma heaping device
KR100523935B1 (ko) 화학 기상 증착공정을 위한 전구체의 기화장치
JPS56129370A (en) Polyacetylene semiconductor element
JPS6487768A (en) Multifunction vacuum plating device
Kim et al. Distribution of trace metals and sediments in estuaries of the Kum River and the Mankyung River
SU625728A1 (ru) Тепломассообменный аппарат
Kolotyrkin Mechanism of anodic solution of homogeneous and heterogeneous metallic materials.
JPS5648181A (en) Module for photogenerating device
JPS5766639A (en) Plasma etching device
JPS57158379A (en) Structure of evaporating source for continuous vacuum deposition
JPS5557361A (en) Preventing method for closing of immersion nozzle
KR920008835A (ko) 다결정 실리콘 증착시 미반응 입자 오염 방지방법
JPS57164524A (en) Vapor reaction for semiconductor wafer

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee