ATE323711T1 - Organometallverbindungen und ihre verwendung als vorstufen zur ausbildung von schichten und pulvern von metallen oder metall-derivaten - Google Patents

Organometallverbindungen und ihre verwendung als vorstufen zur ausbildung von schichten und pulvern von metallen oder metall-derivaten

Info

Publication number: ATE323711T1
Authority: AT; Austria
Prior art keywords: group; metals; precursors; powders; metal
Prior art date: 2000-06-29

Application number

AT01950811T

Other languages

English (en)

Inventor

Hyungsoo Choi

Original Assignee

Univ Illinois

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-06-29

Filing date

2001-06-29

Publication date

2006-05-15

2001-06-29 Application filed by Univ Illinois filed Critical Univ Illinois

2006-05-15 Application granted granted Critical

2006-05-15 Publication of ATE323711T1 publication Critical patent/ATE323711T1/de

Links

229910052751 metal Inorganic materials 0.000 title abstract 7
239000002184 metal Substances 0.000 title abstract 7
150000002739 metals Chemical class 0.000 title abstract 4
239000000843 powder Substances 0.000 title abstract 2
239000002243 precursor Substances 0.000 title abstract 2
150000001875 compounds Chemical class 0.000 title 1
YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical group [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 abstract 2
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
229910017052 cobalt Inorganic materials 0.000 abstract 2
239000010941 cobalt Substances 0.000 abstract 2
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 2
229910052805 deuterium Inorganic materials 0.000 abstract 2
229910052739 hydrogen Inorganic materials 0.000 abstract 2
239000001257 hydrogen Substances 0.000 abstract 2
150000002902 organometallic compounds Chemical class 0.000 abstract 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
125000004469 siloxy group Chemical group [SiH3]O* 0.000 abstract 2
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract 1
125000000217 alkyl group Chemical group 0.000 abstract 1
125000003710 aryl alkyl group Chemical group 0.000 abstract 1
125000003118 aryl group Chemical group 0.000 abstract 1
230000015572 biosynthetic process Effects 0.000 abstract 1
238000005234 chemical deposition Methods 0.000 abstract 1
238000005229 chemical vapour deposition Methods 0.000 abstract 1
150000002431 hydrogen Chemical group 0.000 abstract 1
125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
ILNKLXHFYKXPKY-UHFFFAOYSA-N iridium osmium Chemical compound [Os].[Ir] ILNKLXHFYKXPKY-UHFFFAOYSA-N 0.000 abstract 1
229910052742 iron Inorganic materials 0.000 abstract 1
WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract 1
238000004519 manufacturing process Methods 0.000 abstract 1
238000000034 method Methods 0.000 abstract 1
229910052759 nickel Inorganic materials 0.000 abstract 1
125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 abstract 1
-1 oxysilyl Chemical group 0.000 abstract 1
229910052763 palladium Inorganic materials 0.000 abstract 1
229910052697 platinum Inorganic materials 0.000 abstract 1
229910052702 rhenium Inorganic materials 0.000 abstract 1
WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 abstract 1
229910052703 rhodium Inorganic materials 0.000 abstract 1
239000010948 rhodium Substances 0.000 abstract 1
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
229910052707 ruthenium Inorganic materials 0.000 abstract 1
125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 abstract 1
125000000547 substituted alkyl group Chemical group 0.000 abstract 1
239000000758 substrate Substances 0.000 abstract 1
229910052713 technetium Inorganic materials 0.000 abstract 1
GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
- C07F15/065—Cobalt compounds without a metal-carbon linkage
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Catalysts (AREA)

AT01950811T 2000-06-29 2001-06-29 Organometallverbindungen und ihre verwendung als vorstufen zur ausbildung von schichten und pulvern von metallen oder metall-derivaten ATE323711T1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US21498800P	2000-06-29	2000-06-29
US09/894,450 US6777565B2 (en)	2000-06-29	2001-06-28	Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives

Publications (1)

Publication Number	Publication Date
ATE323711T1 true ATE323711T1 (de)	2006-05-15

Family

ID=26909576

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT01950811T ATE323711T1 (de)	2000-06-29	2001-06-29	Organometallverbindungen und ihre verwendung als vorstufen zur ausbildung von schichten und pulvern von metallen oder metall-derivaten

Country Status (8)

Country	Link
US (4)	US6777565B2 (de)
EP (1)	EP1299404B1 (de)
KR (1)	KR100795324B1 (de)
CN (1)	CN100354286C (de)
AT (1)	ATE323711T1 (de)
AU (1)	AU2001271770A1 (de)
DE (1)	DE60118925T2 (de)
WO (1)	WO2002002574A1 (de)

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KR20100017171A (ko)	2007-05-21	2010-02-16	레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드	반도체 적용을 위한 신규 코발트 전구체
US20090220771A1 (en) *	2008-02-12	2009-09-03	Robert Fleming	Voltage switchable dielectric material with superior physical properties for structural applications
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CN103413758B (zh) *	2013-07-17	2017-02-08	华为技术有限公司	半导体鳍条的制作方法、FinFET器件的制作方法
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JP2019500495A (ja) *	2015-12-02	2019-01-10	ビーエーエスエフソシエタス・ヨーロピアＢａｓｆＳｅ	薄い無機膜の生成方法
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2001
- 2001-06-28 US US09/894,450 patent/US6777565B2/en not_active Expired - Lifetime
- 2001-06-29 AT AT01950811T patent/ATE323711T1/de not_active IP Right Cessation
- 2001-06-29 KR KR1020027017924A patent/KR100795324B1/ko not_active Expired - Fee Related
- 2001-06-29 CN CNB018121519A patent/CN100354286C/zh not_active Expired - Fee Related
- 2001-06-29 EP EP01950811A patent/EP1299404B1/de not_active Expired - Lifetime
- 2001-06-29 WO PCT/US2001/021050 patent/WO2002002574A1/en not_active Ceased
- 2001-06-29 AU AU2001271770A patent/AU2001271770A1/en not_active Abandoned
- 2001-06-29 DE DE60118925T patent/DE60118925T2/de not_active Expired - Fee Related
2002
- 2002-11-08 US US10/290,719 patent/US6753245B2/en not_active Expired - Fee Related
2004
- 2004-04-19 US US10/827,479 patent/US7507390B2/en not_active Expired - Fee Related
2008
- 2008-07-08 US US12/169,211 patent/US20080268151A1/en not_active Abandoned

Also Published As

Publication number	Publication date
US20040197470A1 (en)	2004-10-07
CN100354286C (zh)	2007-12-12
AU2001271770A1 (en)	2002-01-14
EP1299404B1 (de)	2006-04-19
US6753245B2 (en)	2004-06-22
KR100795324B1 (ko)	2008-01-21
WO2002002574A1 (en)	2002-01-10
DE60118925T2 (de)	2006-12-21
US20020015789A1 (en)	2002-02-07
US7507390B2 (en)	2009-03-24
CN1440417A (zh)	2003-09-03
US20030073860A1 (en)	2003-04-17
DE60118925D1 (de)	2006-05-24
KR20030028767A (ko)	2003-04-10
US20080268151A1 (en)	2008-10-30
US6777565B2 (en)	2004-08-17
EP1299404A1 (de)	2003-04-09

Legal Events

Date	Code	Title	Description
2006-10-15	RER	Ceased as to paragraph 5 lit. 3 law introducing patent treaties

Publication	Publication Date	Title
ATE323711T1 (de)	2006-05-15	Organometallverbindungen und ihre verwendung als vorstufen zur ausbildung von schichten und pulvern von metallen oder metall-derivaten
JP6465699B2 (ja)	2019-02-06	ジアザジエニル化合物、薄膜形成用原料、薄膜の製造方法及びジアザジエン化合物
TW490502B (en)	2002-06-11	Volatile precursors for deposition of metals and metal-containing films
Parkin et al.	2001	The first single source deposition of tin sulfide coatings on glass: aerosol-assisted chemical vapour deposition using [Sn (SCH2CH2S) 2]
TW200628628A (en)	2006-08-16	Preparation of metal silicon nitride films via cyclic deposition
DE602006001873D1 (de)	2008-09-04	Metallorganische Komplexe und deren Verwendung als Vorläuferverbindungen für die Abscheidung von Metallfilmen
KR101787204B1 (ko)	2017-10-18	원자층 증착용(ald) 유기금속 전구체 화합물 및 이를 이용한 ald 증착법
TW200714738A (en)	2007-04-16	Ti, Ta, Hf, Zr, and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
DE69914092D1 (de)	2004-02-12	Herstellungsverfahren für ruthenium-metallschichten
JP2018514942A (ja)	2018-06-07	薄い無機膜の生成方法
ATE521728T1 (de)	2011-09-15	Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthalten
KR102541122B1 (ko)	2023-06-08	신규 화합물, 박막 형성용 원료 및 박막의 제조 방법
ATE231030T1 (de)	2003-02-15	Verfahren zur herstellung von silasesquioxan- metallkomplexen, neue silasesquioxan- metallkomplexe und deren verwendung
AU743343B2 (en)	2002-01-24	Novel copper(I) precursors for chemical deposit in gas phase of metallic copper
KR20140067786A (ko)	2014-06-05	실리콘 전구체 화합물, 및 상기 전구체 화합물을 이용한 실리콘-함유 박막의 증착 방법
EP3135664A1 (de)	2017-03-01	Alkoxidverbindung, rohmaterial zur bildung eines dünnfilms, verfahren zur herstellung eines dünnfilms und alkoholverbindung
EP3539973A1 (de)	2019-09-18	Verbindung, ausgangsmaterial zur bildung einer dünnschicht, verfahren zur herstellung und amidinverbindung
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