ATE325900T1 - Vorlegierte aluminium-siliciumlegierung und verfahren ihrer herstellung - Google Patents

Vorlegierte aluminium-siliciumlegierung und verfahren ihrer herstellung

Info

Publication number
ATE325900T1
ATE325900T1 AT01310961T AT01310961T ATE325900T1 AT E325900 T1 ATE325900 T1 AT E325900T1 AT 01310961 T AT01310961 T AT 01310961T AT 01310961 T AT01310961 T AT 01310961T AT E325900 T1 ATE325900 T1 AT E325900T1
Authority
AT
Austria
Prior art keywords
production
silicon alloy
alloyed aluminum
aluminum
binary alloy
Prior art date
Application number
AT01310961T
Other languages
English (en)
Inventor
Brian J Mctiernan
Jocelyne O Mcgeever
Michael W Peretti
Original Assignee
Crucible Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crucible Materials Corp filed Critical Crucible Materials Corp
Application granted granted Critical
Publication of ATE325900T1 publication Critical patent/ATE325900T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C22C1/1036—Alloys containing non-metals starting from a melt
    • C22C1/1042—Alloys containing non-metals starting from a melt by atomising
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/18—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Laminated Bodies (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT01310961T 2001-04-11 2001-12-31 Vorlegierte aluminium-siliciumlegierung und verfahren ihrer herstellung ATE325900T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/832,128 US6475263B1 (en) 2001-04-11 2001-04-11 Silicon aluminum alloy of prealloyed powder and method of manufacture

Publications (1)

Publication Number Publication Date
ATE325900T1 true ATE325900T1 (de) 2006-06-15

Family

ID=25260766

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01310961T ATE325900T1 (de) 2001-04-11 2001-12-31 Vorlegierte aluminium-siliciumlegierung und verfahren ihrer herstellung

Country Status (9)

Country Link
US (1) US6475263B1 (de)
EP (1) EP1249509B1 (de)
JP (1) JP2002339032A (de)
AT (1) ATE325900T1 (de)
CY (1) CY1105259T1 (de)
DE (1) DE60119488T2 (de)
DK (1) DK1249509T3 (de)
ES (1) ES2267689T3 (de)
PT (1) PT1249509E (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005529239A (ja) * 2002-06-07 2005-09-29 ヘラエウス インコーポレーテッド 処理従順な金属間化合物スパッタリングターゲットの製造方法
JP2005303196A (ja) * 2004-04-15 2005-10-27 Canon Inc 位置決め装置、露光装置、半導体デバイスの製造方法
US20070289869A1 (en) * 2006-06-15 2007-12-20 Zhifei Ye Large Area Sputtering Target
WO2008081585A1 (ja) * 2007-01-05 2008-07-10 Kabushiki Kaisha Toshiba スパッタリングターゲットとその製造方法
EP2096189A1 (de) 2008-02-28 2009-09-02 Applied Materials, Inc. Gesprühtes Si- oder Si:AI-Target mit geringem Eisengehalt
KR20180085059A (ko) 2014-03-31 2018-07-25 가부시끼가이샤 도시바 스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4402905A (en) * 1982-03-05 1983-09-06 Westinghouse Electric Corp. Production of a polycrystalline silicon aluminum alloy by a hot pressing technique
US5120352A (en) * 1983-06-23 1992-06-09 General Electric Company Method and apparatus for making alloy powder
DE3573137D1 (en) * 1984-10-03 1989-10-26 Sumitomo Electric Industries Material for a semiconductor device and process for its manufacture
US5084109A (en) * 1990-07-02 1992-01-28 Martin Marietta Energy Systems, Inc. Ordered iron aluminide alloys having an improved room-temperature ductility and method thereof
US5094288A (en) * 1990-11-21 1992-03-10 Silicon Casting, Inc. Method of making an essentially void-free, cast silicon and aluminum product
FR2721231B1 (fr) * 1994-06-21 1996-09-06 Wheelabrator Allevard Procédé d'atomisation d'un matériau liquide dispersable.
GB9514777D0 (en) * 1995-07-19 1995-09-20 Osprey Metals Ltd Silicon alloys for electronic packaging
DE69940854D1 (de) * 1998-12-28 2009-06-18 Ultraclad Corp Verfahren zur herstellung eines silizium/aluminiumsputtertargets

Also Published As

Publication number Publication date
DE60119488T2 (de) 2006-12-14
PT1249509E (pt) 2006-09-29
US20020170389A1 (en) 2002-11-21
EP1249509A2 (de) 2002-10-16
EP1249509A3 (de) 2005-06-01
EP1249509B1 (de) 2006-05-10
CY1105259T1 (el) 2010-03-03
US6475263B1 (en) 2002-11-05
JP2002339032A (ja) 2002-11-27
DK1249509T3 (da) 2006-09-11
DE60119488D1 (de) 2006-06-14
ES2267689T3 (es) 2007-03-16

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