ATE333668T1 - Strahlungsquelle hoher luminosität für die euv- lithographie - Google Patents

Strahlungsquelle hoher luminosität für die euv- lithographie

Info

Publication number
ATE333668T1
ATE333668T1 AT02258588T AT02258588T ATE333668T1 AT E333668 T1 ATE333668 T1 AT E333668T1 AT 02258588 T AT02258588 T AT 02258588T AT 02258588 T AT02258588 T AT 02258588T AT E333668 T1 ATE333668 T1 AT E333668T1
Authority
AT
Austria
Prior art keywords
point
light sources
mirror
euv
light
Prior art date
Application number
AT02258588T
Other languages
English (en)
Inventor
Katsuhiko Murakami
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of ATE333668T1 publication Critical patent/ATE333668T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Microscoopes, Condenser (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
AT02258588T 2001-12-13 2002-12-12 Strahlungsquelle hoher luminosität für die euv- lithographie ATE333668T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001380646A JP2003185798A (ja) 2001-12-13 2001-12-13 軟ｘ線光源装置およびｅｕｖ露光装置ならびに照明方法

Publications (1)

Publication Number Publication Date
ATE333668T1 true ATE333668T1 (de) 2006-08-15

Family

ID=19187212

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02258588T ATE333668T1 (de) 2001-12-13 2002-12-12 Strahlungsquelle hoher luminosität für die euv- lithographie

Country Status (7)

Country Link
US (1) US6861656B2 (de)
EP (1) EP1319988B1 (de)
JP (1) JP2003185798A (de)
KR (1) KR100895227B1 (de)
AT (1) ATE333668T1 (de)
DE (1) DE60213187T2 (de)
TW (1) TWI287236B (de)

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Publication number Priority date Publication date Assignee Title
US7492867B1 (en) * 1999-10-11 2009-02-17 University Of Central Flordia Research Foundation, Inc. Nanoparticle seeded short-wavelength discharge lamps
JP5098126B2 (ja) * 2001-08-07 2012-12-12 株式会社ニコン Ｘ線発生装置、露光装置、露光方法及びデバイス製造方法
US7002164B2 (en) * 2003-01-08 2006-02-21 Intel Corporation Source multiplexing in lithography
DE10305701B4 (de) * 2003-02-07 2005-10-06 Xtreme Technologies Gmbh Anordnung zur Erzeugung von EUV-Strahlung mit hohen Repetitionsraten
JP2004343082A (ja) * 2003-04-17 2004-12-02 Asml Netherlands Bv 凹面および凸面を含む集光器を備えたリトグラフ投影装置
US7911584B2 (en) * 2003-07-30 2011-03-22 Carl Zeiss Smt Gmbh Illumination system for microlithography
EP1658615B1 (de) 2003-08-27 2009-10-14 Carl Zeiss SMT AG Schiefspiegliges normal-incidence-kollektorsystem für lichtquellen, insbesondere euv-plasmaentladungsquellen
US7030963B2 (en) * 2004-05-03 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7105837B2 (en) * 2004-05-13 2006-09-12 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and radiation system
US7079225B2 (en) * 2004-09-14 2006-07-18 Asml Netherlands B.V Lithographic apparatus and device manufacturing method
JP2006156857A (ja) * 2004-12-01 2006-06-15 Canon Inc Ｘ線発生装置及び露光装置
US20070063996A1 (en) * 2005-09-14 2007-03-22 Childers Winthrop D Image display system and method
US20070064008A1 (en) * 2005-09-14 2007-03-22 Childers Winthrop D Image display system and method
US7551154B2 (en) * 2005-09-15 2009-06-23 Hewlett-Packard Development Company, L.P. Image display system and method
DE102006003683B3 (de) * 2006-01-24 2007-09-13 Xtreme Technologies Gmbh Anordnung und Verfahren zur Erzeugung von EUV-Strahlung hoher Durchschnittsleistung
JP5218994B2 (ja) * 2007-02-20 2013-06-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 複数の１次光源を有する光学要素
KR20100119481A (ko) * 2008-02-19 2010-11-09 나노 유브이 펄스형 소스의 다중화
DE102008042462B4 (de) * 2008-09-30 2010-11-04 Carl Zeiss Smt Ag Beleuchtungssystem für die EUV-Mikrolithographie
EP2204695B1 (de) 2008-12-31 2019-01-02 ASML Holding N.V. Lichtleitwertregelvorrichtung für einen gepulsten Strahl
KR20110019524A (ko) 2009-08-20 2011-02-28 삼성전자주식회사 극자외선용 투과형 렌즈 및 이를 포함하는 광학 시스템
DE102011004615A1 (de) * 2010-03-17 2011-09-22 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
US9625810B2 (en) 2011-03-16 2017-04-18 Kla-Tencor Corporation Source multiplexing illumination for mask inspection
US9151718B2 (en) 2012-03-19 2015-10-06 Kla-Tencor Corporation Illumination system with time multiplexed sources for reticle inspection
DE102012218105A1 (de) * 2012-10-04 2013-08-14 Carl Zeiss Smt Gmbh Vorrichtung zur Einkopplung von Beleuchtungsstrahlung in eine Beleuchtungsoptik
JPWO2016117118A1 (ja) * 2015-01-23 2017-10-26 国立大学法人九州大学 Ｅｕｖ光生成システム及びｅｕｖ光生成方法、並びにトムソン散乱計測システム
CN111354500B (zh) * 2020-03-16 2022-03-22 中国科学院高能物理研究所 一种同步辐射x射线双反射镜
CN115494702B (zh) * 2022-08-03 2024-10-18 深圳市亿优威光科技有限公司 用于极紫外光刻机的反射镜及极紫外光线收集方法
CN116909107B (zh) * 2023-07-25 2024-03-01 上海图双精密装备有限公司 一种光刻设备照明用光源系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5002348A (en) 1989-05-24 1991-03-26 E. I. Du Pont De Nemours And Company Scanning beam optical signal processor
DE59105477D1 (de) * 1991-10-30 1995-06-14 Fraunhofer Ges Forschung Belichtungsvorrichtung.
US5309198A (en) * 1992-02-25 1994-05-03 Nikon Corporation Light exposure system
US5765934A (en) * 1995-08-04 1998-06-16 Mitsubishi Denki Kabushiki Kaisha Projection type display
JP4238390B2 (ja) * 1998-02-27 2009-03-18 株式会社ニコン 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法
DE19935404A1 (de) * 1999-07-30 2001-02-01 Zeiss Carl Fa Beleuchtungssystem mit mehreren Lichtquellen
US6438199B1 (en) * 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
JP4332648B2 (ja) * 1999-04-07 2009-09-16 レーザーテック株式会社 光源装置
JP2001006840A (ja) 1999-06-25 2001-01-12 Tokin Corp サージ吸収素子及びその製造方法
DE19935568A1 (de) * 1999-07-30 2001-02-15 Zeiss Carl Fa Steuerung der Beleuchtungsverteilung in der Austrittspupille eines EUV-Beleuchtungssystems
EP1130450B1 (de) * 1999-08-13 2006-09-13 Seiko Epson Corporation Beleuchtungseinheit mit polarisiertem licht und projektions-anzeigevorrichtung

Also Published As

Publication number Publication date
US6861656B2 (en) 2005-03-01
KR20030051206A (ko) 2003-06-25
JP2003185798A (ja) 2003-07-03
KR100895227B1 (ko) 2009-05-04
DE60213187D1 (de) 2006-08-31
US20030223544A1 (en) 2003-12-04
DE60213187T2 (de) 2007-07-12
TW200302492A (en) 2003-08-01
TWI287236B (en) 2007-09-21
EP1319988A2 (de) 2003-06-18
EP1319988B1 (de) 2006-07-19
EP1319988A3 (de) 2004-10-13

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