ATE337602T1 - Verbessertes programmierungsverfahren für eine speicherzelle - Google Patents

Verbessertes programmierungsverfahren für eine speicherzelle

Info

Publication number
ATE337602T1
ATE337602T1 AT01106031T AT01106031T ATE337602T1 AT E337602 T1 ATE337602 T1 AT E337602T1 AT 01106031 T AT01106031 T AT 01106031T AT 01106031 T AT01106031 T AT 01106031T AT E337602 T1 ATE337602 T1 AT E337602T1
Authority
AT
Austria
Prior art keywords
cells
unselected
memory cell
programming method
reduces
Prior art date
Application number
AT01106031T
Other languages
English (en)
Inventor
Donald S Gerber
Jeffrey Shields
Kent D Hewitt
David M Davies
Original Assignee
Microchip Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/617,280 external-priority patent/US6236595B1/en
Application filed by Microchip Tech Inc filed Critical Microchip Tech Inc
Application granted granted Critical
Publication of ATE337602T1 publication Critical patent/ATE337602T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/28—Floating gate memory programmed by reverse programming, e.g. programmed with negative gate voltage and erased with positive gate voltage or programmed with high source or drain voltage and erased with high gate voltage

Landscapes

  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
AT01106031T 2000-03-22 2001-03-12 Verbessertes programmierungsverfahren für eine speicherzelle ATE337602T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19122500P 2000-03-22 2000-03-22
US09/617,280 US6236595B1 (en) 2000-07-17 2000-07-17 Programming method for a memory cell

Publications (1)

Publication Number Publication Date
ATE337602T1 true ATE337602T1 (de) 2006-09-15

Family

ID=26886871

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01106031T ATE337602T1 (de) 2000-03-22 2001-03-12 Verbessertes programmierungsverfahren für eine speicherzelle

Country Status (7)

Country Link
EP (1) EP1137012B1 (de)
JP (1) JP2001319487A (de)
KR (1) KR100523529B1 (de)
CN (1) CN1317800A (de)
AT (1) ATE337602T1 (de)
DE (1) DE60122412T2 (de)
TW (1) TW507200B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6771536B2 (en) 2002-02-27 2004-08-03 Sandisk Corporation Operating techniques for reducing program and read disturbs of a non-volatile memory
US7317116B2 (en) 2004-12-10 2008-01-08 Archer-Daniels-Midland-Company Processes for the preparation and purification of hydroxymethylfuraldehyde and derivatives
WO2006067853A1 (ja) * 2004-12-24 2006-06-29 Spansion Llc 記憶装置のバイアス印加方法、および記憶装置
US7272043B2 (en) * 2004-12-27 2007-09-18 Macronix International Co., Ltd. Operation methods for a non-volatile memory cell in an array
DE102005004107A1 (de) 2005-01-28 2006-08-17 Infineon Technologies Ag Integrierter Halbleiterspeicher mit einer Anordnung nichtflüchtiger Speicherzellen und Verfahren
TWI449045B (zh) * 2010-07-16 2014-08-11 Yield Microelectronics Corp Low cost electronic erasure can be rewritten read only memory array
CN102376718B (zh) * 2010-08-05 2013-09-11 亿而得微电子股份有限公司 低成本电可擦可编程只读存储器阵列
US8837219B2 (en) 2011-09-30 2014-09-16 Ememory Technology Inc. Method of programming nonvolatile memory
CN103137181B (zh) * 2013-02-25 2017-06-06 上海华虹宏力半导体制造有限公司 存储器、存储阵列的编程方法及电压提供系统
CN110619910B (zh) * 2019-08-30 2021-08-03 长江存储科技有限责任公司 存储器的控制方法、装置、存储介质

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910004166B1 (ko) * 1988-12-27 1991-06-22 삼성전자주식회사 낸드쎌들을 가지는 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치
KR100206709B1 (ko) * 1996-09-21 1999-07-01 윤종용 멀티비트 불휘발성 반도체 메모리의 셀 어레이의 구조 및 그의 구동방법
KR100232190B1 (ko) * 1996-10-01 1999-12-01 김영환 비휘발성 메모리장치
US5986931A (en) * 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
JP3951443B2 (ja) * 1997-09-02 2007-08-01 ソニー株式会社 不揮発性半導体記憶装置及びその書き込み方法
JP3198998B2 (ja) * 1997-09-11 2001-08-13 日本電気株式会社 半導体不揮発性メモリ
US6300183B1 (en) * 1999-03-19 2001-10-09 Microchip Technology Incorporated Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor

Also Published As

Publication number Publication date
EP1137012A2 (de) 2001-09-26
JP2001319487A (ja) 2001-11-16
EP1137012A3 (de) 2003-09-03
KR20010100834A (ko) 2001-11-14
EP1137012B1 (de) 2006-08-23
DE60122412D1 (de) 2006-10-05
CN1317800A (zh) 2001-10-17
KR100523529B1 (ko) 2005-10-24
DE60122412T2 (de) 2007-05-03
TW507200B (en) 2002-10-21

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