ATE337616T1 - Herstellungsverfahren für eine cuinse2-verbindung - Google Patents

Herstellungsverfahren für eine cuinse2-verbindung

Info

Publication number
ATE337616T1
ATE337616T1 AT94916362T AT94916362T ATE337616T1 AT E337616 T1 ATE337616 T1 AT E337616T1 AT 94916362 T AT94916362 T AT 94916362T AT 94916362 T AT94916362 T AT 94916362T AT E337616 T1 ATE337616 T1 AT E337616T1
Authority
AT
Austria
Prior art keywords
pct
cuinse2
compound
production process
sec
Prior art date
Application number
AT94916362T
Other languages
English (en)
Inventor
Francois Gremion
Jean-Paul Issartel
Klaus Mueller
Original Assignee
Yazaki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yazaki Corp filed Critical Yazaki Corp
Application granted granted Critical
Publication of ATE337616T1 publication Critical patent/ATE337616T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Electroplating And Plating Baths Therefor (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT94916362T 1993-06-08 1994-06-07 Herstellungsverfahren für eine cuinse2-verbindung ATE337616T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH01722/93A CH687112A5 (fr) 1993-06-08 1993-06-08 Procédé pour déposer un précurseur du composé CuInSe(2).

Publications (1)

Publication Number Publication Date
ATE337616T1 true ATE337616T1 (de) 2006-09-15

Family

ID=4217077

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94916362T ATE337616T1 (de) 1993-06-08 1994-06-07 Herstellungsverfahren für eine cuinse2-verbindung

Country Status (7)

Country Link
US (1) US5501786A (de)
EP (1) EP0658276B1 (de)
JP (1) JP3114997B2 (de)
AT (1) ATE337616T1 (de)
CH (1) CH687112A5 (de)
DE (1) DE69434829T2 (de)
WO (1) WO1994029904A1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2806469B2 (ja) * 1993-09-16 1998-09-30 矢崎総業株式会社 太陽電池吸収層の製造方法
JP3025550U (ja) * 1995-12-07 1996-06-21 尚武 後藤 火消し付き灰皿
US5985691A (en) * 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
JP4443645B2 (ja) * 1998-05-07 2010-03-31 本田技研工業株式会社 Ｃｂｄ成膜装置
AT408351B (de) * 2000-05-17 2001-11-26 Miba Gleitlager Ag Verfahren zum galvanischen abscheiden einer dispersionsschicht auf einer oberfläche eines werkstückes
AU2003207295A1 (en) * 2002-02-14 2003-09-04 Honda Giken Kogyo Kabushiki Kaisha Light absorbing layer forming method
RU2236065C1 (ru) * 2003-05-20 2004-09-10 Валерий Феликсович Гременок СПОСОБ ПОЛУЧЕНИЯ ПЛЕНОК ТВЕРДЫХ РАСТВОРОВ ZN2-2х CUх INх VI2
US8329501B1 (en) 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US8623448B2 (en) * 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US8309163B2 (en) * 2004-02-19 2012-11-13 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US8372734B2 (en) * 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
CN101894881A (zh) * 2004-03-15 2010-11-24 索罗能源公司 用于太阳能电池制造的沉积半导体薄层的技术和装置
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
US7582506B2 (en) * 2005-03-15 2009-09-01 Solopower, Inc. Precursor containing copper indium and gallium for selenide (sulfide) compound formation
US20070093006A1 (en) * 2005-10-24 2007-04-26 Basol Bulent M Technique For Preparing Precursor Films And Compound Layers For Thin Film Solar Cell Fabrication And Apparatus Corresponding Thereto
US7713773B2 (en) * 2005-11-02 2010-05-11 Solopower, Inc. Contact layers for thin film solar cells employing group IBIIIAVIA compound absorbers
US7507321B2 (en) * 2006-01-06 2009-03-24 Solopower, Inc. Efficient gallium thin film electroplating methods and chemistries
US7736913B2 (en) 2006-04-04 2010-06-15 Solopower, Inc. Composition control for photovoltaic thin film manufacturing
US20070227633A1 (en) * 2006-04-04 2007-10-04 Basol Bulent M Composition control for roll-to-roll processed photovoltaic films
US20080023059A1 (en) * 2006-07-25 2008-01-31 Basol Bulent M Tandem solar cell structures and methods of manufacturing same
US7892413B2 (en) * 2006-09-27 2011-02-22 Solopower, Inc. Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
US20090183675A1 (en) * 2006-10-13 2009-07-23 Mustafa Pinarbasi Reactor to form solar cell absorbers
US20100139557A1 (en) * 2006-10-13 2010-06-10 Solopower, Inc. Reactor to form solar cell absorbers in roll-to-roll fashion
US20080175993A1 (en) * 2006-10-13 2008-07-24 Jalal Ashjaee Reel-to-reel reaction of a precursor film to form solar cell absorber
RU2347298C1 (ru) * 2007-06-28 2009-02-20 Государственное научно-производственное объединение "Научно-практический центр Национальной академии наук Беларуси по материаловедению"(ГО"НПЦ НАН Беларуси по материаловедению") СПОСОБ ПОЛУЧЕНИЯ Cu(In, Ga)(S, Se)2 ТОНКИХ ПЛЕНОК
US8425753B2 (en) * 2008-05-19 2013-04-23 Solopower, Inc. Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
US8324414B2 (en) 2009-12-23 2012-12-04 Battelle Energy Alliance, Llc Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods
US8951446B2 (en) 2008-03-13 2015-02-10 Battelle Energy Alliance, Llc Hybrid particles and associated methods
US8003070B2 (en) * 2008-03-13 2011-08-23 Battelle Energy Alliance, Llc Methods for forming particles from single source precursors
US9371226B2 (en) 2011-02-02 2016-06-21 Battelle Energy Alliance, Llc Methods for forming particles
US20100226629A1 (en) * 2008-07-21 2010-09-09 Solopower, Inc. Roll-to-roll processing and tools for thin film solar cell manufacturing
BRPI1011652A2 (pt) 2009-05-26 2016-03-22 Purdue Research Foundation películas finas para células fotovoltaicas
TWI520367B (zh) * 2010-02-09 2016-02-01 陶氏全球科技公司 具透明導電阻擋層之光伏打裝置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581108A (en) * 1984-01-06 1986-04-08 Atlantic Richfield Company Process of forming a compound semiconductive material
DE4103291A1 (de) * 1990-09-22 1992-04-02 Battelle Institut E V Verfahren zur herstellung einer absorberschicht fuer solarzellen mit hilfe galvanischer abscheidetechnik
FR2668299A1 (fr) * 1990-10-23 1992-04-24 Centre Nat Rech Scient Procede de preparation de couches d'alliage cuivre-indium, et cellules photovoltauiques obtenues par sa mise en óoeuvre.

Also Published As

Publication number Publication date
US5501786A (en) 1996-03-26
DE69434829T2 (de) 2007-08-16
JP3114997B2 (ja) 2000-12-04
DE69434829D1 (de) 2006-10-05
EP0658276B1 (de) 2006-08-23
JPH08509102A (ja) 1996-09-24
EP0658276A1 (de) 1995-06-21
CH687112A5 (fr) 1996-09-13
WO1994029904A1 (fr) 1994-12-22

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