ATE346380T1 - Verfahren zur musterbildung - Google Patents
Verfahren zur musterbildungInfo
- Publication number
- ATE346380T1 ATE346380T1 AT01933947T AT01933947T ATE346380T1 AT E346380 T1 ATE346380 T1 AT E346380T1 AT 01933947 T AT01933947 T AT 01933947T AT 01933947 T AT01933947 T AT 01933947T AT E346380 T1 ATE346380 T1 AT E346380T1
- Authority
- AT
- Austria
- Prior art keywords
- pattern formation
- film
- mocr
- ito film
- etched
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrically Operated Instructional Devices (AREA)
- Diaphragms For Electromechanical Transducers (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000151234A JP4630420B2 (ja) | 2000-05-23 | 2000-05-23 | パターン形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE346380T1 true ATE346380T1 (de) | 2006-12-15 |
Family
ID=18656826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01933947T ATE346380T1 (de) | 2000-05-23 | 2001-05-08 | Verfahren zur musterbildung |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6693000B2 (de) |
| EP (1) | EP1290723B1 (de) |
| JP (1) | JP4630420B2 (de) |
| KR (1) | KR100765305B1 (de) |
| CN (1) | CN100429754C (de) |
| AT (1) | ATE346380T1 (de) |
| DE (1) | DE60124704T2 (de) |
| WO (1) | WO2001091172A2 (de) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60336441D1 (de) | 2002-09-02 | 2011-05-05 | Samsung Electronics Co Ltd | Kontaktstruktur für eine Halbleitervorrichtung, dünnschichtige Transistoranordnung mit einer solchen Kontaktstruktur und dessen Herstellungsmethode |
| JP2005223049A (ja) * | 2004-02-04 | 2005-08-18 | Ricoh Co Ltd | 半導体装置、半導体装置の製造方法、および表示装置 |
| JP2005223048A (ja) * | 2004-02-04 | 2005-08-18 | Ricoh Co Ltd | 半導体装置、半導体装置の製造方法、および表示装置 |
| US7547627B2 (en) * | 2004-11-29 | 2009-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7560735B2 (en) | 2005-04-22 | 2009-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, organic transistor, light-emitting device, and electronic device |
| JP5121162B2 (ja) * | 2005-04-22 | 2013-01-16 | 株式会社半導体エネルギー研究所 | 半導体素子、発光装置及び電気機器 |
| WO2007043493A1 (en) | 2005-10-14 | 2007-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8149346B2 (en) | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP5082385B2 (ja) * | 2006-11-01 | 2012-11-28 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
| GB2448174B (en) * | 2007-04-04 | 2009-12-09 | Cambridge Display Tech Ltd | Organic thin film transistors |
| US9082857B2 (en) | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| CN102742014B (zh) * | 2010-01-22 | 2015-06-24 | 株式会社半导体能源研究所 | 半导体装置 |
| CN102763202B (zh) * | 2010-02-19 | 2016-08-03 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| CN103477441B (zh) | 2011-04-18 | 2016-05-18 | 夏普株式会社 | 薄膜晶体管、显示面板和薄膜晶体管的制造方法 |
| KR101960796B1 (ko) * | 2012-03-08 | 2019-07-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터의 제조 방법, 표시 기판의 제조 방법 및 표시 기판 |
| CN102629671B (zh) * | 2012-04-25 | 2015-05-06 | 上海大学 | 硅基微显示器的有机电致发光器件制备方法 |
| KR102039102B1 (ko) * | 2012-12-24 | 2019-11-01 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP2016219452A (ja) * | 2015-05-14 | 2016-12-22 | 富士通株式会社 | 多層基板及び多層基板の製造方法 |
| CN107196619B (zh) * | 2017-05-04 | 2023-05-12 | 杭州左蓝微电子技术有限公司 | 一种薄膜体声波谐振器锲形形状薄膜制备方法及器件 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5493129A (en) * | 1988-06-29 | 1996-02-20 | Hitachi, Ltd. | Thin film transistor structure having increased on-current |
| US5270567A (en) | 1989-09-06 | 1993-12-14 | Casio Computer Co., Ltd. | Thin film transistors without capacitances between electrodes thereof |
| JPH04505832A (ja) * | 1990-10-05 | 1992-10-08 | ゼネラル・エレクトリック・カンパニイ | 改良されたソース／ドレイン接点を持つ薄膜トランジスタ構造 |
| JPH04198923A (ja) * | 1990-11-28 | 1992-07-20 | Mitsubishi Electric Corp | 表示装置の製造方法 |
| JP2862737B2 (ja) * | 1992-09-02 | 1999-03-03 | シャープ株式会社 | 薄膜トランジスタ及びその製造方法 |
| US5691782A (en) * | 1994-07-08 | 1997-11-25 | Sanyo Electric Co., Ltd. | Liquid-crystal display with inter-line short-circuit preventive function and process for producing same |
| JP2776336B2 (ja) * | 1995-09-26 | 1998-07-16 | 日本電気株式会社 | 薄膜トランジスタおよび薄膜トランジスタの製造方法 |
| JP2865039B2 (ja) * | 1995-12-26 | 1999-03-08 | 日本電気株式会社 | 薄膜トランジスタ基板の製造方法 |
| CN1148600C (zh) * | 1996-11-26 | 2004-05-05 | 三星电子株式会社 | 薄膜晶体管基片及其制造方法 |
| JPH10209462A (ja) * | 1997-01-27 | 1998-08-07 | Advanced Display:Kk | 薄膜トランジスタおよびその製法 |
| JPH10282520A (ja) * | 1997-04-03 | 1998-10-23 | Hitachi Ltd | 液晶表示装置 |
| KR100262953B1 (ko) * | 1997-06-11 | 2000-08-01 | 구본준 | 액정 표시 장치 및 그 액정 표시 장치의 제조 방법 |
| JPH1117188A (ja) * | 1997-06-23 | 1999-01-22 | Sharp Corp | アクティブマトリクス基板 |
| US6369410B1 (en) * | 1997-12-15 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
| US6259119B1 (en) * | 1997-12-18 | 2001-07-10 | Lg. Philips Lcd Co, Ltd. | Liquid crystal display and method of manufacturing the same |
| KR100301803B1 (ko) * | 1998-06-05 | 2001-09-22 | 김영환 | 박막트랜지스터 및 그의 제조방법 |
| JP2001094238A (ja) * | 1999-07-16 | 2001-04-06 | Sharp Corp | 金属配線の製造方法およびその金属配線を備えた配線基板 |
| GB9919913D0 (en) * | 1999-08-24 | 1999-10-27 | Koninkl Philips Electronics Nv | Thin-film transistors and method for producing the same |
-
2000
- 2000-05-23 JP JP2000151234A patent/JP4630420B2/ja not_active Expired - Fee Related
-
2001
- 2001-05-08 KR KR1020027000860A patent/KR100765305B1/ko not_active Expired - Lifetime
- 2001-05-08 DE DE60124704T patent/DE60124704T2/de not_active Expired - Lifetime
- 2001-05-08 EP EP01933947A patent/EP1290723B1/de not_active Expired - Lifetime
- 2001-05-08 WO PCT/EP2001/005261 patent/WO2001091172A2/en not_active Ceased
- 2001-05-08 AT AT01933947T patent/ATE346380T1/de not_active IP Right Cessation
- 2001-05-08 CN CNB018021484A patent/CN100429754C/zh not_active Expired - Fee Related
- 2001-05-21 US US09/861,939 patent/US6693000B2/en not_active Expired - Lifetime
-
2003
- 2003-12-03 US US10/726,831 patent/US6768134B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN100429754C (zh) | 2008-10-29 |
| DE60124704D1 (de) | 2007-01-04 |
| US6768134B2 (en) | 2004-07-27 |
| US6693000B2 (en) | 2004-02-17 |
| CN1630938A (zh) | 2005-06-22 |
| JP4630420B2 (ja) | 2011-02-09 |
| WO2001091172A2 (en) | 2001-11-29 |
| JP2001332735A (ja) | 2001-11-30 |
| EP1290723A2 (de) | 2003-03-12 |
| EP1290723B1 (de) | 2006-11-22 |
| DE60124704T2 (de) | 2007-03-15 |
| US20040082123A1 (en) | 2004-04-29 |
| US20020048863A1 (en) | 2002-04-25 |
| WO2001091172A3 (en) | 2002-03-21 |
| KR100765305B1 (ko) | 2007-10-10 |
| KR20020032533A (ko) | 2002-05-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |