ATE347186T1 - Verfahren und vorrichtung zur abstimmbaren wellenlängenwandlung mittels eines bragg-gitters und laser in einem halbleitersubstrat - Google Patents

Verfahren und vorrichtung zur abstimmbaren wellenlängenwandlung mittels eines bragg-gitters und laser in einem halbleitersubstrat

Info

Publication number
ATE347186T1
ATE347186T1 AT03728956T AT03728956T ATE347186T1 AT E347186 T1 ATE347186 T1 AT E347186T1 AT 03728956 T AT03728956 T AT 03728956T AT 03728956 T AT03728956 T AT 03728956T AT E347186 T1 ATE347186 T1 AT E347186T1
Authority
AT
Austria
Prior art keywords
wavelength
optical signal
semiconductor substrate
laser
wavelength conversion
Prior art date
Application number
AT03728956T
Other languages
English (en)
Inventor
Ansheng Liu
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE347186T1 publication Critical patent/ATE347186T1/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5054—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
AT03728956T 2002-06-13 2003-05-15 Verfahren und vorrichtung zur abstimmbaren wellenlängenwandlung mittels eines bragg-gitters und laser in einem halbleitersubstrat ATE347186T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/171,731 US6788727B2 (en) 2002-06-13 2002-06-13 Method and apparatus for tunable wavelength conversion using a bragg grating and a laser in a semiconductor substrate

Publications (1)

Publication Number Publication Date
ATE347186T1 true ATE347186T1 (de) 2006-12-15

Family

ID=29732842

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03728956T ATE347186T1 (de) 2002-06-13 2003-05-15 Verfahren und vorrichtung zur abstimmbaren wellenlängenwandlung mittels eines bragg-gitters und laser in einem halbleitersubstrat

Country Status (9)

Country Link
US (1) US6788727B2 (de)
EP (1) EP1512205B1 (de)
JP (1) JP4299240B2 (de)
CN (1) CN100344034C (de)
AT (1) ATE347186T1 (de)
AU (1) AU2003234614A1 (de)
DE (1) DE60310068T2 (de)
TW (1) TWI242657B (de)
WO (1) WO2003107498A1 (de)

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Also Published As

Publication number Publication date
EP1512205B1 (de) 2006-11-29
DE60310068D1 (de) 2007-01-11
EP1512205A1 (de) 2005-03-09
DE60310068T2 (de) 2007-07-05
TWI242657B (en) 2005-11-01
AU2003234614A1 (en) 2003-12-31
JP2005525707A (ja) 2005-08-25
US6788727B2 (en) 2004-09-07
US20030231686A1 (en) 2003-12-18
TW200405049A (en) 2004-04-01
WO2003107498A1 (en) 2003-12-24
JP4299240B2 (ja) 2009-07-22
CN100344034C (zh) 2007-10-17
CN1659752A (zh) 2005-08-24

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