ATE353944T1 - Poliermittel mit leitfähigem polymer - Google Patents

Poliermittel mit leitfähigem polymer

Info

Publication number
ATE353944T1
ATE353944T1 AT03765233T AT03765233T ATE353944T1 AT E353944 T1 ATE353944 T1 AT E353944T1 AT 03765233 T AT03765233 T AT 03765233T AT 03765233 T AT03765233 T AT 03765233T AT E353944 T1 ATE353944 T1 AT E353944T1
Authority
AT
Austria
Prior art keywords
polish
conductive polymer
abrasive
oxidizing
substrate
Prior art date
Application number
AT03765233T
Other languages
English (en)
Inventor
Isaac K Cherian
Jiang Zhang
Fred F Sun
Shumin Wang
Eric H Klingenberg
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of ATE353944T1 publication Critical patent/ATE353944T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G17/00—Compounds of germanium
    • C01G17/02—Germanium dioxide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/04—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00—Compounds of zirconium
    • C01G25/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
AT03765233T 2002-07-19 2003-06-25 Poliermittel mit leitfähigem polymer ATE353944T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/199,704 US6811474B2 (en) 2002-07-19 2002-07-19 Polishing composition containing conducting polymer

Publications (1)

Publication Number Publication Date
ATE353944T1 true ATE353944T1 (de) 2007-03-15

Family

ID=30443383

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03765233T ATE353944T1 (de) 2002-07-19 2003-06-25 Poliermittel mit leitfähigem polymer

Country Status (10)

Country Link
US (1) US6811474B2 (de)
EP (1) EP1556455B1 (de)
JP (1) JP4791037B2 (de)
KR (1) KR100987895B1 (de)
CN (1) CN1292034C (de)
AT (1) ATE353944T1 (de)
AU (1) AU2003242942A1 (de)
DE (1) DE60311855T2 (de)
TW (1) TWI233856B (de)
WO (1) WO2004009719A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884144B2 (en) * 2002-08-16 2005-04-26 Micron Technology, Inc. Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers
CN100377310C (zh) * 2003-01-31 2008-03-26 日立化成工业株式会社 Cmp研磨剂以及研磨方法
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
IL154783A0 (en) * 2003-03-06 2003-10-31 J G Systems Inc Chemical-mechanical polishing composition based on cupric oxidizing compounds
JP4801326B2 (ja) * 2004-05-06 2011-10-26 三井化学株式会社 研磨用スラリー
US20060089095A1 (en) 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20070037491A1 (en) * 2005-08-12 2007-02-15 Yuzhuo Li Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
WO2009018119A2 (en) 2007-07-27 2009-02-05 R Tree Innovations, Llc Inter-body implantation system and method
JP5436770B2 (ja) * 2007-11-30 2014-03-05 三菱レイヨン株式会社 導電性研磨パッドおよびその製造方法
KR101428052B1 (ko) * 2007-12-13 2014-08-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20100004181A (ko) * 2008-07-03 2010-01-13 삼성전자주식회사 화학 기계적 연마용 슬러리 조성물, 이의 제조 방법 및화학 기계적 연마방법
JP5699143B2 (ja) 2009-07-09 2015-04-08 アール ツリー イノベーションズ エルエルシー 可撓性を有する椎体間装置
CN102967632B (zh) * 2012-11-30 2016-01-20 淄博包钢灵芝稀土高科技股份有限公司 用电导率指导抛光粉生产和产品质量控制的方法
CN105448817B (zh) * 2014-09-29 2020-05-19 盛美半导体设备(上海)股份有限公司 一种电化学抛光金属互连晶圆结构的方法
CN104278061A (zh) * 2014-10-01 2015-01-14 青岛科技大学 一种生产氟苯基甲基丙酸甲酯的产朊酵母还原法
CN104650740B (zh) * 2014-12-10 2017-07-14 深圳市力合材料有限公司 一种可实现快速稳定抛光的抛光液
US10294399B2 (en) * 2017-01-05 2019-05-21 Cabot Microelectronics Corporation Composition and method for polishing silicon carbide
JP2022188798A (ja) * 2021-06-10 2022-12-22 三菱ケミカル株式会社 研磨組成物
JP2024089973A (ja) * 2022-12-22 2024-07-04 信越ポリマー株式会社 研磨用分散液

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0322721B1 (de) 1987-12-29 1993-10-06 E.I. Du Pont De Nemours And Company Feine Polierzusammensetzung für Plaketten
US5352277A (en) 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5264010A (en) 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
MY113454A (en) 1995-06-01 2002-02-28 Rodel Inc Compositions for polishing silicon wafers and methods
WO1996038262A1 (en) * 1995-06-01 1996-12-05 Rodel, Inc. Compositions for polishing silicon wafers and methods
US5860848A (en) 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
EP1011922B1 (de) 1997-04-18 2002-11-06 Cabot Microelectronics Corporation Polierkissen fur einen halbleitersubstrat
US6126532A (en) 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
JPH11162910A (ja) 1997-11-25 1999-06-18 Sumitomo Chem Co Ltd 半導体装置製造用研磨剤及び研磨方法
US6117000A (en) 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
US6468785B1 (en) * 1999-02-19 2002-10-22 New Mexico State University Technology Transfer Corporation Doped conducting polymers applications and methods
EP1691401B1 (de) * 1999-06-18 2012-06-13 Hitachi Chemical Co., Ltd. Verfahren ein substrat zu polieren unter verwendung eines cmp schleifmittels
TW499471B (en) 1999-09-01 2002-08-21 Eternal Chemical Co Ltd Chemical mechanical/abrasive composition for semiconductor processing
US6348076B1 (en) 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6379223B1 (en) 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
JP3910785B2 (ja) * 2000-06-30 2007-04-25 株式会社東芝 化学機械研磨用スラリーおよび半導体装置の製造方法
JP4972829B2 (ja) * 2001-06-28 2012-07-11 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法

Also Published As

Publication number Publication date
WO2004009719A1 (en) 2004-01-29
US20040014400A1 (en) 2004-01-22
JP4791037B2 (ja) 2011-10-12
US6811474B2 (en) 2004-11-02
EP1556455B1 (de) 2007-02-14
KR20050026489A (ko) 2005-03-15
TWI233856B (en) 2005-06-11
JP2006500762A (ja) 2006-01-05
AU2003242942A1 (en) 2004-02-09
CN1668714A (zh) 2005-09-14
DE60311855T2 (de) 2007-11-22
KR100987895B1 (ko) 2010-10-13
DE60311855D1 (de) 2007-03-29
EP1556455A1 (de) 2005-07-27
CN1292034C (zh) 2006-12-27
TW200408495A (en) 2004-06-01

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