ATE355606T1 - Veränderbarer gasionenclusterstrahl zur glättung von oberflächen - Google Patents
Veränderbarer gasionenclusterstrahl zur glättung von oberflächenInfo
- Publication number
- ATE355606T1 ATE355606T1 AT00947375T AT00947375T ATE355606T1 AT E355606 T1 ATE355606 T1 AT E355606T1 AT 00947375 T AT00947375 T AT 00947375T AT 00947375 T AT00947375 T AT 00947375T AT E355606 T1 ATE355606 T1 AT E355606T1
- Authority
- AT
- Austria
- Prior art keywords
- workpiece
- gasion
- modifiable
- minimum
- cluster jet
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0812—Ionized cluster beam [ICB] sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/04—Planarisation of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14452499P | 1999-07-19 | 1999-07-19 | |
| US09/412,949 US6375790B1 (en) | 1999-07-19 | 1999-10-05 | Adaptive GCIB for smoothing surfaces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE355606T1 true ATE355606T1 (de) | 2006-03-15 |
Family
ID=26842080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00947375T ATE355606T1 (de) | 1999-07-19 | 2000-07-14 | Veränderbarer gasionenclusterstrahl zur glättung von oberflächen |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6375790B1 (de) |
| EP (1) | EP1200980B8 (de) |
| JP (1) | JP4799787B2 (de) |
| AT (1) | ATE355606T1 (de) |
| DE (1) | DE60033664T2 (de) |
| WO (1) | WO2001006538A1 (de) |
Families Citing this family (78)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3352842B2 (ja) * | 1994-09-06 | 2002-12-03 | 科学技術振興事業団 | ガスクラスターイオンビームによる薄膜形成方法 |
| US6331227B1 (en) * | 1999-12-14 | 2001-12-18 | Epion Corporation | Enhanced etching/smoothing of dielectric surfaces |
| EP1303866B1 (de) * | 2000-07-10 | 2009-12-09 | TEL Epion Inc. | Vorrichtung und verfahren zur verbesserung von dünnschichten mittels gas-cluster-ionenstrahlbearbeitung |
| US20070042580A1 (en) * | 2000-08-10 | 2007-02-22 | Amir Al-Bayati | Ion implanted insulator material with reduced dielectric constant |
| US7223676B2 (en) * | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
| US7294563B2 (en) * | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
| US6939434B2 (en) * | 2000-08-11 | 2005-09-06 | Applied Materials, Inc. | Externally excited torroidal plasma source with magnetic control of ion distribution |
| US7166524B2 (en) * | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
| US7183177B2 (en) * | 2000-08-11 | 2007-02-27 | Applied Materials, Inc. | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement |
| US7137354B2 (en) * | 2000-08-11 | 2006-11-21 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage |
| US7320734B2 (en) * | 2000-08-11 | 2008-01-22 | Applied Materials, Inc. | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage |
| US7303982B2 (en) * | 2000-08-11 | 2007-12-04 | Applied Materials, Inc. | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage |
| US6614576B2 (en) * | 2000-12-15 | 2003-09-02 | Texas Instruments Incorporated | Surface micro-planarization for enhanced optical efficiency and pixel performance in SLM devices |
| AU2002308659A1 (en) * | 2001-05-09 | 2002-11-18 | Epion Corporation | Method and system for improving the effectiveness of artificial joints by the application of gas cluster ion beam technology |
| US7067849B2 (en) | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
| US6812147B2 (en) * | 2001-10-11 | 2004-11-02 | Epion Corporation | GCIB processing to improve interconnection vias and improved interconnection via |
| US6949395B2 (en) * | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
| US7148520B2 (en) | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
| JP3881562B2 (ja) * | 2002-02-22 | 2007-02-14 | 三井造船株式会社 | SiCモニタウェハ製造方法 |
| US20030224620A1 (en) * | 2002-05-31 | 2003-12-04 | Kools Jacques C.S. | Method and apparatus for smoothing surfaces on an atomic scale |
| US20040060899A1 (en) * | 2002-10-01 | 2004-04-01 | Applied Materials, Inc. | Apparatuses and methods for treating a silicon film |
| US6833322B2 (en) * | 2002-10-17 | 2004-12-21 | Applied Materials, Inc. | Apparatuses and methods for depositing an oxide film |
| FR2846788B1 (fr) * | 2002-10-30 | 2005-06-17 | Procede de fabrication de substrats demontables | |
| US7410890B2 (en) * | 2002-12-12 | 2008-08-12 | Tel Epion Inc. | Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation |
| US20040137158A1 (en) * | 2003-01-15 | 2004-07-15 | Kools Jacques Constant Stefan | Method for preparing a noble metal surface |
| FR2856677B1 (fr) * | 2003-06-27 | 2006-12-01 | Saint Gobain | Substrat revetu d'une couche dielectrique et procede pour sa fabrication |
| FR2857467B1 (fr) * | 2003-07-09 | 2005-08-19 | Saint Gobain | Dispositif electrocommandable a proprietes optiques et/ou energetiques variables |
| CN100440450C (zh) * | 2003-09-30 | 2008-12-03 | 日本航空电子工业株式会社 | 固体表面平坦化方法及其装置 |
| JP3994111B2 (ja) * | 2003-09-30 | 2007-10-17 | 日本航空電子工業株式会社 | 固体表面の平坦化方法及びその装置 |
| JP3816484B2 (ja) * | 2003-12-15 | 2006-08-30 | 日本航空電子工業株式会社 | ドライエッチング方法 |
| US6872669B1 (en) | 2003-12-19 | 2005-03-29 | Texas Instruments Incorporated | PZT (111) texture through Ir texture improvement |
| US20050181239A1 (en) * | 2004-02-12 | 2005-08-18 | Seagate Technology Llc | Granular magnetic recording media with improved corrosion resistance by pre-carbon overcoat ion etching |
| US7060989B2 (en) * | 2004-03-19 | 2006-06-13 | Epion Corporation | Method and apparatus for improved processing with a gas-cluster ion beam |
| JP2006089844A (ja) * | 2004-09-27 | 2006-04-06 | Olympus Corp | 超精密研磨方法及び超精密研磨装置 |
| US20060093753A1 (en) * | 2004-10-29 | 2006-05-04 | Nickel Janice H | Method of engineering a property of an interface |
| US7799683B2 (en) * | 2004-11-08 | 2010-09-21 | Tel Epion, Inc. | Copper interconnect wiring and method and apparatus for forming thereof |
| US7405152B2 (en) * | 2005-01-31 | 2008-07-29 | International Business Machines Corporation | Reducing wire erosion during damascene processing |
| US7504135B2 (en) * | 2005-02-03 | 2009-03-17 | Samsung Electronics Co., Ltd | Method of fabricating a manganese diffusion barrier |
| US7186992B2 (en) * | 2005-02-07 | 2007-03-06 | Hewlett-Packard Development Company, L.P. | Method of fabricating a polarizing layer on an interface |
| JP4772344B2 (ja) * | 2005-03-04 | 2011-09-14 | オリンパス株式会社 | 荷電粒子ビーム加工方法および超精密研磨方法 |
| EP1890319B1 (de) * | 2005-05-20 | 2011-03-23 | Japan Aviation Electronics Industry, Limited | Verfahren zur verflachung einer festkörperoberfläche |
| US20070087227A1 (en) * | 2005-10-14 | 2007-04-19 | Seagate Technology Llc | Granular magnetic recording media with improved corrosion resistance by cap layer + pre-covercoat etching |
| US7709344B2 (en) * | 2005-11-22 | 2010-05-04 | International Business Machines Corporation | Integrated circuit fabrication process using gas cluster ion beam etching |
| JP4876672B2 (ja) * | 2006-03-29 | 2012-02-15 | Tdk株式会社 | コンデンサの製造方法 |
| US7691499B2 (en) * | 2006-04-21 | 2010-04-06 | Seagate Technology Llc | Corrosion-resistant granular magnetic media with improved recording performance and methods of manufacturing same |
| JP5160436B2 (ja) * | 2006-10-30 | 2013-03-13 | 日本航空電子工業株式会社 | ガスクラスターイオンビームによる固体表面の平坦化方法 |
| US7670964B2 (en) | 2007-03-22 | 2010-03-02 | Tokyo Electron Limited | Apparatus and methods of forming a gas cluster ion beam using a low-pressure source |
| US7550749B2 (en) * | 2007-03-30 | 2009-06-23 | Tel Epion Inc. | Methods and processing systems for using a gas cluster ion beam to offset systematic non-uniformities in workpieces processed in a process tool |
| US7550748B2 (en) * | 2007-03-30 | 2009-06-23 | Tel Epion, Inc. | Apparatus and methods for systematic non-uniformity correction using a gas cluster ion beam |
| JP4920494B2 (ja) * | 2007-05-25 | 2012-04-18 | エスアイアイ・ナノテクノロジー株式会社 | 試料作成方法 |
| US8293126B2 (en) * | 2007-09-28 | 2012-10-23 | Tel Epion Inc. | Method and system for multi-pass correction of substrate defects |
| US8298432B2 (en) * | 2007-09-28 | 2012-10-30 | Tel Epion Inc. | Method and system for adjusting beam dimension for high-gradient location specific processing |
| US7566342B2 (en) * | 2007-12-27 | 2009-07-28 | Cook Incorporated | Delivery system for medical device |
| WO2009100006A2 (en) * | 2008-01-31 | 2009-08-13 | Exogenesis Corporation | Method and system for improving surgical blades by the application of gas cluster ion beam technology and improved surgical blades |
| JPWO2009131022A1 (ja) * | 2008-04-23 | 2011-08-18 | 株式会社アルバック | 分析方法 |
| US9103031B2 (en) * | 2008-06-24 | 2015-08-11 | Tel Epion Inc. | Method and system for growing a thin film using a gas cluster ion beam |
| US20100092802A1 (en) * | 2008-10-15 | 2010-04-15 | Seagate Technology Llc | Multi-step etch process for granular media |
| JP5587550B2 (ja) * | 2008-12-26 | 2014-09-10 | 日本航空電子工業株式会社 | 固体表面の封孔処理方法及び電子部品の製造方法 |
| US8223539B2 (en) | 2010-01-26 | 2012-07-17 | Micron Technology, Inc. | GCIB-treated resistive device |
| JP5031066B2 (ja) * | 2010-05-26 | 2012-09-19 | 兵庫県 | クラスタービーム発生装置、基板処理装置、クラスタービーム発生方法及び基板処理方法 |
| RU2453874C1 (ru) * | 2011-01-11 | 2012-06-20 | Учреждение Российской академии наук Институт физики полупроводников им. А.В.Ржанова Сибирского отделения РАН (ИФП СО РАН) | Способ формирования плоской гладкой поверхности твердотельного материала |
| JP5811540B2 (ja) * | 2011-01-25 | 2015-11-11 | 東京エレクトロン株式会社 | 金属膜の加工方法及び加工装置 |
| US9299852B2 (en) * | 2011-06-16 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5785818B2 (ja) * | 2011-08-26 | 2015-09-30 | 岩谷産業株式会社 | クラスタによる加工方法 |
| US8512586B2 (en) * | 2011-09-01 | 2013-08-20 | Tel Epion Inc. | Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials |
| JP5984424B2 (ja) * | 2012-02-27 | 2016-09-06 | 国立大学法人京都大学 | 基板洗浄方法、基板洗浄装置及び真空処理装置 |
| JP5659181B2 (ja) * | 2012-03-21 | 2015-01-28 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
| US8728947B2 (en) * | 2012-06-08 | 2014-05-20 | Tel Epion Inc. | Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via |
| JP5988025B2 (ja) * | 2012-07-24 | 2016-09-07 | 国立研究開発法人日本原子力研究開発機構 | イオン加速方法、イオン加速装置、及び、イオンビーム照射装置、医療用イオンビーム照射装置、核破砕用イオンビーム照射装置 |
| JP6566683B2 (ja) * | 2014-07-02 | 2019-08-28 | 東京エレクトロン株式会社 | 基板洗浄方法および基板洗浄装置 |
| US10125782B2 (en) | 2014-12-17 | 2018-11-13 | Envaerospace Inc. | Conditioning method of gas turbine engine components for increasing fuel efficiency |
| US10435814B2 (en) * | 2015-10-30 | 2019-10-08 | The Board Of Trustees Of The Leland Stanford Junior University | Single metal crystals |
| US10541172B2 (en) | 2016-08-24 | 2020-01-21 | International Business Machines Corporation | Semiconductor device with reduced contact resistance |
| US10245686B2 (en) | 2016-11-03 | 2019-04-02 | Envaerospace Inc. | Conditioning method of gas turbine engine components for aerodynamic noise reduction |
| JP7179661B2 (ja) * | 2019-03-27 | 2022-11-29 | アルバック・ファイ株式会社 | ガスクラスターイオンビーム装置、分析装置 |
| DE102019111681A1 (de) * | 2019-05-06 | 2020-11-12 | Leibniz-Institut für Oberflächenmodifizierung e.V. | Verfahren zum Glätten von Oberflächen |
| US11680337B2 (en) | 2020-04-03 | 2023-06-20 | Psiquantum, Corp. | Fabrication of films having controlled stoichiometry using molecular beam epitaxy |
| CN113458876A (zh) * | 2021-06-21 | 2021-10-01 | 武汉大学深圳研究院 | 一种团簇能量逐级递减的团簇离子束表面抛光方法 |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1483966A (en) | 1974-10-23 | 1977-08-24 | Sharp Kk | Vapourized-metal cluster ion source and ionized-cluster beam deposition |
| JPS6037525B2 (ja) | 1979-11-19 | 1985-08-27 | 積水化学工業株式会社 | 磁気記録媒体の製造方法 |
| JPS615440A (ja) | 1984-06-19 | 1986-01-11 | Mitsubishi Electric Corp | 磁気テ−プ製造方法 |
| US4559096A (en) | 1984-06-25 | 1985-12-17 | The United States Of America As Represented By The United States Department Of Energy | Method of precisely modifying predetermined surface layers of a workpiece by cluster ion impact therewith |
| US4522886A (en) | 1984-10-09 | 1985-06-11 | Allied Corporation | Method of ion beam synthesis of thin silicon nitride films and resulting articles |
| JPS61210615A (ja) | 1985-03-15 | 1986-09-18 | Komatsu Ltd | 薄膜形成装置 |
| US4762728A (en) | 1985-04-09 | 1988-08-09 | Fairchild Semiconductor Corporation | Low temperature plasma nitridation process and applications of nitride films formed thereby |
| JPS61268016A (ja) | 1985-05-23 | 1986-11-27 | Mitsubishi Electric Corp | レーザーミラー膜の形成方法 |
| JPS62100705A (ja) | 1985-10-28 | 1987-05-11 | Nippon Sheet Glass Co Ltd | 屈折率勾配型平面光導波路の製造方法 |
| US4737637A (en) | 1986-10-15 | 1988-04-12 | Hughes Aircraft Company | Mass separator for ionized cluster beam |
| US4740267A (en) | 1987-02-20 | 1988-04-26 | Hughes Aircraft Company | Energy intensive surface reactions using a cluster beam |
| US4833319A (en) | 1987-02-27 | 1989-05-23 | Hughes Aircraft Company | Carrier gas cluster source for thermally conditioned clusters |
| JPS63270458A (ja) | 1987-04-27 | 1988-11-08 | Mitsubishi Electric Corp | 化合物薄膜形成装置 |
| DE3809734C1 (de) | 1988-03-23 | 1989-05-03 | Helmut Prof. Dr. 7805 Boetzingen De Haberland | |
| US5031408A (en) | 1988-04-19 | 1991-07-16 | The Boeing Company | Film deposition system |
| EP0361460A3 (de) | 1988-09-29 | 1990-08-01 | Sony Corporation | Strukturherstellungsverfahren |
| US5264724A (en) | 1989-02-13 | 1993-11-23 | The University Of Arkansas | Silicon nitride for application as the gate dielectric in MOS devices |
| US4935623A (en) | 1989-06-08 | 1990-06-19 | Hughes Aircraft Company | Production of energetic atom beams |
| US5019712A (en) | 1989-06-08 | 1991-05-28 | Hughes Aircraft Company | Production of focused ion cluster beams |
| JPH03127321A (ja) | 1989-10-12 | 1991-05-30 | Mitsubishi Electric Corp | 磁気記録担体 |
| JPH048507A (ja) | 1990-04-26 | 1992-01-13 | Tokyo Seimitsu Co Ltd | スライシングマシン |
| JPH04155825A (ja) * | 1990-10-19 | 1992-05-28 | Nec Corp | 固体表面の清浄化方法 |
| JP2662321B2 (ja) | 1991-05-31 | 1997-10-08 | 科学技術振興事業団 | 超低速クラスターイオンビームによる表面処理方法 |
| JP2915170B2 (ja) | 1991-06-05 | 1999-07-05 | 三菱電機株式会社 | 薄膜形成装置及び薄膜形成方法 |
| JP3237131B2 (ja) | 1991-07-11 | 2001-12-10 | 住友化学工業株式会社 | 農薬製剤 |
| DE4200235C1 (de) | 1992-01-08 | 1993-05-06 | Hoffmeister, Helmut, Dr., 4400 Muenster, De | |
| KR0126457B1 (ko) | 1992-01-08 | 1997-12-26 | 기타오카 다카시 | 집적회로, 그 제조방법 및 그 박막형성장치 |
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| US5657335A (en) | 1993-11-01 | 1997-08-12 | The Regents, University Of California | P-type gallium nitride |
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-
1999
- 1999-10-05 US US09/412,949 patent/US6375790B1/en not_active Expired - Lifetime
-
2000
- 2000-07-14 DE DE60033664T patent/DE60033664T2/de not_active Expired - Fee Related
- 2000-07-14 JP JP2001511710A patent/JP4799787B2/ja not_active Expired - Lifetime
- 2000-07-14 WO PCT/US2000/019249 patent/WO2001006538A1/en not_active Ceased
- 2000-07-14 AT AT00947375T patent/ATE355606T1/de not_active IP Right Cessation
- 2000-07-14 EP EP00947375A patent/EP1200980B8/de not_active Expired - Lifetime
-
2001
- 2001-10-31 US US09/999,099 patent/US6805807B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE60033664T2 (de) | 2008-02-07 |
| EP1200980B8 (de) | 2007-05-23 |
| EP1200980B1 (de) | 2007-02-28 |
| DE60033664D1 (de) | 2007-04-12 |
| WO2001006538A1 (en) | 2001-01-25 |
| EP1200980A1 (de) | 2002-05-02 |
| JP4799787B2 (ja) | 2011-10-26 |
| US6805807B2 (en) | 2004-10-19 |
| US20020139772A1 (en) | 2002-10-03 |
| JP2003505867A (ja) | 2003-02-12 |
| US6375790B1 (en) | 2002-04-23 |
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