ATE360890T1 - Stapelkondensator und verfahren zur herstellung - Google Patents

Stapelkondensator und verfahren zur herstellung

Info

Publication number
ATE360890T1
ATE360890T1 AT01000026T AT01000026T ATE360890T1 AT E360890 T1 ATE360890 T1 AT E360890T1 AT 01000026 T AT01000026 T AT 01000026T AT 01000026 T AT01000026 T AT 01000026T AT E360890 T1 ATE360890 T1 AT E360890T1
Authority
AT
Austria
Prior art keywords
polysilicon layer
type
manufacturing
layer
doped
Prior art date
Application number
AT01000026T
Other languages
English (en)
Inventor
Douglas D Coolbaugh
James Stuart Dunn
Onge Stephen Arthur St
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE360890T1 publication Critical patent/ATE360890T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
AT01000026T 2000-04-17 2001-02-22 Stapelkondensator und verfahren zur herstellung ATE360890T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/551,168 US6507063B2 (en) 2000-04-17 2000-04-17 Poly-poly/MOS capacitor having a gate encapsulating first electrode layer

Publications (1)

Publication Number Publication Date
ATE360890T1 true ATE360890T1 (de) 2007-05-15

Family

ID=24200135

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01000026T ATE360890T1 (de) 2000-04-17 2001-02-22 Stapelkondensator und verfahren zur herstellung

Country Status (12)

Country Link
US (2) US6507063B2 (de)
EP (1) EP1148557B1 (de)
JP (1) JP2002009163A (de)
KR (1) KR20010096611A (de)
CN (1) CN1184698C (de)
AT (1) ATE360890T1 (de)
DE (1) DE60128028T2 (de)
ES (1) ES2281379T3 (de)
IL (1) IL140565A0 (de)
MY (1) MY133800A (de)
SG (1) SG107561A1 (de)
TW (1) TW506043B (de)

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JP2003224204A (ja) * 2002-01-29 2003-08-08 Mitsubishi Electric Corp キャパシタを有する半導体装置
KR100451517B1 (ko) * 2002-07-19 2004-10-06 주식회사 하이닉스반도체 반도체소자의 캐패시터 제조방법
JP2004228188A (ja) * 2003-01-21 2004-08-12 Renesas Technology Corp 半導体装置
TWI233689B (en) * 2003-04-14 2005-06-01 Samsung Electronics Co Ltd Capacitors of semiconductor devices including silicon-germanium and metallic electrodes and methods of fabricating the same
DE10324066A1 (de) * 2003-05-27 2004-12-30 Texas Instruments Deutschland Gmbh Stapelkondensator und Verfahren zur Herstellung eines solchen
CN1327525C (zh) * 2003-12-24 2007-07-18 上海宏力半导体制造有限公司 测量电容的结构与方法
EP1560269A1 (de) * 2004-01-30 2005-08-03 Alcatel MOS-Kondensator in einer integrierten Halbleiterschaltung
US7709313B2 (en) * 2005-07-19 2010-05-04 International Business Machines Corporation High performance capacitors in planar back gates CMOS
CN100446254C (zh) * 2005-12-15 2008-12-24 上海华虹Nec电子有限公司 半导体电容
US7821053B2 (en) * 2006-11-15 2010-10-26 International Business Machines Corporation Tunable capacitor
US7670920B2 (en) 2007-04-09 2010-03-02 Texas Instruments Incorporated Methods and apparatus for forming a polysilicon capacitor
KR100979001B1 (ko) * 2007-12-27 2010-08-30 주식회사 동부하이텍 커패시터 및 커패시터 제조 방법
CN102088001B (zh) * 2009-12-04 2013-10-09 中芯国际集成电路制造(上海)有限公司 快闪存储器及其制作方法
US8318575B2 (en) 2011-02-07 2012-11-27 Infineon Technologies Ag Compressive polycrystalline silicon film and method of manufacture thereof
US9112060B2 (en) 2011-03-23 2015-08-18 Freescale Semiconductor, Inc. Low-leakage, high-capacitance capacitor structures and method of making
US11009788B2 (en) 2011-09-09 2021-05-18 Centera Photonics Inc. Method for manufacturing optical electrical module and substrate of an optical electrical module
US9581772B2 (en) 2011-09-09 2017-02-28 Centera Photonics Inc. Optical electrical module used for optical communication
US9379202B2 (en) * 2012-11-12 2016-06-28 Nvidia Corporation Decoupling capacitors for interposers
CN104851776A (zh) * 2014-02-14 2015-08-19 中芯国际集成电路制造(上海)有限公司 MiS电容器结构及其制造方法
JP2016162904A (ja) * 2015-03-03 2016-09-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9905707B1 (en) * 2016-10-28 2018-02-27 Globalfoundries Inc. MOS capacitive structure of reduced capacitance variability
CN111180394B (zh) * 2018-11-13 2022-09-09 无锡华润上华科技有限公司 形成有电容器的半导体器件及其制造方法
KR102775519B1 (ko) 2019-03-26 2025-03-06 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 제조방법
US11257940B2 (en) * 2020-01-14 2022-02-22 Cree, Inc. Group III HEMT and capacitor that share structural features
CN115223985A (zh) 2021-04-21 2022-10-21 联华电子股份有限公司 电容器结构的制造方法

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NL191683C (nl) * 1977-02-21 1996-02-05 Zaidan Hojin Handotai Kenkyu Halfgeleidergeheugenschakeling.
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KR940016805A (ko) * 1992-12-31 1994-07-25 김주용 반도체 소자의 적층 캐패시터 제조 방법
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
US5663088A (en) 1995-05-19 1997-09-02 Micron Technology, Inc. Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer
DE19531629C1 (de) * 1995-08-28 1997-01-09 Siemens Ag Verfahren zur Herstellung einer EEPROM-Halbleiterstruktur
US5602051A (en) 1995-10-06 1997-02-11 International Business Machines Corporation Method of making stacked electrical device having regions of electrical isolation and electrical connection on a given stack level
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Also Published As

Publication number Publication date
MY133800A (en) 2007-11-30
ES2281379T3 (es) 2007-10-01
US6833299B2 (en) 2004-12-21
SG107561A1 (en) 2004-12-29
EP1148557B1 (de) 2007-04-25
US20020089008A1 (en) 2002-07-11
CN1318869A (zh) 2001-10-24
US6507063B2 (en) 2003-01-14
CN1184698C (zh) 2005-01-12
EP1148557A2 (de) 2001-10-24
DE60128028T2 (de) 2008-01-03
TW506043B (en) 2002-10-11
JP2002009163A (ja) 2002-01-11
DE60128028D1 (de) 2007-06-06
KR20010096611A (ko) 2001-11-07
IL140565A0 (en) 2002-02-10
EP1148557A3 (de) 2003-08-27
US20030092239A1 (en) 2003-05-15

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