ATE363079T1 - Leiterrahmen mit niedrigem temperaturkoeffizienten für integrierte schaltungen sowie integrierte schaltungen mit einem solchen leiterrahmen - Google Patents
Leiterrahmen mit niedrigem temperaturkoeffizienten für integrierte schaltungen sowie integrierte schaltungen mit einem solchen leiterrahmenInfo
- Publication number
- ATE363079T1 ATE363079T1 AT01650024T AT01650024T ATE363079T1 AT E363079 T1 ATE363079 T1 AT E363079T1 AT 01650024 T AT01650024 T AT 01650024T AT 01650024 T AT01650024 T AT 01650024T AT E363079 T1 ATE363079 T1 AT E363079T1
- Authority
- AT
- Austria
- Prior art keywords
- integrated circuits
- conductor frame
- leadframe
- integrated
- resistive element
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Measuring voltage only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Measuring current only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Details Of Resistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/515,300 US6225684B1 (en) | 2000-02-29 | 2000-02-29 | Low temperature coefficient leadframe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE363079T1 true ATE363079T1 (de) | 2007-06-15 |
Family
ID=24050780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01650024T ATE363079T1 (de) | 2000-02-29 | 2001-02-28 | Leiterrahmen mit niedrigem temperaturkoeffizienten für integrierte schaltungen sowie integrierte schaltungen mit einem solchen leiterrahmen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6225684B1 (de) |
| EP (1) | EP1150129B1 (de) |
| JP (1) | JP3429750B2 (de) |
| AT (1) | ATE363079T1 (de) |
| DE (1) | DE60128510T2 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10342990A1 (de) * | 2003-09-17 | 2005-05-25 | Infineon Technologies Ag | Verfahren und Vorrichtung zur Ermittlung des Laststromes durch eine Last |
| DE102005019569A1 (de) * | 2005-04-27 | 2006-11-09 | Siemens Ag | Shunt, Batteriesensor und Verfahren zur Herstellung eines Shunts |
| US8324721B2 (en) * | 2008-07-01 | 2012-12-04 | Texas Instruments Incorporated | Integrated shunt resistor with external contact in a semiconductor package |
| US7847391B2 (en) * | 2008-07-01 | 2010-12-07 | Texas Instruments Incorporated | Manufacturing method for integrating a shunt resistor into a semiconductor package |
| US8446159B2 (en) * | 2010-06-30 | 2013-05-21 | Linear Technology Corporation | Current sensor using leadframe as sensing element |
| JP5793995B2 (ja) * | 2011-06-28 | 2015-10-14 | トヨタ自動車株式会社 | リードフレーム、及び、パワーモジュール |
| US9523720B2 (en) * | 2013-03-15 | 2016-12-20 | Infineon Technologies Ag | Multiple current sensor device, a multiple current shunt device and a method for providing a sensor signal |
| DE102013009726A1 (de) | 2013-06-10 | 2014-12-11 | Isabellenhütte Heusler Gmbh & Co. Kg | Stanzteil zur Herstellung eines elektrischen Widerstands, Stromsensor und entsprechendes Herstellungsverfahren |
| US9070392B1 (en) | 2014-12-16 | 2015-06-30 | Hutchinson Technology Incorporated | Piezoelectric disk drive suspension motors having plated stiffeners |
| US9734852B2 (en) | 2015-06-30 | 2017-08-15 | Hutchinson Technology Incorporated | Disk drive head suspension structures having improved gold-dielectric joint reliability |
| DE102016201447A1 (de) * | 2016-02-01 | 2017-08-03 | Continental Automotive Gmbh | Verbindung zwischen einer Wicklung und einer Platine |
| US10242938B2 (en) | 2017-05-16 | 2019-03-26 | Infineon Technologies Americas Corp. | Integrated shunt in circuit package |
| US20230221356A1 (en) * | 2022-01-07 | 2023-07-13 | Semiconductor Components Industries, Llc | Current sense circuit having a temperature compensated response |
| CN114823598A (zh) * | 2022-04-01 | 2022-07-29 | 上海兴感半导体有限公司 | 引线框架、封装结构及封装方法 |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4021277A (en) | 1972-12-07 | 1977-05-03 | Sprague Electric Company | Method of forming thin film resistor |
| US3922712A (en) | 1974-05-01 | 1975-11-25 | Gen Motors Corp | Plastic power semiconductor flip chip package |
| US4019168A (en) | 1975-08-21 | 1977-04-19 | Airco, Inc. | Bilayer thin film resistor and method for manufacture |
| US4104607A (en) | 1977-03-14 | 1978-08-01 | The United States Of America As Represented By The Secretary Of The Navy | Zero temperature coefficient of resistance bi-film resistor |
| US4141029A (en) | 1977-12-30 | 1979-02-20 | Texas Instruments Incorporated | Integrated circuit device |
| JPS54182848U (de) * | 1978-06-16 | 1979-12-25 | ||
| US4591821A (en) | 1981-06-30 | 1986-05-27 | Motorola, Inc. | Chromium-silicon-nitrogen thin film resistor and apparatus |
| JPS59177950A (ja) | 1983-03-29 | 1984-10-08 | Toshiba Corp | リ−ドフレ−ム |
| US4579600A (en) | 1983-06-17 | 1986-04-01 | Texas Instruments Incorporated | Method of making zero temperature coefficient of resistance resistors |
| NL8500433A (nl) | 1985-02-15 | 1986-09-01 | Philips Nv | Chipweerstand en werkwijze voor de vervaardiging ervan. |
| US4749548A (en) | 1985-09-13 | 1988-06-07 | Mitsubishi Kinzoku Kabushiki Kaisha | Copper alloy lead material for use in semiconductor device |
| DE3717246A1 (de) | 1986-05-23 | 1987-11-26 | Mitsubishi Electric Corp | Material auf nickelbasis fuer eine halbleiteranordnung |
| US4726232A (en) | 1986-06-02 | 1988-02-23 | Gould Inc. | Temperature coefficient compensated pressure transducer |
| NL8601432A (nl) | 1986-06-04 | 1988-01-04 | Philips Nv | Metaalfilmweerstanden. |
| US4808009A (en) | 1986-06-05 | 1989-02-28 | Rosemount, Inc. | Integrated semiconductor resistance temperature sensor and resistive heater |
| JPH0674479B2 (ja) | 1986-10-09 | 1994-09-21 | スカイアルミニウム株式会社 | リードフレーム、コネクタもしくはスイッチ用導電圧延材料 |
| US4803457A (en) | 1987-02-27 | 1989-02-07 | Chapel Jr Roy W | Compound resistor and manufacturing method therefore |
| US4888449A (en) | 1988-01-04 | 1989-12-19 | Olin Corporation | Semiconductor package |
| JPH0390872A (ja) * | 1989-09-01 | 1991-04-16 | Toshiba Corp | 半導体装置 |
| US5023589A (en) | 1989-09-08 | 1991-06-11 | Electro-Films, Inc. | Gold diffusion thin film resistors and process |
| US5041191A (en) | 1989-11-13 | 1991-08-20 | Rockwell International Corporation | Diffusion barrier for thin film hybrid circuits |
| KR920000127A (ko) | 1990-02-26 | 1992-01-10 | 미다 가쓰시게 | 반도체 패키지와 그것을 위한 리드프레임 |
| DE69119952T2 (de) | 1990-03-23 | 1997-01-02 | Motorola Inc | Oberflächenmontierbare Halbleitervorrichtung mit selbstbeladenen Lötverbindungen |
| EP0537982A2 (de) | 1991-10-14 | 1993-04-21 | Fujitsu Limited | Halbleiteranordnung mit verbesserten Leitern |
| US5343073A (en) | 1992-01-17 | 1994-08-30 | Olin Corporation | Lead frames having a chromium and zinc alloy coating |
| JPH0653417A (ja) | 1992-05-19 | 1994-02-25 | Texas Instr Inc <Ti> | 抵抗器回路およびそれを形成する方法 |
| US5546048A (en) | 1992-09-04 | 1996-08-13 | Hitachi, Ltd. | Amplifier and display apparatus employing the same |
| US5567358A (en) | 1993-01-26 | 1996-10-22 | Sumitomo Metal Mining Company Limited | Thick film resistor composition |
| JP3515141B2 (ja) | 1993-05-18 | 2004-04-05 | 株式会社東芝 | 半導体パッケージ |
| US5329159A (en) | 1993-08-03 | 1994-07-12 | Motorola, Inc. | Semiconductor device employing an aluminum clad leadframe |
| US5585776A (en) | 1993-11-09 | 1996-12-17 | Research Foundation Of The State University Of Ny | Thin film resistors comprising ruthenium oxide |
| US5489547A (en) | 1994-05-23 | 1996-02-06 | Texas Instruments Incorporated | Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient |
| WO1996006459A1 (en) * | 1994-08-25 | 1996-02-29 | National Semiconductor Corporation | Component stacking in multi-chip semiconductor packages |
| US5498984A (en) | 1994-09-30 | 1996-03-12 | Maxim Integrated Products | High side, current sense amplifier using a symmetric amplifier |
| US5534788A (en) | 1994-12-09 | 1996-07-09 | National Semiconductor Corporation | Integrated resistor for sensing electrical parameters |
| US5734314A (en) | 1996-08-08 | 1998-03-31 | Cts Corporation | Low resistance paints for surge applications using nickel-chromium alloy blended with additional alloys |
| US5804880A (en) | 1996-11-04 | 1998-09-08 | National Semiconductor Corporation | Solder isolating lead frame |
| JP2917964B2 (ja) * | 1997-05-02 | 1999-07-12 | 日本電気株式会社 | 半導体装置構造及びその製造方法 |
| US6091318A (en) * | 1999-06-22 | 2000-07-18 | Dallas Semiconductor Corporation | Integral bump technology sense resistor |
-
2000
- 2000-02-29 US US09/515,300 patent/US6225684B1/en not_active Expired - Lifetime
-
2001
- 2001-02-28 AT AT01650024T patent/ATE363079T1/de not_active IP Right Cessation
- 2001-02-28 EP EP01650024A patent/EP1150129B1/de not_active Expired - Lifetime
- 2001-02-28 JP JP2001056007A patent/JP3429750B2/ja not_active Expired - Fee Related
- 2001-02-28 DE DE60128510T patent/DE60128510T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001284518A (ja) | 2001-10-12 |
| EP1150129A3 (de) | 2004-05-19 |
| DE60128510T2 (de) | 2008-01-24 |
| DE60128510D1 (de) | 2007-07-05 |
| EP1150129A2 (de) | 2001-10-31 |
| US6225684B1 (en) | 2001-05-01 |
| JP3429750B2 (ja) | 2003-07-22 |
| EP1150129B1 (de) | 2007-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |