ATE364227T1 - Verfahren und system zur optimierung der testkosten und deaktivierungsdefekte für scan- und bist-speicher - Google Patents
Verfahren und system zur optimierung der testkosten und deaktivierungsdefekte für scan- und bist-speicherInfo
- Publication number
- ATE364227T1 ATE364227T1 AT02726654T AT02726654T ATE364227T1 AT E364227 T1 ATE364227 T1 AT E364227T1 AT 02726654 T AT02726654 T AT 02726654T AT 02726654 T AT02726654 T AT 02726654T AT E364227 T1 ATE364227 T1 AT E364227T1
- Authority
- AT
- Austria
- Prior art keywords
- memory
- scan
- bist
- integrated circuit
- deactivation
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/32—Serial access; Scan testing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
- G01R31/318533—Reconfiguring for testing, e.g. LSSD, partitioning using scanning techniques, e.g. LSSD, Boundary Scan, JTAG
- G01R31/318544—Scanning methods, algorithms and patterns
- G01R31/318547—Data generators or compressors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
- G01R31/318533—Reconfiguring for testing, e.g. LSSD, partitioning using scanning techniques, e.g. LSSD, Boundary Scan, JTAG
- G01R31/318558—Addressing or selecting of subparts of the device under test
- G01R31/318563—Multiple simultaneous testing of subparts
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
- G11C29/16—Implementation of control logic, e.g. test mode decoders using microprogrammed units, e.g. state machines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C2029/3202—Scan chain
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- Tests Of Electronic Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28291701P | 2001-04-10 | 2001-04-10 | |
| US10/116,128 US20020194558A1 (en) | 2001-04-10 | 2002-04-05 | Method and system to optimize test cost and disable defects for scan and BIST memories |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE364227T1 true ATE364227T1 (de) | 2007-06-15 |
Family
ID=26813916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02726654T ATE364227T1 (de) | 2001-04-10 | 2002-04-09 | Verfahren und system zur optimierung der testkosten und deaktivierungsdefekte für scan- und bist-speicher |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20020194558A1 (de) |
| EP (1) | EP1377981B1 (de) |
| AT (1) | ATE364227T1 (de) |
| DE (1) | DE60220511T2 (de) |
| WO (1) | WO2002084668A1 (de) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7308629B2 (en) | 2004-12-07 | 2007-12-11 | Texas Instruments Incorporated | Addressable tap domain selection circuit with TDI/TDO external terminal |
| WO2002021234A2 (en) | 2000-09-06 | 2002-03-14 | Infineon Technologies Ag | Bist for parallel testing of on-chip memory |
| DE10135583B4 (de) * | 2001-07-20 | 2004-05-06 | Infineon Technologies Ag | Datengenerator zur Erzeugung von Testdaten für wortorientierte Halbleiterspeicher |
| US6853597B2 (en) * | 2001-10-03 | 2005-02-08 | Infineon Technologies Aktiengesellschaft | Integrated circuits with parallel self-testing |
| US7734966B1 (en) | 2002-12-26 | 2010-06-08 | Marvell International Ltd. | Method and system for memory testing and test data reporting during memory testing |
| US7210059B2 (en) * | 2003-08-19 | 2007-04-24 | Micron Technology, Inc. | System and method for on-board diagnostics of memory modules |
| JP4381750B2 (ja) * | 2003-08-28 | 2009-12-09 | 株式会社ルネサステクノロジ | 半導体集積回路 |
| US7310752B2 (en) | 2003-09-12 | 2007-12-18 | Micron Technology, Inc. | System and method for on-board timing margin testing of memory modules |
| JP4533616B2 (ja) * | 2003-10-17 | 2010-09-01 | 株式会社 日立ディスプレイズ | 表示装置 |
| US7120743B2 (en) | 2003-10-20 | 2006-10-10 | Micron Technology, Inc. | Arbitration system and method for memory responses in a hub-based memory system |
| US7216196B2 (en) | 2003-12-29 | 2007-05-08 | Micron Technology, Inc. | Memory hub and method for memory system performance monitoring |
| US7213186B2 (en) | 2004-01-12 | 2007-05-01 | Taiwan Semiconductor Manufacturing Company | Memory built-in self test circuit with full error mapping capability |
| DE102004004808A1 (de) * | 2004-01-30 | 2005-08-25 | Infineon Technologies Ag | Verfahren und Vorrichtung zum Sichern und Einstellen eines Schaltungszustandes einer mikroelektronischen Schaltung |
| US7310748B2 (en) | 2004-06-04 | 2007-12-18 | Micron Technology, Inc. | Memory hub tester interface and method for use thereof |
| US8621304B2 (en) * | 2004-10-07 | 2013-12-31 | Hewlett-Packard Development Company, L.P. | Built-in self-test system and method for an integrated circuit |
| WO2006046711A1 (ja) * | 2004-10-28 | 2006-05-04 | Ipflex Inc. | 再構成可能な論理回路を有するデータ処理装置 |
| US7353437B2 (en) * | 2004-10-29 | 2008-04-01 | Micron Technology, Inc. | System and method for testing a memory for a memory failure exhibited by a failing memory |
| JP4826116B2 (ja) * | 2005-03-25 | 2011-11-30 | 富士通株式会社 | Ram試験装置及び試験方法 |
| US7496809B2 (en) * | 2005-06-10 | 2009-02-24 | Stmicroelectronics Pvt. Ltd. | Integrated scannable interface for testing memory |
| US7308656B1 (en) * | 2005-10-04 | 2007-12-11 | Xilinx, Inc. | Method and apparatus for generating a boundary scan description and model |
| US7484138B2 (en) * | 2006-06-09 | 2009-01-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for improving reliability of memory device |
| US7917825B2 (en) * | 2006-12-15 | 2011-03-29 | Joo-Sang Lee | Method and apparatus for selectively utilizing information within a semiconductor device |
| DE112008000429T5 (de) * | 2007-02-16 | 2009-12-03 | Advantest Corp. | Prüfvorrichtung und Prüfverfahren |
| US7779316B2 (en) * | 2007-12-05 | 2010-08-17 | Oracle America, Inc. | Method of testing memory array at operational speed using scan |
| US7996805B2 (en) * | 2008-01-08 | 2011-08-09 | National Semiconductor Corporation | Method of stitching scan flipflops together to form a scan chain with a reduced wire length |
| US7735045B1 (en) * | 2008-03-12 | 2010-06-08 | Xilinx, Inc. | Method and apparatus for mapping flip-flop logic onto shift register logic |
| KR100989458B1 (ko) * | 2008-05-13 | 2010-10-22 | 주식회사 하이닉스반도체 | 반도체 장치의 카운터 |
| US8127184B2 (en) * | 2008-11-26 | 2012-02-28 | Qualcomm Incorporated | System and method including built-in self test (BIST) circuit to test cache memory |
| US9003251B2 (en) * | 2010-03-16 | 2015-04-07 | Stmicroelectronics International N.V. | Diagnosis flow for read-only memories |
| US20120140541A1 (en) * | 2010-12-02 | 2012-06-07 | Advanced Micro Devices, Inc. | Memory built-in self test scheme for content addressable memory array |
| US8239818B1 (en) * | 2011-04-05 | 2012-08-07 | International Business Machines Corporation | Data structure for describing MBIST architecture |
| CN102799516B (zh) * | 2011-05-21 | 2016-05-04 | 江南大学 | 一种大规模集成电路测试人力成本管理方法 |
| US20130019130A1 (en) | 2011-07-15 | 2013-01-17 | Synopsys Inc. | Testing electronic memories based on fault and test algorithm periodicity |
| US8850280B2 (en) * | 2011-10-28 | 2014-09-30 | Lsi Corporation | Scan enable timing control for testing of scan cells |
| US8769354B2 (en) * | 2012-06-28 | 2014-07-01 | Ememory Technology Inc. | Memory architecture and associated serial direct access circuit |
| EP2693441B8 (de) * | 2012-07-31 | 2015-03-11 | eMemory Technology Inc. | Speicherarchitektur und dazugehörige serielle Direktzugriffsschaltung |
| US8719761B2 (en) * | 2012-09-24 | 2014-05-06 | Candence Design Systems, Inc. | Method and apparatus for optimizing memory-built-in-self test |
| US9165687B2 (en) * | 2013-01-21 | 2015-10-20 | Cisco Technology, Inc. | Methods and apparatus for testing and repairing digital memory circuits |
| US20150074474A1 (en) * | 2013-09-06 | 2015-03-12 | Broadcom Corporation | System and method for on-the-fly incremental memory repair |
| US20150254383A1 (en) * | 2014-02-06 | 2015-09-10 | StarDFX Technologies, Inc. | Method for concurrent simulation to evaluate the test quality of integrated circuits and computer program |
| US10824342B2 (en) | 2014-02-28 | 2020-11-03 | Hewlett Packard Enterprise Development Lp | Mapping mode shift between mapping modes that provides continuous application access to storage, wherein address range is remapped between said modes during data migration and said address range is also utilized bypass through instructions for direct access |
| KR20150130888A (ko) * | 2014-05-14 | 2015-11-24 | 에스케이하이닉스 주식회사 | 셀프 리페어 동작을 수행하는 반도체 메모리 장치 |
| KR101631461B1 (ko) * | 2014-09-30 | 2016-06-17 | 주식회사 네오셈 | 메모리 소자 테스트 장치 및 방법 |
| CN105572573B (zh) * | 2014-10-30 | 2018-08-24 | 国际商业机器公司 | 用于存储器时序测试的扫描链、扫描链构建方法和相应装置 |
| WO2016159930A1 (en) | 2015-03-27 | 2016-10-06 | Hewlett Packard Enterprise Development Lp | File migration to persistent memory |
| CN107209720B (zh) | 2015-04-02 | 2020-10-13 | 慧与发展有限责任合伙企业 | 用于页面高速缓存的系统及方法以及存储介质 |
| US9881693B2 (en) * | 2016-02-16 | 2018-01-30 | Micron Technology, Inc. | Selectors on interface die for memory device |
| US10460822B2 (en) * | 2017-08-23 | 2019-10-29 | Arm Limited | Memory with a controllable I/O functional unit |
| US10408876B2 (en) * | 2018-01-29 | 2019-09-10 | Oracle International Corporation | Memory circuit march testing |
| US10937518B2 (en) | 2018-12-12 | 2021-03-02 | Micron Technology, Inc. | Multiple algorithmic pattern generator testing of a memory device |
| US11080183B2 (en) * | 2019-08-13 | 2021-08-03 | Elite Semiconductor Memory Technology Inc. | Memory chip, memory module and method for pseudo-accessing memory bank thereof |
| US11462295B2 (en) | 2020-04-10 | 2022-10-04 | International Business Machines Corporation | Microchip level shared array repair |
| US11587635B2 (en) * | 2020-09-04 | 2023-02-21 | Micron Technology, Inc. | Selective inhibition of memory |
| US11378623B2 (en) | 2020-12-08 | 2022-07-05 | International Business Machines Corporation | Diagnostic enhancement for multiple instances of identical structures |
| CN114660445A (zh) * | 2020-12-23 | 2022-06-24 | 恩智浦美国有限公司 | 具有嵌入式存储器模块的集成电路 |
| TWI793688B (zh) * | 2021-02-03 | 2023-02-21 | 日商鎧俠股份有限公司 | 半導體積體電路 |
| US11835991B2 (en) | 2021-03-22 | 2023-12-05 | Stmicroelectronics International N.V. | Self-test controller, and associated method |
| CN116030874B (zh) * | 2023-03-24 | 2023-08-18 | 长鑫存储技术有限公司 | 测试方法、装置、电子设备和计算机可读存储介质 |
| CN118782128B (zh) * | 2023-03-31 | 2025-09-26 | 长鑫存储技术有限公司 | 信号生成电路、测试电路及存储器 |
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| US5875153A (en) * | 1997-04-30 | 1999-02-23 | Texas Instruments Incorporated | Internal/external clock option for built-in self test |
| US6014336A (en) * | 1997-04-30 | 2000-01-11 | Texas Instruments Incorporated | Test enable control for built-in self-test |
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| JP2000030483A (ja) * | 1998-07-15 | 2000-01-28 | Mitsubishi Electric Corp | 大規模メモリ用bist回路 |
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| US6553525B1 (en) * | 1999-11-08 | 2003-04-22 | International Business Machines Corporation | Method and apparatus for selectively enabling and disabling functions on a per array basis |
| US6671837B1 (en) * | 2000-06-06 | 2003-12-30 | Intel Corporation | Device and method to test on-chip memory in a production environment |
| JP3893238B2 (ja) * | 2000-07-14 | 2007-03-14 | 富士通株式会社 | 半導体記憶装置の不良解析装置 |
| US6347056B1 (en) * | 2001-05-16 | 2002-02-12 | Motorola, Inc. | Recording of result information in a built-in self-test circuit and method therefor |
-
2002
- 2002-04-05 US US10/116,128 patent/US20020194558A1/en not_active Abandoned
- 2002-04-09 WO PCT/US2002/008245 patent/WO2002084668A1/en not_active Ceased
- 2002-04-09 AT AT02726654T patent/ATE364227T1/de not_active IP Right Cessation
- 2002-04-09 DE DE60220511T patent/DE60220511T2/de not_active Expired - Lifetime
- 2002-04-09 EP EP02726654A patent/EP1377981B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002084668A1 (en) | 2002-10-24 |
| EP1377981A1 (de) | 2004-01-07 |
| DE60220511T2 (de) | 2008-02-14 |
| US20020194558A1 (en) | 2002-12-19 |
| EP1377981A4 (de) | 2006-03-22 |
| EP1377981B1 (de) | 2007-06-06 |
| DE60220511D1 (de) | 2007-07-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |