ATE364901T1 - Laterale pin diode aus polysilizium und verfahren zur herstellung - Google Patents
Laterale pin diode aus polysilizium und verfahren zur herstellungInfo
- Publication number
- ATE364901T1 ATE364901T1 AT01310302T AT01310302T ATE364901T1 AT E364901 T1 ATE364901 T1 AT E364901T1 AT 01310302 T AT01310302 T AT 01310302T AT 01310302 T AT01310302 T AT 01310302T AT E364901 T1 ATE364901 T1 AT E364901T1
- Authority
- AT
- Austria
- Prior art keywords
- pin diode
- polysilicon
- producing
- lateral pin
- diode made
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/734,624 US6426547B1 (en) | 2000-12-12 | 2000-12-12 | Lateral polysilicon pin diode and method for so fabricating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE364901T1 true ATE364901T1 (de) | 2007-07-15 |
Family
ID=24952439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01310302T ATE364901T1 (de) | 2000-12-12 | 2001-12-10 | Laterale pin diode aus polysilizium und verfahren zur herstellung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6426547B1 (de) |
| EP (1) | EP1215733B1 (de) |
| CN (1) | CN1205675C (de) |
| AT (1) | ATE364901T1 (de) |
| DE (1) | DE60128883T2 (de) |
| TW (1) | TWI243485B (de) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1137055A1 (de) * | 2000-03-24 | 2001-09-26 | Infineon Technologies AG | Verfahren zur Herstellung einer Hochfrequenz-Halbleiterstruktur und Hochfrequenz-Halbleiterstruktur |
| US6794641B2 (en) * | 2002-05-30 | 2004-09-21 | Micromass Uk Limited | Mass spectrometer |
| JP4241446B2 (ja) * | 2003-03-26 | 2009-03-18 | キヤノン株式会社 | 積層型光起電力素子 |
| DE10344609B3 (de) * | 2003-09-25 | 2005-07-21 | Infineon Technologies Ag | Hochfrequenzdiode |
| US6936895B2 (en) * | 2003-10-09 | 2005-08-30 | Chartered Semiconductor Manufacturing Ltd. | ESD protection device |
| US7026211B1 (en) * | 2004-03-08 | 2006-04-11 | Advanced Micro Devices, Inc. | Semiconductor component and method of manufacture |
| US7405465B2 (en) | 2004-09-29 | 2008-07-29 | Sandisk 3D Llc | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making |
| KR100759682B1 (ko) * | 2006-03-30 | 2007-09-17 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 |
| CN100552991C (zh) * | 2006-09-27 | 2009-10-21 | 中国科学院半导体研究所 | 声子调控间接带隙半导体材料横向电注入发光器件 |
| US7812370B2 (en) | 2007-07-25 | 2010-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling |
| DE102007058003B4 (de) * | 2007-12-03 | 2019-12-05 | Infineon Technologies Ag | Halbleiterbauelement, Sensorelement, Verwendung eines Halbleiterbauelements sowie Verfahren zur Abwehr von Lichtangriffen |
| US7833888B2 (en) * | 2008-05-06 | 2010-11-16 | Chartered Semiconductor Manufacturing Ltd. | Integrated circuit system employing grain size enlargement |
| US7834345B2 (en) | 2008-09-05 | 2010-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tunnel field-effect transistors with superlattice channels |
| US8587075B2 (en) | 2008-11-18 | 2013-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tunnel field-effect transistor with metal source |
| KR101239134B1 (ko) * | 2008-12-10 | 2013-03-07 | 한국전자통신연구원 | 흡수 광변조기 및 그것의 제조 방법 |
| US9060146B2 (en) * | 2009-01-06 | 2015-06-16 | Next Biometrics Group Asa | Low noise reading architecture for active sensor arrays |
| CN102376775B (zh) * | 2010-08-26 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | BiCMOS工艺中的寄生PIN器件及制造方法 |
| CN102403233B (zh) * | 2011-12-12 | 2014-06-11 | 复旦大学 | 垂直沟道的隧穿晶体管的制造方法 |
| CN103151393B (zh) * | 2013-02-28 | 2015-04-15 | 溧阳市宏达电机有限公司 | 一种pin二极管的封装结构 |
| CN103280397B (zh) * | 2013-05-30 | 2015-09-23 | 中国电子科技集团公司第十三研究所 | 一种横向石墨烯pin结的制备方法 |
| US9864138B2 (en) | 2015-01-05 | 2018-01-09 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
| CN106847901A (zh) * | 2016-12-20 | 2017-06-13 | 西安科锐盛创新科技有限公司 | 多层全息天线中AlAs‑Ge‑AlAs结构基等离子pin二极管的制造方法 |
| CN109599441B (zh) * | 2018-12-29 | 2022-03-18 | 上海华力微电子有限公司 | Soi二极管 |
| CN121038298A (zh) * | 2024-05-24 | 2025-11-28 | 京东方科技集团股份有限公司 | Pin二极管及其制备方法、电子设备 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2268355B1 (de) | 1974-04-16 | 1978-01-20 | Thomson Csf | |
| US4751193A (en) * | 1986-10-09 | 1988-06-14 | Q-Dot, Inc. | Method of making SOI recrystallized layers by short spatially uniform light pulses |
| US5268310A (en) | 1992-11-25 | 1993-12-07 | M/A-Com, Inc. | Method for making a mesa type PIN diode |
| JP3192546B2 (ja) * | 1994-04-15 | 2001-07-30 | シャープ株式会社 | 半導体装置およびその製造方法 |
| US5610790A (en) * | 1995-01-20 | 1997-03-11 | Xilinx, Inc. | Method and structure for providing ESD protection for silicon on insulator integrated circuits |
| US5731619A (en) | 1996-05-22 | 1998-03-24 | International Business Machines Corporation | CMOS structure with FETS having isolated wells with merged depletions and methods of making same |
| US5966605A (en) * | 1997-11-07 | 1999-10-12 | Advanced Micro Devices, Inc. | Reduction of poly depletion in semiconductor integrated circuits |
| US5886374A (en) | 1998-01-05 | 1999-03-23 | Motorola, Inc. | Optically sensitive device and method |
-
2000
- 2000-12-12 US US09/734,624 patent/US6426547B1/en not_active Expired - Fee Related
-
2001
- 2001-11-15 CN CNB011385359A patent/CN1205675C/zh not_active Expired - Fee Related
- 2001-12-07 TW TW090130374A patent/TWI243485B/zh not_active IP Right Cessation
- 2001-12-10 AT AT01310302T patent/ATE364901T1/de not_active IP Right Cessation
- 2001-12-10 EP EP01310302A patent/EP1215733B1/de not_active Expired - Lifetime
- 2001-12-10 DE DE60128883T patent/DE60128883T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TWI243485B (en) | 2005-11-11 |
| DE60128883T2 (de) | 2008-02-14 |
| DE60128883D1 (de) | 2007-07-26 |
| CN1357926A (zh) | 2002-07-10 |
| CN1205675C (zh) | 2005-06-08 |
| EP1215733B1 (de) | 2007-06-13 |
| US20020070388A1 (en) | 2002-06-13 |
| EP1215733A2 (de) | 2002-06-19 |
| EP1215733A3 (de) | 2004-05-19 |
| US6426547B1 (en) | 2002-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE364901T1 (de) | Laterale pin diode aus polysilizium und verfahren zur herstellung | |
| DE50102141D1 (de) | Funktionselementanordnung, funktionselement, hilfsfügeteil, zusammenbauteil und verfahren zur herstellung eines zusammenbauteils | |
| DE50100024D1 (de) | Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe | |
| ATE330137T1 (de) | Mutter und verfahren zu ihrer herstellung | |
| DE60217690D1 (de) | Vorrichtung zur herstellung einer objektivlinse und herstellungsverfahren | |
| DE60139614D1 (de) | Verfahren zur s.i.p/h.323-zusammenarbeit | |
| ATE359994T1 (de) | Verfahren zur herstellung von oxazolidinonen | |
| DE60236814D1 (de) | 3-alkyl-5,5',6,6',7,7',8,8'-octahydro-2,2'-binaphthole und 3,3'-dialkyl-5,5',6,6',7,7',8,8'-octahydro-2,2'-binaphthole, sowie verfahren zur ihrer herstellung | |
| DE60216406D1 (de) | Verfahren zur Herstellung eines Metallrohres und so erhältliches Metallrohr | |
| DE60138000D1 (de) | Methode zur Herstellung einer Halbleiterseitenfläche | |
| DE60103246D1 (de) | Integriertes verfahren zur herstellung einer alkenyl-substituierten aromatischen verbindung | |
| ATE158698T1 (de) | Schmuckkette, kettenglied und verfahren zur herstellung | |
| DE60237357D1 (de) | Verfahren zur herstellung eines emulgatorensalzfreien molkereiprodukts | |
| ATE522881T1 (de) | Verfahren zur herstellung eines artikels mit mindestens einem siliziumchip | |
| ATE232161T1 (de) | Kühlmittelrohr für brennkraftmaschinen sowie verfahren zur herstellung desselben | |
| ATE506351T1 (de) | Verfahren zur herstellung von 10,11-dihydro-10- oxo-5h-dibenzoäb,füazepin-5-carboxamid | |
| DE60222046D1 (de) | Verfahren zur Herstellung HBT-Anordnungen | |
| ATE278050T1 (de) | Verfahren zur herstellung einer verdampfungsquelle | |
| ATE297841T1 (de) | Verfahren zur herstellung einer matrix und nach diesem verfahren hergestellte matrix | |
| DE50203577D1 (de) | Laterale pin-diode und verfahren zur herstellung derselben | |
| ATE220707T1 (de) | Verfahren zur herstellung einer schnellbindenden wässrigen lackzusammensetzung aus zwei komponenten und so erhaltene lackzusammensetzung | |
| ATE296816T1 (de) | Verfahren zur herstellung von ethern, vorzugsweise von thf | |
| DE60137644D1 (de) | Verfahren zur herstellung sauerstoffhaltiger ungesättigter verbindungen | |
| DE60201763D1 (de) | Dehnbares Förderband und Verfahren zur seiner Herstellung | |
| DE60136429D1 (de) | Verfahren zur herstellung einer halbleiteranordnung mit einem feldeffekt-transistor mit vergrabenem kanal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |