ATE366984T1 - Phasenänderungs-speicherelement mit verbesserter zyklierbarkeit - Google Patents

Phasenänderungs-speicherelement mit verbesserter zyklierbarkeit

Info

Publication number
ATE366984T1
ATE366984T1 AT04805797T AT04805797T ATE366984T1 AT E366984 T1 ATE366984 T1 AT E366984T1 AT 04805797 T AT04805797 T AT 04805797T AT 04805797 T AT04805797 T AT 04805797T AT E366984 T1 ATE366984 T1 AT E366984T1
Authority
AT
Austria
Prior art keywords
phase change
storage element
outmost
change storage
central area
Prior art date
Application number
AT04805797T
Other languages
English (en)
Inventor
Veronique Sousa
Pierre Desre
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE366984T1 publication Critical patent/ATE366984T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Laminated Bodies (AREA)
  • Polyesters Or Polycarbonates (AREA)
AT04805797T 2003-11-04 2004-11-02 Phasenänderungs-speicherelement mit verbesserter zyklierbarkeit ATE366984T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0350784A FR2861887B1 (fr) 2003-11-04 2003-11-04 Element de memoire a changement de phase a cyclabilite amelioree

Publications (1)

Publication Number Publication Date
ATE366984T1 true ATE366984T1 (de) 2007-08-15

Family

ID=34430079

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04805797T ATE366984T1 (de) 2003-11-04 2004-11-02 Phasenänderungs-speicherelement mit verbesserter zyklierbarkeit

Country Status (6)

Country Link
US (1) US8232542B2 (de)
EP (1) EP1683157B1 (de)
AT (1) ATE366984T1 (de)
DE (1) DE602004007544T2 (de)
FR (1) FR2861887B1 (de)
WO (1) WO2005045847A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2880177B1 (fr) * 2004-12-23 2007-05-18 Commissariat Energie Atomique Memoire pmc ayant un temps de retention et une vitesse d'ecriture ameliores
EP1886318B1 (de) * 2005-05-19 2008-10-08 Koninklijke Philips Electronics N.V. Verfahren zum regeln des zuerst schmelzenden bereiches einer pcm-zelle und damit hergestellte vorrichtungen
US7635855B2 (en) * 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7394088B2 (en) 2005-11-15 2008-07-01 Macronix International Co., Ltd. Thermally contained/insulated phase change memory device and method (combined)
WO2007072308A1 (en) * 2005-12-20 2007-06-28 Koninklijke Philips Electronics N.V. A vertical phase change memory cell and methods for manufacturing thereof
US7531825B2 (en) * 2005-12-27 2009-05-12 Macronix International Co., Ltd. Method for forming self-aligned thermal isolation cell for a variable resistance memory array
US8067762B2 (en) 2006-11-16 2011-11-29 Macronix International Co., Ltd. Resistance random access memory structure for enhanced retention
US8017930B2 (en) * 2006-12-21 2011-09-13 Qimonda Ag Pillar phase change memory cell
FR2922368A1 (fr) * 2007-10-16 2009-04-17 Commissariat Energie Atomique Procede de fabrication d'une memoire cbram ayant une fiabilite amelioree
US8009468B2 (en) * 2008-07-03 2011-08-30 Qimonda Ag Method for fabricating an integrated circuit including memory element with spatially stable material
KR101430171B1 (ko) * 2008-07-18 2014-08-14 삼성전자주식회사 다중치 상변화 메모리 소자
US20130154123A1 (en) * 2011-12-20 2013-06-20 Infineon Technologies Ag Semiconductor Device and Fabrication Method
CN105070827B (zh) * 2015-07-15 2017-09-26 中国科学院半导体研究所 基于腐蚀的水平全限制相变存储器的自对准制备方法
CN105742490B (zh) * 2016-03-11 2018-09-07 中国科学院上海微系统与信息技术研究所 一种提高相变存储器数据保持力的相变材料层结构
TWI771597B (zh) * 2019-02-22 2022-07-21 日商東芝記憶體股份有限公司 半導體儲存裝置
US12150392B2 (en) * 2020-12-22 2024-11-19 International Business Machines Corporation Transfer length phase change material (PCM) based bridge cell

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4115872A (en) * 1977-05-31 1978-09-19 Burroughs Corporation Amorphous semiconductor memory device for employment in an electrically alterable read-only memory
US4177475A (en) * 1977-10-31 1979-12-04 Burroughs Corporation High temperature amorphous memory device for an electrically alterable read-only memory
US4314256A (en) * 1979-06-12 1982-02-02 Petrov Vyacheslav V Radiation-sensitive material and method for recording information on radiation-sensitive material
US4845533A (en) * 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
US5414271A (en) * 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability
US5177567A (en) * 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5363329A (en) * 1993-11-10 1994-11-08 Eugeniy Troyan Semiconductor memory device for use in an electrically alterable read-only memory
JP3550317B2 (ja) * 1999-05-31 2004-08-04 京セラ株式会社 光記録媒体
JP3624291B2 (ja) * 2002-04-09 2005-03-02 松下電器産業株式会社 不揮発性メモリおよびその製造方法
US6927410B2 (en) * 2003-09-04 2005-08-09 Silicon Storage Technology, Inc. Memory device with discrete layers of phase change memory material
US7057258B2 (en) * 2003-10-29 2006-06-06 Hewlett-Packard Development Company, L.P. Resistive memory device and method for making the same
US7718987B2 (en) * 2004-02-19 2010-05-18 Agency For Science, Technology And Research Electrically writable and erasable memory medium having a data element with two or more multiple-layer structures made of individual layers
US20080042119A1 (en) * 2005-08-09 2008-02-21 Ovonyx, Inc. Multi-layered chalcogenide and related devices having enhanced operational characteristics

Also Published As

Publication number Publication date
DE602004007544D1 (de) 2007-08-23
EP1683157A1 (de) 2006-07-26
EP1683157B1 (de) 2007-07-11
WO2005045847A1 (fr) 2005-05-19
DE602004007544T2 (de) 2008-03-20
FR2861887B1 (fr) 2006-01-13
FR2861887A1 (fr) 2005-05-06
US8232542B2 (en) 2012-07-31
US20070072125A1 (en) 2007-03-29

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