ATE36727T1 - Poroese traeger aus siliciumnitrid zur dotierung von halbleitern. - Google Patents

Poroese traeger aus siliciumnitrid zur dotierung von halbleitern.

Info

Publication number
ATE36727T1
ATE36727T1 AT84303899T AT84303899T ATE36727T1 AT E36727 T1 ATE36727 T1 AT E36727T1 AT 84303899 T AT84303899 T AT 84303899T AT 84303899 T AT84303899 T AT 84303899T AT E36727 T1 ATE36727 T1 AT E36727T1
Authority
AT
Austria
Prior art keywords
silicon nitride
dopant
porous carrier
carrier made
semiconductors
Prior art date
Application number
AT84303899T
Other languages
English (en)
Inventor
Gabriel Paul Demunda
Richard Ernest Tressler
Original Assignee
Stemcor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stemcor Corp filed Critical Stemcor Corp
Application granted granted Critical
Publication of ATE36727T1 publication Critical patent/ATE36727T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
AT84303899T 1983-06-08 1984-06-08 Poroese traeger aus siliciumnitrid zur dotierung von halbleitern. ATE36727T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/502,286 US4596716A (en) 1983-06-08 1983-06-08 Porous silicon nitride semiconductor dopant carriers
EP84303899A EP0156054B1 (de) 1983-06-08 1984-06-08 Poröse Träger aus Siliciumnitrid zur Dotierung von Halbleitern

Publications (1)

Publication Number Publication Date
ATE36727T1 true ATE36727T1 (de) 1988-09-15

Family

ID=23997147

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84303899T ATE36727T1 (de) 1983-06-08 1984-06-08 Poroese traeger aus siliciumnitrid zur dotierung von halbleitern.

Country Status (7)

Country Link
US (1) US4596716A (de)
EP (1) EP0156054B1 (de)
JP (1) JPS6024011A (de)
AT (1) ATE36727T1 (de)
CA (1) CA1245424A (de)
DE (1) DE3473616D1 (de)
IE (1) IE55724B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525429A (en) * 1983-06-08 1985-06-25 Kennecott Corporation Porous semiconductor dopant carriers
US4749615A (en) * 1986-10-31 1988-06-07 Stemcor Corporation Semiconductor dopant source
DE3901401C2 (de) * 1988-03-01 1996-12-19 Fraunhofer Ges Forschung Verfahren zur Steuerung einer Vakuum-Lichtbogenentladung
US5332697A (en) * 1989-05-31 1994-07-26 Smith Rosemary L Formation of silicon nitride by nitridation of porous silicon
JP4368230B2 (ja) * 2004-03-30 2009-11-18 電気化学工業株式会社 ホウ素化合物の固定方法及びホウ素拡散源

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1340696A (en) * 1970-07-10 1973-12-12 Lucas Industries Ltd Method of manufacturing silicon nitride products
US3849344A (en) * 1972-03-31 1974-11-19 Carborundum Co Solid diffusion sources containing phosphorus and silicon
IT989744B (it) * 1972-10-02 1975-06-10 Ford Motor Co Convertitore catalitico a base di nitruro di silicio per il tratta mento dei gas di scarico di motori a combustione interna e procedi mento per la sua produzione
JPS4995567A (de) * 1973-01-12 1974-09-10
US3923563A (en) * 1973-04-16 1975-12-02 Owens Illinois Inc Process for doping silicon semiconductors using an impregnated refractory dopant source
DE2603273A1 (de) * 1976-01-29 1977-08-04 Itt Ind Gmbh Deutsche Diffusionsverfahren
IE56118B1 (en) * 1983-06-08 1991-04-24 Kennecott Corp Foam semiconductor dopant carriers
US4525429A (en) * 1983-06-08 1985-06-25 Kennecott Corporation Porous semiconductor dopant carriers

Also Published As

Publication number Publication date
IE55724B1 (en) 1991-01-02
EP0156054B1 (de) 1988-08-24
US4596716A (en) 1986-06-24
IE841413L (en) 1984-12-08
EP0156054A1 (de) 1985-10-02
CA1245424A (en) 1988-11-29
JPS6024011A (ja) 1985-02-06
DE3473616D1 (de) 1988-09-29

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee