ATE368756T1 - Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck - Google Patents

Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck

Info

Publication number
ATE368756T1
ATE368756T1 AT99949661T AT99949661T ATE368756T1 AT E368756 T1 ATE368756 T1 AT E368756T1 AT 99949661 T AT99949661 T AT 99949661T AT 99949661 T AT99949661 T AT 99949661T AT E368756 T1 ATE368756 T1 AT E368756T1
Authority
AT
Austria
Prior art keywords
rate
gas
substrate
deposition
combination
Prior art date
Application number
AT99949661T
Other languages
English (en)
Inventor
Robert Cook
Daniel Brors
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE368756T1 publication Critical patent/ATE368756T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
AT99949661T 1998-09-16 1999-09-15 Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck ATE368756T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10059498P 1998-09-16 1998-09-16

Publications (1)

Publication Number Publication Date
ATE368756T1 true ATE368756T1 (de) 2007-08-15

Family

ID=22280545

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99949661T ATE368756T1 (de) 1998-09-16 1999-09-15 Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck

Country Status (5)

Country Link
EP (1) EP1123423B1 (de)
JP (1) JP2002525841A (de)
AT (1) ATE368756T1 (de)
DE (1) DE69936727D1 (de)
WO (1) WO2000015868A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4267624B2 (ja) 2003-08-07 2009-05-27 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
ATE444380T1 (de) 2004-06-28 2009-10-15 Cambridge Nanotech Inc Atomlagenabscheidungssystem und -verfahren
KR100573482B1 (ko) * 2004-06-29 2006-04-24 에스티마이크로일렉트로닉스 엔.브이. 반도체 소자의 폴리 실리콘막 형성방법
DE102004039443B4 (de) * 2004-08-13 2023-05-25 Beijing E-Town Semiconductor Technology, Co., Ltd. Verfahren zum thermischen Behandeln von scheibenförmigen Substraten
CN103901479B (zh) * 2014-03-18 2016-06-22 电子科技大学 三维声波近探头104通道的微弱信号同步采集与处理系统
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR102955829B1 (ko) 2018-11-14 2026-04-23 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
CN120762258A (zh) 2018-12-20 2025-10-10 朗姆研究公司 抗蚀剂的干式显影
US12125711B2 (en) 2019-03-18 2024-10-22 Lam Research Corporation Reducing roughness of extreme ultraviolet lithography resists
WO2020223011A1 (en) 2019-04-30 2020-11-05 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
US12601974B2 (en) 2019-06-28 2026-04-14 Lam Research Corporation Bake strategies to enhance lithographic performance of metal-containing resist
TWI849159B (zh) 2019-06-28 2024-07-21 美商蘭姆研究公司 光阻膜的乾式腔室清潔
CN111048416A (zh) * 2019-12-25 2020-04-21 上海华力微电子有限公司 多晶硅薄膜的沉积方法
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
JP2023530299A (ja) 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
KR102673863B1 (ko) * 2020-11-13 2024-06-11 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
KR20250142946A (ko) 2020-12-08 2025-09-30 램 리써치 코포레이션 유기 증기를 사용한 포토레지스트 현상
US12504692B2 (en) 2022-07-01 2025-12-23 Lam Research Corporation Cyclic development of metal oxide based photoresist for etch stop deterrence
EP4681251A1 (de) 2023-03-17 2026-01-21 LAM Research Corporation Integration von trockenentwicklung und ätzverfahren zur euv-strukturierung in einer einzigen prozesskammer
KR20250034920A (ko) 2023-07-27 2025-03-11 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401687A (en) * 1981-11-12 1983-08-30 Advanced Semiconductor Materials America Plasma deposition of silicon
JPS6294922A (ja) * 1985-10-22 1987-05-01 Fuji Photo Film Co Ltd プラズマｃｖｄ法による製膜装置
JPS62230979A (ja) * 1986-03-31 1987-10-09 Canon Inc 堆積膜形成法
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
JPS63223178A (ja) * 1987-03-11 1988-09-16 Konica Corp アモルフアスシリコン系膜の製造方法
JPH0547673A (ja) * 1991-08-13 1993-02-26 Toshiba Corp 薄膜形成方法
JP3100702B2 (ja) * 1991-10-28 2000-10-23 株式会社東芝 減圧化学反応方法及びその装置
JPH08236458A (ja) * 1995-02-24 1996-09-13 Sumitomo Sitix Corp 半導体基板の製造方法
US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition

Also Published As

Publication number Publication date
WO2000015868A1 (en) 2000-03-23
EP1123423B1 (de) 2007-08-01
EP1123423A4 (de) 2005-05-11
DE69936727D1 (de) 2007-09-13
EP1123423A1 (de) 2001-08-16
JP2002525841A (ja) 2002-08-13

Similar Documents

Publication Publication Date Title
DE69936727D1 (de) Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck
US5624498A (en) Showerhead for a gas supplying apparatus
US7647886B2 (en) Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US6066204A (en) High pressure MOCVD reactor system
US5876797A (en) Low temperature high pressure silicon deposition method
US4800105A (en) Method of forming a thin film by chemical vapor deposition
JP3265042B2 (ja) 成膜方法
US5874129A (en) Low temperature, high pressure silicon deposition method
TW496907B (en) Method and apparatus of growing a thin film onto a substrate
US5431738A (en) Apparatus for growing group II-VI mixed compound semiconductor
KR20000060438A (ko) 산화알루미늄 막의 형성 방법
TW325601B (en) Process of manufacturing thin film semiconductor
US6287635B1 (en) High rate silicon deposition method at low pressures
WO2007008705A3 (en) Uniform batch film deposition process and films so produced
US5390626A (en) Process for formation of silicon carbide film
EP0238315B1 (de) Abscheidungsverfahren
WO1997008356A3 (en) Modified metalorganic chemical vapor deposition of group III-V thin layers
JP3251990B2 (ja) Ａｌ若しくはＡｌ合金の成膜方法
KR100589284B1 (ko) Ａｌｄ 박막증착방법
US7084074B1 (en) CVD gas injector and method therefor
JPS58132932A (ja) プラズマ処理装置
JPS59194424A (ja) 気相成長装置
KR0124563B1 (ko) 3-존 저압화학 증착 반응로에서의 비정질 실리콘 증착방법
JPS55118628A (en) Manufacturing method of epitaxial wafer
JP3707079B2 (ja) 化合物半導体薄膜成長方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties