ATE369622T1 - Reparatur von mikrostruckturen durch gasunterstütztes ätzen mit fokussierten ionenstrahlen - Google Patents

Reparatur von mikrostruckturen durch gasunterstütztes ätzen mit fokussierten ionenstrahlen

Info

Publication number
ATE369622T1
ATE369622T1 AT98915613T AT98915613T ATE369622T1 AT E369622 T1 ATE369622 T1 AT E369622T1 AT 98915613 T AT98915613 T AT 98915613T AT 98915613 T AT98915613 T AT 98915613T AT E369622 T1 ATE369622 T1 AT E369622T1
Authority
AT
Austria
Prior art keywords
workpiece
etching
patterned
excess portion
gas
Prior art date
Application number
AT98915613T
Other languages
English (en)
Inventor
J Casey
Andrew Doyle
Original Assignee
Fei Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fei Co filed Critical Fei Co
Application granted granted Critical
Publication of ATE369622T1 publication Critical patent/ATE369622T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/067—Manufacture or treatment of conductive parts of the interconnections by modifying the pattern of conductive parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT98915613T 1997-04-16 1998-04-15 Reparatur von mikrostruckturen durch gasunterstütztes ätzen mit fokussierten ionenstrahlen ATE369622T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/834,356 US6042738A (en) 1997-04-16 1997-04-16 Pattern film repair using a focused particle beam system

Publications (1)

Publication Number Publication Date
ATE369622T1 true ATE369622T1 (de) 2007-08-15

Family

ID=25266740

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98915613T ATE369622T1 (de) 1997-04-16 1998-04-15 Reparatur von mikrostruckturen durch gasunterstütztes ätzen mit fokussierten ionenstrahlen

Country Status (10)

Country Link
US (1) US6042738A (de)
EP (2) EP0976152B1 (de)
JP (1) JP2001521678A (de)
KR (1) KR100493878B1 (de)
CN (1) CN1199246C (de)
AT (1) ATE369622T1 (de)
AU (1) AU6975098A (de)
CA (1) CA2286638A1 (de)
DE (1) DE69838211T2 (de)
WO (1) WO1998047172A1 (de)

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Also Published As

Publication number Publication date
CN1199246C (zh) 2005-04-27
KR20010006492A (ko) 2001-01-26
EP1641034A3 (de) 2010-12-01
EP1641034B1 (de) 2012-02-29
EP1641034A2 (de) 2006-03-29
WO1998047172A1 (en) 1998-10-22
DE69838211T2 (de) 2008-06-19
DE69838211D1 (de) 2007-09-20
CN1261458A (zh) 2000-07-26
KR100493878B1 (ko) 2005-06-10
CA2286638A1 (en) 1998-10-22
US6042738A (en) 2000-03-28
EP0976152B1 (de) 2007-08-08
JP2001521678A (ja) 2001-11-06
AU6975098A (en) 1998-11-11
EP0976152A1 (de) 2000-02-02

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