ATE373317T1 - Cmp methode von einem substrat mit einer polierscheibe mit flixiertem schleifmittel - Google Patents

Cmp methode von einem substrat mit einer polierscheibe mit flixiertem schleifmittel

Info

Publication number
ATE373317T1
ATE373317T1 AT97946280T AT97946280T ATE373317T1 AT E373317 T1 ATE373317 T1 AT E373317T1 AT 97946280 T AT97946280 T AT 97946280T AT 97946280 T AT97946280 T AT 97946280T AT E373317 T1 ATE373317 T1 AT E373317T1
Authority
AT
Austria
Prior art keywords
abrasive
substrate
fixed
surface layer
solution
Prior art date
Application number
AT97946280T
Other languages
English (en)
Inventor
Guy Hudson
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE373317T1 publication Critical patent/ATE373317T1/de

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245Pads with fixed abrasives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12Preparing bulk and homogeneous wafers
    • H10P90/129Preparing bulk and homogeneous wafers by polishing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
AT97946280T 1996-10-18 1997-10-17 Cmp methode von einem substrat mit einer polierscheibe mit flixiertem schleifmittel ATE373317T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/732,691 US5972792A (en) 1996-10-18 1996-10-18 Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad

Publications (1)

Publication Number Publication Date
ATE373317T1 true ATE373317T1 (de) 2007-09-15

Family

ID=24944607

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97946280T ATE373317T1 (de) 1996-10-18 1997-10-17 Cmp methode von einem substrat mit einer polierscheibe mit flixiertem schleifmittel

Country Status (8)

Country Link
US (1) US5972792A (de)
EP (1) EP0946979B1 (de)
JP (2) JP3984296B2 (de)
KR (1) KR100489458B1 (de)
AT (1) ATE373317T1 (de)
AU (1) AU5148198A (de)
DE (1) DE69738133T2 (de)
WO (1) WO1998018159A1 (de)

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DE69738133T2 (de) 2008-06-12
EP0946979A1 (de) 1999-10-06
JP3984296B2 (ja) 2007-10-03
US5972792A (en) 1999-10-26
KR100489458B1 (ko) 2005-05-16
JP2001502610A (ja) 2001-02-27
DE69738133D1 (de) 2007-10-25
JP2006148174A (ja) 2006-06-08
EP0946979B1 (de) 2007-09-12
KR20000052645A (ko) 2000-08-25
AU5148198A (en) 1998-05-15
WO1998018159A1 (en) 1998-04-30

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