ATE378289T1 - Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial - Google Patents

Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial

Info

Publication number
ATE378289T1
ATE378289T1 AT05746642T AT05746642T ATE378289T1 AT E378289 T1 ATE378289 T1 AT E378289T1 AT 05746642 T AT05746642 T AT 05746642T AT 05746642 T AT05746642 T AT 05746642T AT E378289 T1 ATE378289 T1 AT E378289T1
Authority
AT
Austria
Prior art keywords
semiconductor material
chamber
crystallisation
crucible
molten semiconductor
Prior art date
Application number
AT05746642T
Other languages
English (en)
Inventor
Pascal Rivat
Gobbo Jean-Pierre Del
Original Assignee
Efd Induction Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Efd Induction Sa filed Critical Efd Induction Sa
Application granted granted Critical
Publication of ATE378289T1 publication Critical patent/ATE378289T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT05746642T 2004-04-20 2005-04-19 Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial ATE378289T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0450738A FR2869028B1 (fr) 2004-04-20 2004-04-20 Procede et installation de fabrication de blocs d'un materiau semiconducteur

Publications (1)

Publication Number Publication Date
ATE378289T1 true ATE378289T1 (de) 2007-11-15

Family

ID=34945044

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05746642T ATE378289T1 (de) 2004-04-20 2005-04-19 Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial

Country Status (6)

Country Link
EP (1) EP1742870B1 (de)
AT (1) ATE378289T1 (de)
DE (1) DE602005003346T2 (de)
ES (1) ES2296181T3 (de)
FR (1) FR2869028B1 (de)
WO (1) WO2005105670A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7691199B2 (en) 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
JP5080971B2 (ja) * 2004-06-18 2012-11-21 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 結晶製造装置に溶融ソース材料を装入する方法および溶融装置アッセンブリ
US7465351B2 (en) 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
FR2909990B1 (fr) * 2006-12-13 2009-03-13 Efd Induction Sa Sa Procede et installation de fabrication de blocs d'un materiau semiconducteur
JP4307516B1 (ja) * 2008-11-25 2009-08-05 佑吉 堀岡 結晶成長装置及び結晶成長方法
FR2940327B1 (fr) 2008-12-19 2011-02-11 Commissariat Energie Atomique Four de fusion-solidification comportant une modulation des echanges thermiques par les parois laterales
EP2530187A1 (de) * 2011-06-03 2012-12-05 Evonik Solar Norge AS Siliciumverfeinerung durch die direktionale Erstarrung in einer sauerstoffhaltigen Atmosphäre

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2827592B1 (fr) * 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
FR2831881B1 (fr) * 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire

Also Published As

Publication number Publication date
EP1742870A1 (de) 2007-01-17
ES2296181T3 (es) 2008-04-16
WO2005105670A1 (fr) 2005-11-10
FR2869028A1 (fr) 2005-10-21
EP1742870B1 (de) 2007-11-14
FR2869028B1 (fr) 2006-07-07
DE602005003346T2 (de) 2008-09-04
DE602005003346D1 (de) 2007-12-27

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Legal Events

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