ATE378692T1 - Halbleiterbauelement mit zweifachem gate und dessen herstellungsverfahren - Google Patents

Halbleiterbauelement mit zweifachem gate und dessen herstellungsverfahren

Info

Publication number
ATE378692T1
ATE378692T1 AT01911561T AT01911561T ATE378692T1 AT E378692 T1 ATE378692 T1 AT E378692T1 AT 01911561 T AT01911561 T AT 01911561T AT 01911561 T AT01911561 T AT 01911561T AT E378692 T1 ATE378692 T1 AT E378692T1
Authority
AT
Austria
Prior art keywords
gate
silicon oxide
semiconductor body
production method
oxide layer
Prior art date
Application number
AT01911561T
Other languages
English (en)
Inventor
Youri Ponomarev
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE378692T1 publication Critical patent/ATE378692T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
AT01911561T 2000-02-29 2001-01-31 Halbleiterbauelement mit zweifachem gate und dessen herstellungsverfahren ATE378692T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00200717 2000-02-29

Publications (1)

Publication Number Publication Date
ATE378692T1 true ATE378692T1 (de) 2007-11-15

Family

ID=8171125

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01911561T ATE378692T1 (de) 2000-02-29 2001-01-31 Halbleiterbauelement mit zweifachem gate und dessen herstellungsverfahren

Country Status (10)

Country Link
US (1) US6621124B2 (de)
EP (1) EP1179218B1 (de)
JP (1) JP2003526210A (de)
KR (1) KR100694331B1 (de)
CN (1) CN1208841C (de)
AT (1) ATE378692T1 (de)
DE (1) DE60131334T2 (de)
MY (1) MY124533A (de)
TW (1) TW478116B (de)
WO (1) WO2001065609A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007504660A (ja) * 2003-09-03 2007-03-01 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ダブルゲート電界効果トランジスタ装置を製造する方法、及びそのようなダブルゲート電界効果トランジスタ装置
TWI248681B (en) * 2004-03-29 2006-02-01 Imec Inter Uni Micro Electr Method for fabricating self-aligned source and drain contacts in a double gate FET with controlled manufacturing of a thin Si or non-Si channel
CN100397597C (zh) * 2004-06-11 2008-06-25 旺宏电子股份有限公司 金属氧化物半导体晶体管的制造方法以及存储器元件的制造方法
ATE389948T1 (de) * 2004-09-02 2008-04-15 Nxp Bv Verfahren zur herstellung einer halbleitervorrichtung
WO2006070310A1 (en) * 2004-12-28 2006-07-06 Koninklijke Philips Electronics N.V. Method for the manufacture of a semiconductor device and a semiconductor device obtained through it
US7709313B2 (en) * 2005-07-19 2010-05-04 International Business Machines Corporation High performance capacitors in planar back gates CMOS
US8017933B2 (en) * 2008-06-30 2011-09-13 Intel Corporation Compositionally-graded quantum-well channels for semiconductor devices
EP2190022B1 (de) * 2008-11-20 2013-01-02 Hitachi Ltd. Spinpolarisierte Ladungsträgervorrichtung
US9466729B1 (en) * 2015-05-08 2016-10-11 Qualcomm Incorporated Etch stop region based fabrication of bonded semiconductor structures
WO2020217735A1 (ja) 2019-04-25 2020-10-29 ローム株式会社 窒化物半導体装置
JP7395273B2 (ja) * 2019-07-02 2023-12-11 ローム株式会社 窒化物半導体装置およびその製造方法
US11424262B2 (en) * 2020-03-17 2022-08-23 Micron Technology, Inc. Microelectronic devices including staircase structures, and related memory devices and electronic systems

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04307972A (ja) * 1991-04-05 1992-10-30 Fujitsu Ltd 半導体装置の製造方法
JP2603886B2 (ja) * 1991-05-09 1997-04-23 日本電信電話株式会社 薄層ｓｏｉ型絶縁ゲート型電界効果トランジスタの製造方法
US5302842A (en) * 1992-07-20 1994-04-12 Bell Communications Research, Inc. Field-effect transistor formed over gate electrode
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
JPH07211916A (ja) * 1994-01-19 1995-08-11 Sony Corp トランジスタ素子及びその作製方法
US5705405A (en) * 1994-09-30 1998-01-06 Sgs-Thomson Microelectronics, Inc. Method of making the film transistor with all-around gate electrode
US5736435A (en) * 1995-07-03 1998-04-07 Motorola, Inc. Process for fabricating a fully self-aligned soi mosfet
JP3409542B2 (ja) * 1995-11-21 2003-05-26 ソニー株式会社 半導体装置の製造方法
JP4332925B2 (ja) * 1999-02-25 2009-09-16 ソニー株式会社 半導体装置およびその製造方法
JP3086906B1 (ja) * 1999-05-28 2000-09-11 工業技術院長 電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
KR100694331B1 (ko) 2007-03-12
TW478116B (en) 2002-03-01
JP2003526210A (ja) 2003-09-02
US6621124B2 (en) 2003-09-16
KR20010112468A (ko) 2001-12-20
US20010017388A1 (en) 2001-08-30
WO2001065609A1 (en) 2001-09-07
EP1179218B1 (de) 2007-11-14
DE60131334D1 (de) 2007-12-27
MY124533A (en) 2006-06-30
EP1179218A1 (de) 2002-02-13
CN1208841C (zh) 2005-06-29
DE60131334T2 (de) 2008-09-11
CN1366713A (zh) 2002-08-28

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