ATE381628T1 - Verfahren zur abscheidung von atomschichten aus metallen - Google Patents

Verfahren zur abscheidung von atomschichten aus metallen

Info

Publication number
ATE381628T1
ATE381628T1 AT03025374T AT03025374T ATE381628T1 AT E381628 T1 ATE381628 T1 AT E381628T1 AT 03025374 T AT03025374 T AT 03025374T AT 03025374 T AT03025374 T AT 03025374T AT E381628 T1 ATE381628 T1 AT E381628T1
Authority
AT
Austria
Prior art keywords
metal
film
metals
metal halide
atomic layers
Prior art date
Application number
AT03025374T
Other languages
English (en)
Inventor
John Anthony Thomas Norman
David Allen Roberts
Melanie Anne Boze
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Application granted granted Critical
Publication of ATE381628T1 publication Critical patent/ATE381628T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/60—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0523—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by irradiating with ultraviolet or particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
AT03025374T 2002-11-05 2003-11-04 Verfahren zur abscheidung von atomschichten aus metallen ATE381628T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28790302A 2002-11-05 2002-11-05
US10/324,781 US6869876B2 (en) 2002-11-05 2002-12-20 Process for atomic layer deposition of metal films

Publications (1)

Publication Number Publication Date
ATE381628T1 true ATE381628T1 (de) 2008-01-15

Family

ID=32314358

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03025374T ATE381628T1 (de) 2002-11-05 2003-11-04 Verfahren zur abscheidung von atomschichten aus metallen

Country Status (7)

Country Link
US (1) US6869876B2 (de)
EP (1) EP1426463B1 (de)
JP (1) JP4113099B2 (de)
KR (1) KR100639640B1 (de)
AT (1) ATE381628T1 (de)
DE (1) DE60318173T2 (de)
TW (1) TWI240970B (de)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US7494927B2 (en) * 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6989172B2 (en) * 2003-01-27 2006-01-24 Micell Technologies, Inc. Method of coating microelectronic substrates
US7205960B2 (en) 2003-02-19 2007-04-17 Mirage Innovations Ltd. Chromatic planar optic display system
US7534967B2 (en) * 2003-02-25 2009-05-19 University Of North Texas Conductor structures including penetrable materials
US6951813B2 (en) * 2003-04-04 2005-10-04 Micron Technology, Inc. Methods of forming metal-containing layers including a metal bonded to halogens and trialkylaluminum
US7311946B2 (en) * 2003-05-02 2007-12-25 Air Products And Chemicals, Inc. Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes
US7067407B2 (en) * 2003-08-04 2006-06-27 Asm International, N.V. Method of growing electrical conductors
US7048968B2 (en) * 2003-08-22 2006-05-23 Micron Technology, Inc. Methods of depositing materials over substrates, and methods of forming layers over substrates
KR100528069B1 (ko) * 2003-09-02 2005-11-15 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
US7312163B2 (en) * 2003-09-24 2007-12-25 Micron Technology, Inc. Atomic layer deposition methods, and methods of forming materials over semiconductor substrates
US20050085031A1 (en) * 2003-10-15 2005-04-21 Applied Materials, Inc. Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers
US7419702B2 (en) * 2004-03-31 2008-09-02 Tokyo Electron Limited Method for processing a substrate
WO2005122195A2 (en) * 2004-06-04 2005-12-22 International Business Machines Corporation Fabrication of interconnect structures
KR100602087B1 (ko) * 2004-07-09 2006-07-14 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
US7294851B2 (en) * 2004-11-03 2007-11-13 Infineon Technologies Ag Dense seed layer and method of formation
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes
US7034169B1 (en) 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
US8025922B2 (en) * 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US7573640B2 (en) * 2005-04-04 2009-08-11 Mirage Innovations Ltd. Multi-plane optical apparatus
US8435905B2 (en) * 2005-06-13 2013-05-07 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device, and substrate processing apparatus
US20070014919A1 (en) * 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
US7314828B2 (en) * 2005-07-19 2008-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Repairing method for low-k dielectric materials
US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
EP1942364A1 (de) 2005-09-14 2008-07-09 Mirage Innovations Ltd. Diffraktives optisches Relais und Herstellungsverfahren dafür
US20080043334A1 (en) * 2006-08-18 2008-02-21 Mirage Innovations Ltd. Diffractive optical relay and method for manufacturing the same
WO2007031991A2 (en) * 2005-09-14 2007-03-22 Mirage Innovations Ltd. Diffractive optical device and system
US20090128902A1 (en) * 2005-11-03 2009-05-21 Yehuda Niv Binocular Optical Relay Device
JP4975414B2 (ja) * 2005-11-16 2012-07-11 エーエスエム インターナショナル エヌ．ヴェー． Ｃｖｄ又はａｌｄによる膜の堆積のための方法
WO2008023375A1 (en) * 2006-08-23 2008-02-28 Mirage Innovations Ltd. Diffractive optical relay device with improved color uniformity
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
KR100807216B1 (ko) * 2006-09-29 2008-02-28 삼성전자주식회사 두께 균일성을 향상할 수 있는 박막 형성 장치 및 방법
US7692222B2 (en) * 2006-11-07 2010-04-06 Raytheon Company Atomic layer deposition in the formation of gate structures for III-V semiconductor
US20080124484A1 (en) * 2006-11-08 2008-05-29 Asm Japan K.K. Method of forming ru film and metal wiring structure
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
US7638170B2 (en) * 2007-06-21 2009-12-29 Asm International N.V. Low resistivity metal carbonitride thin film deposition by atomic layer deposition
US20100302644A1 (en) * 2007-09-18 2010-12-02 Mirage Innovations Ltd Slanted optical device
US8017183B2 (en) * 2007-09-26 2011-09-13 Eastman Kodak Company Organosiloxane materials for selective area deposition of inorganic materials
US20090087339A1 (en) * 2007-09-28 2009-04-02 Asm Japan K.K. METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition
US20090130466A1 (en) * 2007-11-16 2009-05-21 Air Products And Chemicals, Inc. Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor
US9157150B2 (en) * 2007-12-04 2015-10-13 Cypress Semiconductor Corporation Method of operating a processing chamber used in forming electronic devices
DE102007058571B4 (de) 2007-12-05 2012-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens
US7655564B2 (en) * 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
US8993051B2 (en) 2007-12-12 2015-03-31 Technische Universiteit Delft Method for covering particles, especially a battery electrode material particles, and particles obtained with such method and a battery comprising such particle
KR20090067505A (ko) * 2007-12-21 2009-06-25 에이에스엠지니텍코리아 주식회사 루테늄막 증착 방법
US7799674B2 (en) * 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8084104B2 (en) * 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
JP5384291B2 (ja) * 2008-11-26 2014-01-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US8557702B2 (en) * 2009-02-02 2013-10-15 Asm America, Inc. Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
JP2012525718A (ja) * 2009-04-29 2012-10-22 アプライド マテリアルズ インコーポレイテッド ＨＶＰＥにおいてその場プレ−ＧａＮ堆積層を形成する方法
US20110020546A1 (en) * 2009-05-15 2011-01-27 Asm International N.V. Low Temperature ALD of Noble Metals
US8329569B2 (en) * 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
KR102042940B1 (ko) * 2010-07-06 2019-11-27 아토테크 도이칠란드 게엠베하 인쇄회로기판
US20120070981A1 (en) * 2010-09-17 2012-03-22 Clendenning Scott B Atomic layer deposition of a copper-containing seed layer
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US9005705B2 (en) * 2011-09-14 2015-04-14 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method
CN110592554A (zh) * 2013-06-26 2019-12-20 应用材料公司 沉积金属合金膜的方法
KR102314653B1 (ko) * 2013-06-28 2021-10-21 웨인 스테이트 유니버시티 기판 상에 층을 형성하기 위한 환원제로서 비스(트리메틸실릴) 6-원 고리계 및 관련된 화합물
JP6147693B2 (ja) * 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
US9607842B1 (en) * 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
TWI839906B (zh) * 2017-08-30 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 層形成方法
KR102103346B1 (ko) * 2017-11-15 2020-04-22 에스케이트리켐 주식회사 박막 증착용 전구체 용액 및 이를 이용한 박막 형성 방법.
IL279915B2 (en) * 2018-07-12 2025-08-01 Basf Se Process for the generation of metal- or semimetal-containing films
CN109273402B (zh) * 2018-09-13 2020-08-25 德淮半导体有限公司 金属阻挡层的制作方法、金属互连结构及其制作方法
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
JP2020132904A (ja) * 2019-02-13 2020-08-31 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2021046058A1 (en) 2019-09-03 2021-03-11 Lam Research Corporation Molybdenum deposition
CN114667600A (zh) 2019-10-15 2022-06-24 朗姆研究公司 钼填充
KR102953798B1 (ko) 2020-06-24 2026-04-15 에이에스엠 아이피 홀딩 비.브이. 몰리브덴을 포함하는 막의 기상 증착
CN112652677B (zh) * 2020-12-09 2023-10-27 晋能光伏技术有限责任公司 一种perc电池背面钝化工艺
JP7112768B2 (ja) * 2020-12-23 2022-08-04 株式会社クリエイティブコーティングス 金属膜のａｌｄ装置
US12031209B2 (en) 2021-02-16 2024-07-09 Applied Materials, Inc. Reducing agents for atomic layer deposition
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
US12588475B2 (en) 2021-05-14 2026-03-24 Lam Research Corporation High selectivity doped hardmask films
US20230002888A1 (en) * 2021-07-01 2023-01-05 Applied Materials, Inc. Method of depositing metal films
US12234548B2 (en) * 2022-02-03 2025-02-25 Asm Ip Holding B.V. Methods of forming copper iodide layer and structures including copper iodide layer
US20230317634A1 (en) * 2022-04-05 2023-10-05 Applied Materials, Inc. Coatings with diffusion barriers for corrosion and contamination protection
US20230386759A1 (en) * 2022-05-31 2023-11-30 President And Fellows Of Harvard College Methods of vapor deposition of metal halides
KR20260039744A (ko) * 2023-07-14 2026-03-20 램 리써치 코포레이션 할로겐-함유 활성제 분자를 이용한 금속-함유 막의 증착

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306666A (en) 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
US6475276B1 (en) * 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
KR100803770B1 (ko) 2000-03-07 2008-02-15 에이에스엠 인터내셔널 엔.브이. 구배（ｇｒａｄｅｄ）박막
US6921712B2 (en) 2000-05-15 2005-07-26 Asm International Nv Process for producing integrated circuits including reduction using gaseous organic compounds
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6368954B1 (en) 2000-07-28 2002-04-09 Advanced Micro Devices, Inc. Method of copper interconnect formation using atomic layer copper deposition
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US20020117399A1 (en) 2001-02-23 2002-08-29 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via

Also Published As

Publication number Publication date
US20040087143A1 (en) 2004-05-06
KR20040040376A (ko) 2004-05-12
KR100639640B1 (ko) 2006-10-30
EP1426463A1 (de) 2004-06-09
US6869876B2 (en) 2005-03-22
JP4113099B2 (ja) 2008-07-02
DE60318173T2 (de) 2008-04-10
TWI240970B (en) 2005-10-01
TW200408007A (en) 2004-05-16
EP1426463B1 (de) 2007-12-19
DE60318173D1 (de) 2008-01-31
JP2004156141A (ja) 2004-06-03

Similar Documents

Publication Publication Date Title
ATE381628T1 (de) Verfahren zur abscheidung von atomschichten aus metallen
TW200503076A (en) III-V compound semiconductor crystal and method for production thereof
DE60234001D1 (de) Verfahren zur Dampfabscheidung eines Kupferfilms.
DE60129380D1 (de) Vorrichtung und Verfahren zum Auftragen einer Dünnschicht auf einen Wafer durch Abscheidung von atomaren Schichten
TW200606168A (en) Copper (I) compounds useful as deposition precursors of copper thin films
DE69906033D1 (de) Verfahren zur herstellung eines nitridfilms aus drei komponenten der metall und silizium enthält
EP1246233A3 (de) Halbleitersubstrat aus der III-Nitrid-Gruppe und dessen Herstellungsverfahren
EP1122775A3 (de) Behandlung eines Metallnitrid/Metall - Stapels
WO2004020689A8 (en) Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
ATE489726T1 (de) Verfahren zur ausbildung dielektrischer filme
TWI318222B (en) Organometallic compounds and method of depositing a metal film using the same
TW200520099A (en) Method of forming a metal layer using an intermittent precursor gas flow process
ATE474441T1 (de) Verfahren zur herstellung einer elektrisch leitfähigen struktur
EP1916707A3 (de) Verfahren zur Abscheidung von Metallfilmen mittels CVD- oder ALD-Prozessen auf Diffusionsbarriereschichten
TW200609667A (en) Photomask blank, photomask and method for manufacturing same
ATE378441T1 (de) Verfahren zur synthese einer verbindung der formel m sb n+1 /sb ax sb n /sb, film aus der verbindung und verwendung davon
DE60314640D1 (de) Methoden zur abscheidung von atomschichten
EP1803838A3 (de) Verfahren zur selektiven Ablösung einer metallischen Beschichtung
TW200737300A (en) Reflexible photo-mask blank, manufacturing method thereof, reflexible photomask, and manufacturing method of semiconductor apparatus
WO2003049176A3 (en) Method for defining a source and a drain and a gap inbetween
ATE466119T1 (de) Metallisierung von substrat(en) durch ein flüssigkeit/ - dampfabscheidungsverfahren
ATE505816T1 (de) Verfahren zur herstellung eines indium-gallium- aluminium-nitrid-dünnfilms auf einem siliziumsubstrat
GB2372635B (en) Method of fabricating group-III nitride semiconductor crystals.
WO2006091290A3 (en) Method of forming nanoclusters
ATE334938T1 (de) Verfahren zur herstellung von organohalogensilanen aus amorphem silizium

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties