ATE384024T1 - Mikrostruktur und verfahren zu deren herstellung - Google Patents

Mikrostruktur und verfahren zu deren herstellung

Info

Publication number
ATE384024T1
ATE384024T1 AT01951392T AT01951392T ATE384024T1 AT E384024 T1 ATE384024 T1 AT E384024T1 AT 01951392 T AT01951392 T AT 01951392T AT 01951392 T AT01951392 T AT 01951392T AT E384024 T1 ATE384024 T1 AT E384024T1
Authority
AT
Austria
Prior art keywords
substrate
functional unit
microstructure
electrically conductive
secures
Prior art date
Application number
AT01951392T
Other languages
English (en)
Inventor
Andreas Bertz
Thomas Gessner
Matthias Kuechler
Roman Knoefler
Original Assignee
Memsfab Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memsfab Gmbh filed Critical Memsfab Gmbh
Application granted granted Critical
Publication of ATE384024T1 publication Critical patent/ATE384024T1/de

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/03Static structures
    • B81B2203/0323Grooves
    • B81B2203/033Trenches
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/016Passivation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Materials For Medical Uses (AREA)
AT01951392T 2000-06-13 2001-06-13 Mikrostruktur und verfahren zu deren herstellung ATE384024T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10029012A DE10029012C2 (de) 2000-06-13 2000-06-13 Mikrostruktur und Verfahren zu deren Herstellung

Publications (1)

Publication Number Publication Date
ATE384024T1 true ATE384024T1 (de) 2008-02-15

Family

ID=7645520

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01951392T ATE384024T1 (de) 2000-06-13 2001-06-13 Mikrostruktur und verfahren zu deren herstellung

Country Status (8)

Country Link
US (1) US6969628B2 (de)
EP (1) EP1289876B1 (de)
JP (1) JP4852220B2 (de)
CN (1) CN1198756C (de)
AT (1) ATE384024T1 (de)
AU (1) AU2001272342A1 (de)
DE (2) DE10029012C2 (de)
WO (1) WO2001096232A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10242661A1 (de) * 2002-09-13 2004-03-25 Conti Temic Microelectronic Gmbh Verfahren zum Herstellen von Isolationsstrukturen
DE10257098B4 (de) * 2002-12-05 2005-05-25 X-Fab Semiconductor Foundries Ag Verfahren zum Erzeugen hermetisch dicht geschlossener dielektrisch isolierender Trenngräben
DE102009030224A1 (de) 2008-10-29 2010-05-06 Fink, Rainer H.A., Prof.-Dr. Vorrichtung mit einem Emitter-Kontakt, einem Kollektor-Kontakt und einem Spalt und Verfahren zu ihrer Herstellung
KR20100077859A (ko) * 2008-12-29 2010-07-08 주식회사 동부하이텍 경화 폴리머 레지듀 제거 방법
US8610211B2 (en) 2010-07-23 2013-12-17 International Business Machines Corporation Semiconductor-on-insulator (SOI) structure with selectively placed sub-insulator layer void(s) and method of forming the SOI structure
US10106398B2 (en) 2015-05-28 2018-10-23 Infineon Technologies Ag Micromechanical structure comprising carbon material and method for fabricating the same
US11496820B2 (en) * 2016-12-29 2022-11-08 Gmems Tech Shenzhen Limited MEMS device with quadrilateral trench and insert

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4186439A (en) * 1977-12-29 1980-01-29 Casio Computer Co., Ltd. Electronic cash register for totalizing sales data on a time zone basis
JPS59143946A (ja) * 1983-02-07 1984-08-17 Richo Seiki Kk ガス検出装置
CA1216330A (en) 1983-02-07 1987-01-06 Junji Manaka Low power gas detector
DE4000496A1 (de) * 1989-08-17 1991-02-21 Bosch Gmbh Robert Verfahren zur strukturierung eines halbleiterkoerpers
US5129983A (en) * 1991-02-25 1992-07-14 The Charles Stark Draper Laboratory, Inc. Method of fabrication of large area micromechanical devices
DE69333551T2 (de) * 1993-02-04 2005-06-23 Cornell Research Foundation, Inc. Einzelmaskenprozess zum Herstellen von Mikrostrukturen, Einkristallherstellungsverfahren
US6199874B1 (en) * 1993-05-26 2001-03-13 Cornell Research Foundation Inc. Microelectromechanical accelerometer for automotive applications
DE69418615T2 (de) 1993-10-08 1999-09-16 Microchip (Proprietary) Ltd., Pretoria Katalytischer gassensor
JP3305516B2 (ja) * 1994-10-31 2002-07-22 株式会社東海理化電機製作所 静電容量式加速度センサ及びその製造方法
US5736430A (en) * 1995-06-07 1998-04-07 Ssi Technologies, Inc. Transducer having a silicon diaphragm and method for forming same
SG68630A1 (en) * 1996-10-18 1999-11-16 Eg & G Int Isolation process for surface micromachined sensors and actuators
JPH10135488A (ja) * 1996-10-29 1998-05-22 Murata Mfg Co Ltd 半導体加工部品の製造方法
JPH10284771A (ja) * 1997-04-07 1998-10-23 Nissan Motor Co Ltd 微小装置の製造方法および微小装置
US6201629B1 (en) * 1997-08-27 2001-03-13 Microoptical Corporation Torsional micro-mechanical mirror system
EP1062684B1 (de) * 1998-01-15 2010-06-09 Cornell Research Foundation, Inc. Grabenisolation für mikromechanische bauelemente
NO992688L (no) * 1998-06-26 1999-12-27 Motorola Inc Sensor struktur og framgangsmåte for sammenkobling av isolerte strukturer
US6704431B1 (en) * 1998-09-04 2004-03-09 Nippon Telegraph And Telephone Corporation Method and apparatus for digital watermarking

Also Published As

Publication number Publication date
DE10029012C2 (de) 2002-06-06
WO2001096232A1 (de) 2001-12-20
EP1289876A1 (de) 2003-03-12
EP1289876B1 (de) 2008-01-16
DE10029012A1 (de) 2002-01-17
CN1198756C (zh) 2005-04-27
AU2001272342A1 (en) 2001-12-24
US6969628B2 (en) 2005-11-29
DE50113508D1 (de) 2008-03-06
CN1436150A (zh) 2003-08-13
JP2004503391A (ja) 2004-02-05
US20030176007A1 (en) 2003-09-18
JP4852220B2 (ja) 2012-01-11

Similar Documents

Publication Publication Date Title
DE602005007592D1 (de) Verfahren zur herstellung verspannter silizium-auf-isolator-strukturen und dadurch gebildete verspannte silizium-auf-isolator-strukturen
WO2004001798A3 (en) A silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
EP1248294A3 (de) Herstellungsverfahren für ein Halbleitersubstrat und ein Halbleiterbauelement
CA2501580A1 (en) Method of forming strained silicon on insulator (ssoi) and structures formed thereby
AU2002245175A1 (en) Back illuminated imager with enhanced uv to near ir sensitivity
KR920001685A (ko) 반도체장치 및 그의 제조방법
WO2004033365A3 (en) Method of forming a sensor for detecting motion
EP1213259A3 (de) Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit einem Schritt von Belichtung von Silizium-Einkristall
ATE384024T1 (de) Mikrostruktur und verfahren zu deren herstellung
EP1339101A3 (de) Systeme und Verfahren zur Integration von heterogenen Schaltkreis-Bauelementen
WO2002041351A3 (en) Method of fabricating capillary discharge plasma display panel using combination of laser and wet etchings
EP1349216A3 (de) Verfahren zur Herstellung einer elektro-optischen Vorrichtung, elektro-optische Vorrichtung, Verfarhren zur Herstellung einer Halbleitervorrichtung, Halbleitervorrichtung, Projektionsanzeigevorrichtung und elektronisches Gerät
WO2004095522A3 (en) Deep n wells in triple well structures and method for fabricating same
KR960042931A (ko) Soi 구조를 갖는 반도체장치의 제조방법
AU2003299368A1 (en) Method of the production of cavities in a silicon sheet
EP1213260A3 (de) Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit einem angebrachtem Muster
TW200701339A (en) Method of fabricating a silicon-on-insulator structure
WO2003103041A3 (en) Semiconductor device and method of manufacturing same
KR960015855A (ko) 에스오아이(soi)구조와 그 제조방법
EP0948057A4 (de)
KR960035974A (ko) 트랜지스터 몸체와 도체사이의 내부연결 형성 방법
WO2002059939A3 (en) Method for fabricating a semiconductor device
SE0102476D0 (sv) Bonding method and product
KR970017986A (ko) 선택적 soi구조를 갖는 웨이퍼의 제작 방법
WO2009074368A3 (de) Herstellungsverfahren für ein mikromechanisches bauelement und mikromechanisches bauelement